? semiconductor components industries, llc, 2009 october, 2009 ? rev. 2 1 publication order number: ntb5411n/d ntb5411n, ntp5411n power mosfet 80 amps, 60 volts n-channel d 2 pak, to-220 features ? low r ds(on) ? high current capability ? avalanche energy specified ? these are pb ? free devices applications ? led lighting and led backlight drivers ? dc ? dc converters ? dc motor drivers ? power supplies secondary side synchronous rectification maximum ratings (t j = 25 c unless otherwise specified) parameter symbol value unit drain ? to ? source voltage v dss 60 v gate ? to ? source voltage ? continuous v gs 20 v gate ? to ? source voltage ? nonrepetitive (t p < 10 s) v gs 30 v continuous drain current r jc (note 1) steady state t c = 25 c i d 80 a t c = 100 c 61 power dissipation r jc (note 1) steady state t c = 25 c p d 166 w pulsed drain current t p = 10 s i dm 185 a operating and storage temperature range t j , t stg ? 55 to 175 c source current (body diode) i s 75 a single pulse drain ? to ? source avalanche energy ? starting t j = 25 c (v dd = 50 v dc , v gs = 10 v dc , i l(pk) = 75 a, l = 0.1 mh, r g = 25 ) e as 280 mj lead temperature for soldering purposes, 1/8 from case for 10 seconds t l 260 c thermal resistance ratings parameter symbol max unit junction ? to ? case (drain) steady state (note 1) r jc 0.9 c/w r ja 43 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. surface mounted on fr4 board using 1 sq in pad size, (cu area 1.127 sq in [1 oz] including traces). http://onsemi.com marking diagram & pin assignment g = pb ? free device a = assembly location y = year ww = work week 1 2 3 4 d 2 pak case 418b style 2 see detailed ordering and shipping information in the package dimensions section on p age 5 of this data sheet. ordering information v (br)dss r ds(on) max i d max (note 1) 60 v 10 m @ 10 v 80 a n ? channel d s g to ? 220ab case 221a style 5 1 2 3 4 ntp 5411ng ayww 1 gate 3 source 4 drain 2 drain 1 gate 3 source 4 drain 2 drain ntb 5411ng ayww
ntb5411n, ntp5411n http://onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise specified) characteristics symbol test condition min typ max unit off characteristics drain ? to ? source breakdown voltage v (br)dss v ds = 0 v, i d = 250 a 60 v drain ? to ? source breakdown voltage temper- ature coefficient v (br)dss /t j 54.2 mv/ c zero gate voltage drain current i dss v gs = 0 v v ds = 60 v t j = 25 c 10 a t j = 150 c 100 gate ? body leakage current i gss v ds = 0 v, v gs = 20 v 100 na on characteristics (note 2) gate threshold voltage v gs(th) v gs = v ds , i d = 250 a 2.0 3.2 4.0 v negative threshold temperature coefficient v gs(th) /t j 6.6 mv/ c drain ? to ? source on voltage v ds(on) v gs = 10 v, i d = 80 a 0.71 0.92 v v gs = 10 v, i d = 40 a, 150 c 0.65 static drain ? to ? source on ? resistance r ds(on) v gs = 10 v, i d = 40 a 8.4 10 m forward transconductance g fs v gs = 15 v, i d = 40 a 70 s charges, capacitances & gate resistance input capacitance c iss v ds = 25 v, v gs = 0 v, f = 1 mhz 3365 4500 pf output capacitance c oss 615 transfer capacitance c rss 230 total gate charge q g(tot) v gs = 10 v, v ds = 48 v, i d = 80 a 92 130 nc threshold gate charge q g(th) 4.1 gate ? to ? source charge q gs 19 gate ? to ? drain charge q gd 43 switching characteristics, v gs = 10 v (note 3) turn ? on delay time t d(on) v gs = 10 v, v dd = 48 v, i d = 80 a, r g = 9.1 22 ns rise time t r 122 turn ? off delay time t d(off) 116 fall time t f 113 drain ? source diode characteristics forward diode voltage v sd v gs = 0 v i s = 37.5 a t j = 25 c 0.91 1.1 v dc t j = 150 c 0.8 reverse recovery time t rr i s = 37.5 a dc , v gs = 0 v dc , di s /dt = 100 a/ s 62 ns charge time t a 43 discharge time t b 19 reverse recovery stored charge q rr 0.15 c 2. pulse test: pulse width = 300 s, duty cycle = 2%. 3. switching characteristics are independent of operating junction temperatures.
