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inchange semiconductor isc product specification isc website www.iscsemi.cn isc silicon npn power transistor BU908 description collector-emitter sustaining voltage- : v ceo(sus) = 700v (min) high power dissipation- : p d = 125w@t c = 25 applications designed for use in color tv hor izontal deflection circuits. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector- base voltage 1500 v v ceo collector-emitter voltage 700 v v ebo emitter-base voltage 7 v i c collector current- continuous 8 a p c collector power dissipation @ t c =25 125 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.0 /w
inchange semiconductor isc product specification isc website www.iscsemi.cn 2 isc silicon npn power transistor BU908 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 100ma; i b = 0 700 v v (br)ebo emitter-base breakdown voltage i e = 10ma; i c = 0 7 v v ce (sat) collector-emitter saturation voltage i c = 3.2a; i b = 0.8a 2.0 v v be (sat) base-emitter saturation voltage i c = 3.2a; i b = 0.8a 1.3 v i ces collector cutoff current v ce = 1500v; v be = 0 v ce = 1500v; v be = 0; t c =125 0.1 2.0 ma i ebo emitter cutoff current v eb = 5.0v; i c = 0 0.1 ma h fe dc current gain i c = 1.5a; v ce = 5v 8 f t current-gain?bandwidth product i c = 0.1a; v ce = 10v 7 mhz |
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