VS-8CWH02FNHM3 www.vishay.com vishay semiconductors revision: 02-aug-12 1 document number: 94741 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 hyperfast rectifier, 2 x 4 a fred pt ? features ? hyperfast recovery time ? 175 c max. operatin g junction temperature ? output rectification freewheeling ? low forward voltage drop reduced q rr and soft recovery ? low leakage current ? aec-q101 qualified ? meets jesd 201 class 1a whisker test ? meets msl level 1, per j-st d-020, lf maximum peak of 260 c ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 description/applications state of the art hyperfast recove ry rectifiers designed with optimized performance of forw ard voltage drop, hyperfast recovery time, and soft recovery. ? the planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. ? these devices are intended for use in pfc boost stage in the ac/dc section of smps inverter s or as freewheeling diodes. their extremely optimized stored charge and low recovery current minimize the swit ching losses and reduce over dissipation in the switching element and snubbers. product summary package d-pak (to-252aa) i f(av) 2 x 4 a v r 200 v v f at i f 0.95 v t rr (typ.) 23 ns t j max. 175 c diode variation common cathode ba s e common cathode common cathode anode anode 2 1 2 3 d-pak (to-252aa) absolute maximum ratings parameter symbol test conditions values units peak repetitive reverse voltage v rrm 200 v average rectified forward current i f(av) t c = 164 c 8 a non-repetitive peak surge current per leg i fsm t j = 25 c 80 operating junction and storage temperatures t j , t stg - 65 to 175 c electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditi ons min. typ. max. units breakdown voltage, ? blocking voltage v br , v r i r = 100 a 200 - - v forward voltage per leg v f i f = 4 a - 0.87 0.95 i f = 8 a - 0.95 1.10 i f = 4 a, t j = 150 c - 0.71 0.80 i f = 8 a, t j = 150 c - 0.8 1.0 reverse leakage current per leg i r v r = v r rated - - 4 a t j = 125 c, v r = v r rated - - 40 t j = 150 c, v r = v r rated - - 80 junction capaci tance per leg c t v r = 200 v - 17 - pf series inductance l s measured lead to lead 5 mm from package body - 8 - nh
VS-8CWH02FNHM3 www.vishay.com vishay semiconductors revision: 02-aug-12 2 document number: 94741 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition s min. typ. max. units reverse recovery time t rr i f = 1 a, di f /dt = 100 a/s, v r = 30 v - 23 27 ns t j = 25 c i f = 4 a ? di f /dt = 200 a/s ? v r = 160 v -20- t j = 125 c - 27 - peak recovery current i rrm t j = 25 c - 2 - a t j = 125 c - 3.4 - reverse recovery charge q rr t j = 25 c - 20 - nc t j = 125 c - 46 - thermal - mechanical specifications parameter symbol test conditio ns min. typ. max. units maximum junction and storage temperature range t j , t stg - 65 - 175 c thermal resistance, ? junction to case per leg r thjc -2.73.2 c/w per device - 1.35 1.6 approximate weight 0.3 g 0.01 oz. marking device case style d-pak 8cwh02fnh
VS-8CWH02FNHM3 www.vishay.com vishay semiconductors revision: 02-aug-12 3 document number: 94741 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - typical forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction ca pacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics forward voltage drop - v f (v) instantaneous forward current - i f (a) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.1 1 10 100 tj = 25c tj = 125c tj = 175c reverse voltage - v r (v) reverse current - i r (a) 50 100 150 200 0.0001 0.001 0.01 0.1 1 10 100 tj = 25c tj = 175c tj = 150c tj = 125c tj = 100c tj = 75c tj = 50c reverse voltage - v r (v) junction capacitance - c t (pf) 0 50 100 150 200 10 100 t 1 , rectangular pulse duration (seconds) thermal impedance z thjc (c/w) 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 0.1 1 10 single pulse (thermal resistance) d = 0.01 d = 0.02 d = 0.05 d = 0.1 d = 0.5 d = 02
VS-8CWH02FNHM3 www.vishay.com vishay semiconductors revision: 02-aug-12 4 document number: 94741 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics fig. 7 - typical reverse recovery time vs. di f /dt fig. 8 - typical stored charge vs. di f /dt note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; ? pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); ? pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = rated v r average forward current - i f (av) (a) allowable case temperature (c) 0 1 2 3 4 5 6 150 155 160 165 170 175 180 dc see note (1) square wave (d=0.50) rated vr applied average power loss ( watts ) average forward current - i f (av) (a) 0123456 0 1 2 3 4 5 d = 0.01 d = 0.02 d = 0.05 d = 0.1 d = 0.2 d = 0.5 rms limit dc trr ( nc ) di f /dt (a/s ) 0 0 0 1 0 0 1 0 5 10 15 20 25 30 35 40 4a, tj = 25c 4a, tj = 125c qrr ( nc ) di f /dt (a/s ) 0 0 0 1 0 0 1 0 10 20 30 40 50 60 70 4a, tj = 25c 4a, tj = 125c
VS-8CWH02FNHM3 www.vishay.com vishay semiconductors revision: 02-aug-12 5 document number: 94741 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - reverse recovery parameter test circuit fig. 10 - reverse recovery waveform and definitions irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve dened by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
VS-8CWH02FNHM3 www.vishay.com vishay semiconductors revision: 02-aug-12 6 document number: 94741 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description VS-8CWH02FNHM3 75 3000 antistatic plastic tube vs-8cwh02fntrhm3 2000 2000 13" diameter reel vs-8cwh02fntrrhm3 3000 3000 13" diameter reel vs-8cwh02fntrlhm3 3000 3000 13" diameter reel links to related documents dimensions www.vishay.com/doc?95519 part marking information www.vishay.com/doc?95518 packaging information www.vishay.com/doc?95033 2 - current rating (8 = 8 a) 4 - package identifier: w = d-pak c = common cathode 5 - h = hyperfast recovery 6 - voltage rating (02 = 200 v) 7 - fn = to-252aa 8 - tr = tape and reel none = tube trl = tape and reel (left oriented) trr = tape and reel (right oriented) 3 - circuit configuration: 1 - vishay semiconductors product device code 5 1 3 2 4 6 7 8 9 vs- 8 c w h 02 fn trl h m3 10 - environmental digit: m3 = halogen-free, rohs-compliant, and terminations lead (pb)-free 10 9 - h = aec-q101 qualified
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