CHM6426XPT c h e n m k o e n t e r p r i s e c o . , l t d s u r f a c e m o u n t n-channel enhancement mode field effect transistor v o l t a g e 6 0 v o l t s c u r r e n t 3 ampere a p p l i c a t i o n f e a t u r e * h i g h d e n s i t y c e l l d e s i g n f o r extremely low r ds(on) . construction * n-channel enhancement * s e r v o m o t o r c o n t r o l . * p o w e r m o s f e t g a t e d r i v e r s . * o t h e r s w i t c h i n g a p p l i c a t i o n s . 2008-03 * rugged and reliable. a b s o l u t e m a x i m u m r a t i n g s t a = 2 5 c u n l e s s o t h e r w i s e n o t e d s y m b o l parameter CHM6426XPT units v dss drain-source voltage 60 v v gss gate-source voltage 20 v i d maximum drain current - continuous a - pulsed p d maximum power dissipation 1300 mw t stg storage temperature range -55 to 150 c thermal characteristics r q ja thermal resistance, junction-to-ambient 100 3 c/w (note 3) note : 1. surface mounted on fr4 board , t <=10sec 2. pulse test , pulse width <= 300us , duty cycle <= 2% 12 * small package. (sc-62/sot-89 ) t j operating temperature range -55 to 150 c 3. repetitive rating , pulse width linited by maximum junction temperature (note 1) 4. guaranteed by design , not subject to production trsting 1 2 3 1 gate 2 drain 3 source d i m e n s i o n s i n m i l l i m e t e r s s c - 6 2 / s o t - 8 9 s c - 6 2 / s o t - 8 9 1 . 7 m a x . 4 . 6 m a x . 4 . 6 m a x . 0 . 4 + 0 . 0 5 1 . 6 m a x . 2 . 5 + 0 . 1 0 . 8 m i n . + 0 . 0 8 0 . 4 5 - 0 . 0 5 + 0 . 0 8 0 . 4 0 - 0 . 0 5 1 . 5 0 + 0 . 1 + 0 . 0 8 0 . 4 0 - 0 . 0 5 1 . 5 0 + 0 . 1 c i r c u i t s d g (1) (2) (3)
electrical characteristic ( CHM6426XPT ) e l e c t r i c a l c h a r a c t e r i s t i c s t a = 2 5 c u n l e s s o t h e r w i s e n o t e d s y m b o l p a r a m e t e r c o n d i t i o n s m i n t y p m a x u n i t s o f f c h a r a c t e r i s t i c s 90 o n c h a r a c t e r i s t i c s r ds(on) static drain-source on-resistance m w vgs=10v, id=3a switching characteristics q gs gate-source charge q gd gate-drain charge t on turn-on time ns v dd = 30v i d = 1.0a , v g s = 10 v 26 t r rise time 8 1 b v d s s drain-source breakdown voltage v gs = 0 v, i d = 250 a n a 60 v n a i gssf dss s zero gate voltage drain current i v ds gate-body leakage = gate-body leakage 60 v, v v gs gs = 20v, = 0 v v ds = 0 v a +100 -100 v gs = -20v, v ds = 0 v v gs (th) gate threshold voltage v ds = v gs , i d = 250 a 1 v vgs=4.5v, id=2.4a 66 t f fall time 6 q g total gate charge 2.8 vds=30v, id=3a vgs=10v turn-off time t off rgen= 6 w (note 2) (note 4) 3 nc 13 4 33 3 drain-source diode characteristics and maximum ratings 13.4 i v sd drain-source diode forward current drain-source diode forward voltage i s = 3a , v g s = 0 v 3.0 1.1 a v (note 1) (note 2) 110 75 88 1.7 17.8 i gssr dynamic characteristics input capacitance reverse transfer capacitance output capacitance c iss c oss c rss v ds = 2 5v, v gs = 0v, f = 1.0 mhz 665 75 40 pf
r a t i n g c h a r a c t e r i s t i c c u r v e s ( CHM6426XPT ) t y p i c a l e l e c t r i c a l c h a r a c t e r i s t i c s 0 1.0 2.0 0 5 10 4.0 15 20 v , drain-to-source voltage (v) i , dr a in current (a) ds d figure 1. output characteristics v gs= 10,9,8v v gs= 3.0v 0 i , dr a in current (a) d 0 2 4 vgs , gate-to-source voltage (v) figure 2. transfer characteristics j=25c t j=125c t j=-55c t 1.0 2.0 5.0 6 8 10 0 3 6 9 12 15 0 2 4 6 8 qg , total gate charge (nc) vgs , gate to source voltage (v) figure 3. gate charge id=3a vds=30v 2.2 0.7 -100 1.0 1.6 t , jun ctio n t emperature (c) j 0.4 1.3 1.9 d r a i n - s o u r c e o n - r e s i s t a n c e r , no r m a l i z e d d s ( o n ) figure 4. on-resistance variation with temperature id=3a vgs=10v -50 0 50 100 150 200 temperature 1.3 0.7 -50 -25 0 25 50 75 100 125 150 0.9 1.1 t , jun ctio n t emperature (c) j 0.6 0.8 1.0 1.2 threshold voltage vth , normalized gate-source figure 5. gate threshold variation with id=250ua vds=vgs 6.0 3.0 4.0 v gs= 4.0v 5 .0 3.0
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