maximum ratings: (t a =25c unless otherwise noted) symbol units peak repetitive reverse voltage v rrm 100 v dc blocking voltage v r 100 v rms reverse voltage v r(rms) 71 v average forward current i o 1.0 a peak forward surge current i fsm 20 a power dissipation p d 1.2 w operating junction temperature range t j -50 to +125 c storage temperature range t stg -50 to +150 c thermal resistance ja 85 c/w electrical characteristics per diode: (t a =25c unless otherwise noted) symbol test conditions min typ max units i r v r =v rrm 0.1 10 a i r v r =v rrm , t a =100c 20 ma bv r i r =150a 100 v v f i f =500ma 650 700 mv v f i f =1.0a 700 750 mv c j v r =4.0v, f=1.0mhz 230 pf CBRHDSH1-100 high density 1.0 amp dual in line schottky bridge rectifier hd dip case central semiconductor corp. tm r2 (16-july 2008) description: the central semiconductor CBRHDSH1-100 is a full wave bridge rectifier in a durable epoxy surface mount molded case, designed for low voltage full wave rectification applications. the molding compound used in this device has ul flammability classification 94v-o. marking code: csh110 features: ? low leakage current (100na typ @ v rrm ) ? low forward voltage drop schottky diodes ? high 1.0a current rating ? pb-free plating ? rohs compliant
central semiconductor corp. tm hd dip case - mechanical outline CBRHDSH1-100 high density 1.0 amp dual in line schottky bridge rectifier r2 (16-july 2008) marking code: csh110
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