inchange semiconductor isc product specification isc silicon npn power transistor 2SC2168 description collector-emitter breakdown voltage- : v (br)ceo = 200v(min) dc current gain- : h fe = 60(min)@ (v ce = 10v, i c = 0.7a) applications designed for tv vertical output ,audio output driver and general purpose applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 200 v v ceo collector-emitter voltage 200 v v ebo emitter-base voltage 6 v i c collector current-continuous 2 a i b base current-continuous 1 a p c collector power dissipation @t c =25 30 w t j junction temperature 150 t stg storage temperature -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC2168 electrical characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 25ma; i b = 0 200 v v ce (sat) collector-emitter saturation voltage i c = 0.7a; i b = 0.07a 1.0 v i cbo collector cutoff current v cb = 200v; i e = 0 10 a i ebo emitter cutoff current v eb = 6v; i c = 0 10 a h fe dc current gain i c = 0.7a; v ce = 10v 60 c ob output capacitance i e = 0; v cb = 10v; f= 1mhz 35 pf f t current-gain?bandwidth product i e = -0.2a ; v ce = 12v 15 mhz switching times t on turn-on time 1.0 s t stg storage time 3.0 s t f fall time i c = 1a; i b1 = -i b2 = 0.1a; v cc = 20v; r l = 20 1.5 s isc website www.iscsemi.cn 2
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