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| inchange semiconductor product specification silicon pnp power transistors BDW52C description ? with to-3 package ? complement to type bdw51c ? excellent safe operating area applications ? for use in power linear and switching applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -100 v v ceo collector-emitter voltage open base -100 v v ebo emitter-base voltage open collector -5 v i c collector current -15 a i cm collector current-peak -20 a i b base current -7 a p c collector power dissipation t c =25 ?? 125 w t j junction temperature 200 ?? t stg storage temperature -65~200 ?? thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 1.4 ??/w fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon pnp power transistors BDW52C characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =-0.1a ;i b =0 -100 v v cesat-1 collector-emitter saturation voltage i c =-5a; i b =-0.5a -1.0 v v cesat-2 collector-emitter saturation voltage i c =-10a; i b =-2.5a -3.0 v v besat base-emitter saturation voltage i c =-10a; i b =-2.5a -2.5 v v be base-emitter on voltage i c =-5a ; v ce =-4v -1.5 v i ceo collector cut-off current v ce =-50v; i b =0 -1.0 ma i cbo collector cut-off current v cb =-100v; i e =0 t c =150 ?? -0.5 -5.0 ma i ebo emitter cut-off current v eb =-5v; i c =0 -2.0 ma h fe-1 dc current gain i c =-5a ; v ce =-4v 20 150 h fe-2 dc current gain i c =-10a ; v ce =-4v 5 f t transition frequency i c =-0.5a ; v ce =-4v 3 mhz inchange semiconductor product specification 3 silicon pnp power transistors BDW52C package outline fig.2 outline dimensions (unindicated tolerance: ? 0.1mm) |
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