ntb5411n, ntp5411n http://onsemi.com 3 typical performance curves 0 20 40 60 80 100 120 140 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 v ds , drain ? to ? source voltage (v) i d , drain current (a) figure 1. on ? region characteristics v gs = 4.5 v 5.5 v 6 v 6.5 v 10 v 7 v t j = 25 c 0 20 40 60 80 100 120 140 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 v gs , gate ? to ? source voltage (v) figure 2. transfer characteristics i d , drain current (a) t j = 25 c t j = ? 55 c t j = 125 c v ds 10 v 8 9 10 11 12 13 14 15 5678910 v gs , gate ? to ? source voltage (v) r ds(on) , drain ? to ? source resistance (m ) figure 3. on ? resistance vs. gate ? to ? source voltage i d = 40 a t j = 25 c 5 6 7 8 9 10 11 12 10 30 50 70 90 110 130 150 i d , drain current (a) r ds(on) , drain ? to ? source resistance (m ) figure 4. on ? resistance vs. drain current and gate voltage t j = 25 c v gs = 10 v 0.6 0.8 1 1.2 1.4 1.6 1.8 2 ? 50 ? 25 0 25 50 75 100 125 150 175 t j , junction temperature ( c) r ds(on) , drain ? to ? source resistance (normalized) figure 5. on ? resistance variation with temperature i d = 40 a v gs = 10 v 10 100 1000 5 1015202530354045505560 v ds , drain ? to ? source voltage (volts) i dss , leakage (na) figure 6. drain ? to ? source leakage current vs. voltage v gs = 0 v t j = 150 c t j = 125 c 2.2 2.4
ntb5411n, ntp5411n http://onsemi.com 4 typical performance curves 0 1000 2000 3000 4000 5000 6000 7000 0 102030405060 v ds , drain ? to ? source voltage (v) figure 7. capacitance variation c, capacitance (pf) v gs = 0 v c rss c oss c iss t j = 25 c 1 10 100 1000 1 10 100 0 1 2 3 4 5 6 7 8 9 10 0 102030405060708090 q g , total gate charge (nc) v gs , gate ? to ? source voltage (v) figure 8. gate ? to ? source voltage vs. total charge v ds = 48 v i d = 80 a t j = 25 c q t q 2 q 1 t, time (ns) r g , gate resistance ( ) figure 9. resistive switching time variation vs. gate resistance t r t f t d(off) t d(on) 0 10 20 30 40 50 60 70 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 v sd , source ? to ? drain voltage (v) i s , source current (a) figure 10. diode forward voltage vs. current v gs = 0 v t j = 25 c v ds , drain ? to ? source voltage (v) i d , drain current (a) figure 11. maximum rated forward biased safe operating area 0 50 100 150 200 250 300 25 50 75 100 125 150 175 t j , starting junction temperature ( c) avalanche energy (mj) figure 12. maximum avalanche energy vs. starting junction temperature i d = 75 a v dd = 48 v i d = 80 a v gs = 10 v 0.1 10 100 1000 0.1 10 100 10 s 100 s 1 ms 10 ms dc r ds(on) limit thermal limit package limit 1 1 0 v v gs 10 v single pulse t c = 25 c
ntb5411n, ntp5411n http://onsemi.com 5 typical performance curves 0.001 0.01 0.1 1 10 100 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t, pulse time (s) figure 13. thermal response r(t), ( c/w) d = 0.5 0.2 0.1 0.05 0.02 0.01 surface ? mounted on fr4 board using 1 sq in pad size, 1 oz cu ordering information device package shipping ? ntp5411ng to ? 220ab (pb ? free) 50 units / rail NTB5411NT4G d 2 pak (pb ? free) 800 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
ntb5411n, ntp5411n http://onsemi.com 6 package dimensions style 2: pin 1. gate 2. drain 3. source 4. drain seating plane s g d ? t ? m 0.13 (0.005) t 23 1 4 3 pl k j h v e c a dim min max min max millimeters inches a 0.340 0.380 8.64 9.65 b 0.380 0.405 9.65 10.29 c 0.160 0.190 4.06 4.83 d 0.020 0.035 0.51 0.89 e 0.045 0.055 1.14 1.40 g 0.100 bsc 2.54 bsc h 0.080 0.110 2.03 2.79 j 0.018 0.025 0.46 0.64 k 0.090 0.110 2.29 2.79 s 0.575 0.625 14.60 15.88 v 0.045 0.055 1.14 1.40 ? b ? m b w w notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 418b ? 01 thru 418b ? 03 obsolete, new standard 418b ? 04. f 0.310 0.350 7.87 8.89 l 0.052 0.072 1.32 1.83 m 0.280 0.320 7.11 8.13 n 0.197 ref 5.00 ref p 0.079 ref 2.00 ref r 0.039 ref 0.99 ref m l f m l f m l f variable configuration zone r n p u view w ? w view w ? w view w ? w 123 d 2 pak 3 case 418b ? 04 issue k *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 8.38 5.080 dimensions: millimeters pitch 2x 16.155 1.016 2x 10.49 3.504
ntb5411n, ntp5411n http://onsemi.com 7 package dimensions to ? 220 case 221a ? 09 issue af style 5: pin 1. gate 2. drain 3. source 4. drain notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.161 3.61 4.09 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.014 0.025 0.36 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane ? t ? c s t u r j on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 ntb5411n/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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