1 C3D1P7060Q silicon carbide schottky diode z -r ec ? r ectifier features ? 600-volt schottky rectifer ? optimized for pfc boost diode application ? zero reverse recovery current ? high-frequency operation ? temperature-independent switching behavior ? extremely fast switching ? positive temperature coeffcient on v f benefts ? small compact surface mount package ? essentially no switching losses ? higher effciency ? reduction of heat sink requirements ? parallel devices without thermal runaway applications ? switch mode power supplies ? led lighting package powerqfn 3.3x3.3 d a t a s h e e t : c 3 d 1 p 7 6 0 q r e v . - maximum ratings symbol parameter value unit test conditions note v rrm repetitive peak reverse voltage 600 v v rsm surge peak reverse voltage 600 v v dc dc blocking voltage 600 v i f continuous forward current 1.7 3 a a t c <150?c, no ac component t c <135?c, no ac component see fig 3 i frm repetitive peak forward surge current 7 4.4 a t c =25?c, t p =10 ms, half sine pulse t c =110?c, t p =10 ms, half sine pulse i fsm non-repetitive peak forward surge current 15 12 a t c =25?c, t p =10 ms, half sine pulse t c =110?c, t p =10 ms, half sine pulse p tot power dissipation 39 17 w t c =25?c t c =110?c t j , t stg operating junction and storage temperature -55 to +175 ?c t c maximum case temperature 150 ?c part number package marking C3D1P7060Q qfn 3.3 c3d1p7060 v rrm = 600 v i f; t c <150?c = 1.7 a q c = 5.6 nc subject to change without notice. www.cree.com
2 electrical characteristics symbol parameter typ. max. unit test conditions note v f forward voltage 1.5 1.8 1.7 2.4 v i f = 1.7 a t j =25c i f = 1.7 a t j =175c i r reverse current 10 20 50 100 a v r = 600 v t j =25c v r = 600 v t j =175c q c total capacitive charge 5.6 nc v r = 600 v, i f = 1.7a d i /d t = 500 a/ s t j = 25c c total capacitance 100 7 6 pf v r = 0 v, t j = 25c, f = 1 mhz v r = 200 v, t j = 25?c, f = 1 mhz v r = 400 v, t j = 25?c, f = 1 mhz note: 1. this is a majority carrier diode, so there is no reverse recovery charge. thermal characteristics symbol parameter typ. unit r jc package thermal resistance from junction to case 3.8 c/w typical performance v f (v) i f (a) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 figure 1. forward characteristics figure 2. reverse characteristics 0.00 1.00 2.00 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 0 200 400 600 800 1000 1200 v r (v) i r (a) t j =-55c t j = 25c t j = 75c t j =125c t j =150c C3D1P7060Q rev. -
3 0 2 4 6 8 10 12 14 16 18 25 50 75 100 125 150 175 figure 3. current derating typical performance 20% duty* 30% duty* 50% duty* 70% duty* dc 0 1 2 3 4 5 6 7 8 9 0 100 200 300 400 500 600 0 20 40 60 80 100 120 0.1 1 10 100 1000 figure 5. recovery charge vs. reverse voltage figure 6. capacitance vs. reverse voltage 0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0 25 50 75 100 125 150 175 qrr (nc) v r (v) c (pf) v r (v) figure 4. power derating p tot (w) t c ?c i f (a) t c ?c C3D1P7060Q rev. -
4 0.01 0.1 1 10 1e - 6 10e - 6 100e - 6 1e - 3 10e - 3 100e - 3 typical performance figure 7. transient thermal impedance thermal resistance (?c/w) t (sec) v t r t diode model csd10060 vf t = v t + if*r t v t= 0.92 + (t j * - 1.35*10 - 3 ) r t= 0.052 + (t j * 0.29*10 - 3 ) note: t j = diode junction temperature in degrees celcius vf t = v t +if*r t v t = 0.99+(t j * -1.5*10 -3 ) r t = 0.22+(t j * 2.6*10 -3 ) diode model C3D1P7060Q rev. -
5 package dimensions package qfn 3.3 all dimensions are in mm tolerances are 0.05 mm if not specifed nc = no connect C3D1P7060Q rev. -
6 6 recommended landing pattern (all dimensions are in mm) note: the design of the land pattern and the size of the thermal pad depend mainly on the thermal characteristic and power dissipation. in general, the size of the thermal pad should be as close to the exposed pad of the package as possible, provided that there is no bridging between the thermal pad and the lead pads. the 0.050mm extra length and width provides space to accommodate the placement tolerance of the component during pick and place process. the 0.150mm along the perimeter present areas for solder to form fllet along the side metal edges of the package. the levels of environmentally sensitive, persistent biologically toxic (pbt), persistent organic pollutants (pop), or otherwise restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with eu directive 2002/95/ec on the restriction of the use of certain hazardous substances in electrical and electronic equipment (rohs), as amended through april 21, 2006. this product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defbrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffc control systems, or weapons systems. copyright ? 2012 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks and z-rec is a trademark of cree, inc. C3D1P7060Q rev. - cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5451 www.cree.com/power
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