2008. 3. 21 1/5 semiconductor technical data kmb6d0dn30qa dual n-ch trench mosfet revision no : 1 general description this trench mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for portable equipment and dc-dc converter applications. features v dss =30v, i d =6a. drain-source on resistance. r ds(on) =28m (max.) @v gs =10v r ds(on) =42m (max.) @v gs =4.5v super high dense cell design high power and current handing capability maximum rating (ta=25 unless otherwise noted) pin connection (top view) 1 2 3 4 8 7 6 5 s 1 g 1 s 2 g 2 d 1 d 1 d 2 d 2 1 2 3 4 8 7 6 5 note> *surface mounted on fr4 board, t 10sec. b2 g h b1 1 4 5 8 a p d l t flp-8 0.20+0.1/-0.05 t p 1.27 millimeters dim a 4.85 0.2 + _ b1 3.94 0.2 + _ b2 6.02 0.3 + _ d 0.4 0.1 + _ g 0.15+0.1/-0.05 h 1.63 0.2 + _ l 0.65 0.2 + _ characteristic symbol pating unit drain source voltage v dss 30 v gate source voltage v gss 20 v drain current dc i d * 6 a pulsed i dp 30 a drain source diode forward current i s 1.7 a drain power dissipation 25 p d * 2 w maximum junction temperature t j 150 storage temperature range t stg -50~150 thermal resistance, junction to ambient r thja * 62.5 /w kmb 6d0dn 30qa
2008. 3. 21 2/5 kmb6d0dn30qa revision no : 1 electrical characteristics (ta=25 ) unless otherwise noted characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 a, v gs =0v 30 - - v drain cut-off current i dss v ds =24v, v gs =0v - - 1 a gate leakage current i gss v gs = 20v, v ds =0v - - 100 na gate threshold voltage v th v ds =v gs, i d =250 a 1.0 1.7 2.5 v drain-source on resistance r ds(on) * v gs =10v, i d =6a - 24 28 m v gs =4.5v, i d =5a - 35 42 on-state drain current i d(on) * v ds =5v, v gs =10v 20 - - a forward transconductance g fs * v ds =5v, i d =6a - 20 - s dynamic input capacitance c iss v ds =15v, f=1mhz, v gs =0v - 576 - pf ouput capacitance c oss - 111 - reverse transfer capacitance c rss - 75 - total gate charge q g * v ds =15v, v gs =10v, i d =2a - 12.5 - nc gate-source charge q gs * - 2.0 - gate-drain charge q gd * - 2.8 - turn-on delay time t d(on) * v dd =15v, v gs =10v i d =1a, r g =6 - 7.8 - ns turn-on rise time t r * - 11.6 - turn-off delay time t d(off) * - 15.3 - turn-off fall time t f * - 16 - source-drain diode ratings source-drain forward voltage v sdf * i dr =1.7a, v gs =0v - 0.75 1.2 v note> * pulse test : pulse width 300 , duty cycle 2%
2008. 3. 21 3/5 kmb6d0dn30qa revision no : 1 0 0.16 0.12 0.14 0.06 0.08 0.02 0.04 0.1 10 15 05 20 drain current i d (a) drain source on resistance r ds(on) ( ? ) v gs =4.5 v gs =10.0 common source ta= 25 pulse test c fig2. r ds(on) - i d gate - source voltage v gs (v) fig1. i d - v ds drain - source voltage v ds (v) 0 0 0.5 4 8 2 6 10 1.0 1.5 2.0 2.5 3.0 5 15 0 10 25 20 2.0 3.0 0 6.0 1.0 5.0 4.0 fig3. i d - v gs fig6. i s - v sdf drain current i d (a) drain current i d (a) fig4. r ds(on) - t j -75 -50 -25 25 50 75 150 125 100 0 reverse drain current i dr (a) 1 10 40 0.8 1.4 1.2 0.6 1.0 0.4 source - drain voltage v sdf (v) normalized threshold voltage v th fig5. v th - t j -75 -50 -25 0.6 0.8 0.4 1.6 1.0 1.4 1.2 0.6 0 0.8 1.4 1.0 1.6 1.2 050100 25 150 125 75 normalized on resistance r ds(on) junction temperature tj ( ) c junction temperature tj ( ) c v gs =2.5v v gs =10, 9, 8, 7, 6, 5, 4v v gs =1.5v v ds = v gs i d = 250 a v gs = 10v i d = 6a 25 c -55 c 125 c
2008. 3. 21 4/5 kmb6d0dn30qa revision no : 1 square wave pulse duration (sec) 10 1 10 2 10 3 10 -3 10 -2 10 -1 1 10 -4 fig10. transient thermal response curve 10 -1 10 -2 10 -3 1 normalized effective transient thermal resistance drain current i d (a) drain - source voltage v ds (v) fig9. safe operation area 10 1 10 1 10 2 10 -1 10 -2 10 -1 10 0 10 0 10 2 v gs = 10v single pulse r ja = 62.5 c/w operation in this area is limited by r ds(on) 1ms 10ms 10s 100ms 1s dc t 1 t 2 p dm r ja = 62.5 c/w single pluse 0.02 0.1 0.01 0.2 0.5 0.05 100 s drain - source voltage v ds (v) capacitance (pf) fig7. c - v ds 25 10 15 05 20 30 0 200 1200 1000 600 800 400 c oss c iss c rss gate - charge q g (nc) 0 10 6 2 4 8 12 9 36 015 fig8. q g - v gs gate - source voltage v gs (v) v ds = 15 v i d = 2 a
2008. 3. 21 5/5 kmb6d0dn30qa revision no : 1 fig11. gate charge v gs 10 v q g q gd q gs q v ds v gs t r t d(on) 10% 90% t on t f t d(off) t off i d i d fig12. resistive load switching v ds v gs v ds v gs 1.0 ma schottky diode 10 v 6 ? r l 0.5 v dss 0.5 v dss
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