FDD86102 n-channel powertrench ? mosfet ?2012 fairchild semiconductor corporation FDD86102 rev.c5 www.fairchildsemi.com 1 march 2012 FDD86102 n-channel powertrench ? mosfet 100 v, 36 a, 24 m features ? max r ds(on) = 24 m at v gs = 10 v, i d = 8 a ? max r ds(on) = 38 m at v gs = 6 v, i d = 6 a ? high performance trench technology for extremely low r ds(on) ? high power and current handling capability in a widely used surface mount package ? very low qg and qgd compared to competing trench technologies ? fast switching speed ? 100% uil tested ? rohs compliant general description this n-channel mosfet is produced using fairchild semiconductor?s advanced power trench ? process that has been optimized for r ds(on) , switching performance and ruggedness. application ? dc - dc conversion mosfet maximum ratings t c = 25 c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 100 v v gs gate to source voltage 20 v i d drain current -continuous t c = 25 c 36 a -continuous t a = 25 c (note 1a) 8 -pulsed 40 e as single pulse avalanche energy (note 3) 121 mj p d power dissipation t c = 25 c 62 w power dissipation t a = 25 c (note 1a) 3.1 t j , t stg operating and storage junction temperature range -55 to +150 c r jc thermal resistance, junction to case 2.0 c/w r ja thermal resistance, junction to ambient (note 1a) 40 device marking device package reel size tape width quantity FDD86102 FDD86102 d-pak(to-252) 13 ?? 12 mm 2500 units g s d to-252 d-pak (to-252) d g s
FDD86102 n-channel powertrench ? mosfet FDD86102 rev.c5 www.fairchildsemi.com 2 electrical characteristics t j = 25 c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain to source breakdown voltage i d = 250 p a, v gs = 0 v 100 v ' bv dss ' t j breakdown voltage temperature coefficient i d = 250 p a, referenced to 25 c 67 mv/ c i dss zero gate voltage drain current v ds = 80 v, v gs = 0 v 1 p a i gss gate to source leakage current v gs = 20 v, v ds = 0 v 100 na on characteristics v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 p a 2 3.1 4 v ' v gs(th) ' t j gate to source threshold voltage temperature coefficient i d = 250 p a, referenced to 25 c -8.5 mv/ c r ds(on) static drain to source on resistance v gs = 10 v, i d = 8 a 19 24 m : v gs = 6 v, i d = 6 a 26 38 v gs = 10 v, i d = 8 a, t j = 125 c 33 44 g fs forward transconductance v ds = 10 v, i d = 8 a 21 s (note 2) dynamic characteristics c iss input capacitance v ds = 50 v, v gs = 0 v, f = 1 mhz 780 1035 pf c oss output capacitance 180 240 pf c rss reverse transfer capacitance 15 25 pf r g gate resistance 0.4 : switching characteristics t d(on) turn-on delay time v dd = 50 v, i d = 8 a, v gs = 10 v, r gen = 6 : 7.6 15 ns t r rise time 3 10 ns t d(off) turn-off delay time 13.4 24 ns t f fall time 2.9 10 ns q g total gate charge v gs = 0 v to 10 v v dd = 50 v, i d = 8 a 13.4 19 nc q g total gate charge v gs = 0 v to 5 v 7.6 11 nc q gs gate to source gate charge 4.0 nc q gd gate to drain ?miller? charge 3.7 nc drain-source diod e characteristics v sd source to drain diode forward voltage v gs = 0 v, i s = 8 a (note 2) 0.8 1.3 v v gs = 0 v, i s = 2.6 a (note 2) 0.7 1.2 t rr reverse recovery time i f = 8 a, di/dt = 100 a/ p s 43 68 ns q rr reverse recovery charge 43 68 nc notes : 1. r t ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the s older mounting surface of the drain pins. r t jc
FDD86102 n-channel powertrench ? mosfet FDD86102 rev.c5 www.fairchildsemi.com 3 typical characteristics t j = 25 c unless otherwise noted figure 1. 012345 0 10 20 30 40 v gs = 6 v v gs = 10 v v gs = 5 v v gs = 4.5 v pulse duration = 80 p s duty cycle = 0.5% max v gs = 8 v i d , drain current (a) v ds , drain to source voltage (v) on-region characteristics figure 2. 0 10203040 0 1 2 3 4 5 6 v gs = 4.5 v v gs = 8 v normalized drain to source on-resistance i d , drain current (a) v gs = 10 v v gs = 6 v v gs = 5 v pulse duration = 80 p s duty cycle = 0.5% max n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n - r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 i d = 8 a v gs = 10 v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 4681 0 10 20 30 40 50 60 70 80 t j = 125 o c i d = 8 a t j = 25 o c v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m : ) pulse duration = 80 p s duty cycle = 0.5% max o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 234567 0 10 20 30 40 t j = 150 o c v ds = 5 v pulse duration = 80 p s duty cycle = 0.5% max t j = -55 o c t j = 25 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 50 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0 v i s , reverse drain current (a) v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
FDD86102 n-channel powertrench ? mosfet FDD86102 rev.c5 www.fairchildsemi.com 4 figure 7. 03691215 0 2 4 6 8 10 i d = 8 a v dd = 50 v v dd = 25 v v gs , gate to source voltage (v) q g , gate charge (nc) v dd = 75 v gate charge characteristics figure 8. 0.1 1 10 100 10 100 1000 f = 1 mhz v gs = 0 v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.001 0.01 0.1 1 10 30 1 10 50 t j = 100 o c t j = 25 o c t j = 125 o c t av , time in avalanche (ms) i as , avalanche current (a) u n c l a m p e d i n d u c t i v e switching capability figure 10. 25 50 75 100 125 150 0 10 20 30 40 r t jc = 2 o c/w v gs = 6 v v gs = 10 v i d , drain current (a) t c , case temperature ( o c ) m a x i m u m c o n t i n u o u s d r a i n current vs case temperature f i g u r e 1 1 . f o r w a r d b i a s s a f e op erating area 0.1 1 10 100 300 0.1 1 10 100 dc 10 ms 1 ms 100 us i d , drain current (a) v ds , drain to source voltage (v) this area is limited by r ds(on) single pulse t j = max rated r t jc = 2 o c/w t c = 25 o c figure 12. 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 50 100 1000 10000 p ( pk ) , peak transient power (w) t, pulse width (sec) single pulse r t jc = 2 o c/w t c = 25 o c s i n g l e p u l s e m a x i m u m power dissipation typical characteristics t j = 25 c unless otherwise noted
FDD86102 n-channel powertrench ? mosfet FDD86102 rev.c5 www.fairchildsemi.com 5 figure 13. junction-to-case transient thermal response curve 10 -5 10 -4 10 -3 10 -2 10 -1 1 0.01 0.1 1 single pulse r t jc = 2 o c/w duty cycle-descending order normalized thermal impedance, z t jc t, rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 2 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t jc x r t jc + t c typical characteristics t j = 25 c unless otherwise noted
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