FDMC7572S n-channel power trench ? syncfet tm ?2011 fairchild semiconductor corporation FDMC7572S rev.c1 www.fairchildsemi.com 1 august 2011 FDMC7572S n-channel power trench ? syncfet tm 25 v, 40 a, 3.15 m features ? max r ds(on) = 3 . 15 m at v gs = 10 v, i d = 2 2.5 a ? max r ds(on) = 4.7 m at v gs = 4.5 v, i d = 18 a ? advanced package and silic on combination for low r ds(on) and high efficiency ? syncfet schottky body diode ? 100% uil tested ? rohs compliant general description the FDMC7572S has been designed to minimize losses in power conversion application. advancements in both silicon and package technologies have been combined to offer the lowest r ds(on) while maintaining excellent switching performance. this device has the added benefit of an efficient monolithic schottky body diode. applications ? synchronous rectifier for dc/dc converters ? notebook vcore/ gpu low side switch ? networking point of load low side switch ? telecom secondary side rectification mosfet maximum ratings t a = 25 c unless otherwise noted thermal characteristics package marking and ordering information symbol paramete r ratings units v ds drain to source voltage 25 v v gs gate to source voltage (note 4) 20 v i d drain current -continuous (package limited) t c = 25 c 40 a -continuous (silicon limited) t c = 25 c 103 -continuous t a = 25 c (note 1a) 22.5 -pulsed 120 e as single pulse avalanche energy (note 3) 84 mj p d power dissipation t c = 25 c 52 w power dissipation t a = 25 c (note 1a) 2.3 t j , t stg operating and storage junction temperature range -55 to +150 c r jc thermal resistance, junction to case 2.4 c/w r ja thermal resistance, junction to ambient (note 1a) 53 device marking device package reel size tape width quantity FDMC7572S FDMC7572S power 33 13 ?? 12 mm 3000 units top power 33 bottom d d d d s s s g pin 1 4 3 2 1 5 6 7 8 s s s g d d d d
FDMC7572S n-channel power trench ? syncfet tm www.fairchildsemi.com 2 FDMC7572S rev.c1 electrical characteristics t j = 25 c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain to source breakdown voltage i d = 1 ma, v gs = 0 v 25 v ' bv dss ' t j breakdown voltage temperature coefficient i d = 10 ma, referenced to 25 c 21 mv/ c i dss zero gate voltage drain current v ds = 20 v, v gs = 0 v 500 p a i gss gate to source leakage current, forward v gs = 20 v, v ds = 0 v 100 na on characteristics v gs(th) gate to source threshold voltage v gs = v ds , i d = 1 ma 1.2 1.7 3.0 v ' v gs(th) ' t j gate to source threshold voltage temperature coefficient i d = 10 ma, referenced to 25 c -5 mv/ c r ds(on) static drain to source on resistance v gs = 10 v, i d = 22.5 a 2.5 3.15 m : v gs = 4.5 v, i d = 18 a 3.6 4.7 v gs = 10 v, i d = 22.5 a, t j = 125 c 3.5 4.5 g fs forward transconductance v ds = 5 v, i d = 22.5 a 122 s dynamic characteristics c iss input capacitance v ds = 1 3 v, v gs = 0 v, f = 1 mhz 2031 2705 pf c oss output capacitance 596 795 pf c rss reverse transfer capacitance 134 205 pf r g gate resistance 1.1 2.4 : switching characteristics t d(on) turn-on delay time v dd = 13 v, i d = 22.5 a, v gs = 10 v, r gen = 6 : 11 22 ns t r rise time 3.6 10 ns t d(off) turn-off delay time 26 41 ns t f fall time 3 10 ns q g total gate charge v gs = 0 v to 10 v v dd = 1 3 v i d = 22.5 a 31 44 nc q g total gate charge v gs = 0 v to 4.5 v 14 20 nc q gs gate to source gate charge 6.5 nc q gd gate to drain ?miller? charge 3.9 nc drain-source diod e characteristics v sd source to drain diode forward voltage v gs = 0 v, i s = 22.5 a (note 2) 0.79 1.2 v v gs = 0 v, i s = 2 a (note 2) 0.47 0.8 t rr reverse recovery time i f = 2 2.5 a, di/dt = 300 a/ p s 24 39 ns q rr reverse recovery charge 19 34 nc notes: 1. r t ja is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r t jc is guaranteed by design while r t ca is determined by the user's board design. 2. pulse test: pulse width < 300 p s, duty cycle < 2.0 %. 3. e as of 84 mj is based on starting t j = 25 c, l = 1 mh, i as = 13 a, v dd = 23 v, v gs = 10 v. 100% test at l = 0.3 mh, i as = 20 a. 4. as an n-ch device, the negative vgs rating is for low duty cycle pulse occurrence only. no continuous rating is implied. 53 c/w when mounted on a 1 in 2 pad of 2 oz copper 125 c/w when mounted on a minimum pad of 2 oz copper
FDMC7572S n-channel power trench ? syncfet tm www.fairchildsemi.com 3 FDMC7572S rev.c1 typical characteristics t j = 25 c unless otherwise noted figure 1. 012345 0 30 60 90 120 v gs = 3.5 v v gs = 4.5 v v gs = 10 v pulse duration = 80 p s duty cycle = 0.5% max v gs = 2.5 v v gs = 3 v i d , drain current (a) v ds , drain to source voltage (v) on-region characteristics figure 2. 0 306090120 0 1 2 3 4 5 6 7 8 v gs = 4.5 v v gs = 2.5 v pulse duration = 80 p s duty cycle = 0.5% max normalized drain to source on-resistance i d , drain current (a) v gs = 3 v v gs = 3.5 v v gs = 10 v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n - r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 i d = 22.5 a v gs = 10 v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 24681 0 0 2 4 6 8 10 12 t j = 125 o c i d = 22.5 a t j = 25 o c v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m : ) pulse duration = 80 p s duty cycle = 0.5% max o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 30 60 90 120 t j = 125 o c v ds = 5 v pulse duration = 80 p s duty cycle = 0.5% max t j = -55 o c t j = 25 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 100 200 t j = -55 o c t j = 25 o c t j = 125 o c v gs = 0 v i s , reverse drain current (a) v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
FDMC7572S n-channel power trench ? syncfet tm www.fairchildsemi.com 4 FDMC7572S rev.c1 figure 7. 0 4 8 121620242832 0 2 4 6 8 10 i d = 22.5 a v dd = 16 v v dd = 10 v v gs , gate to source voltage (v) q g , gate charge (nc) v dd = 13 v gate charge characteristics figure 8. 0.1 1 10 60 100 1000 3000 f = 1 mhz v gs = 0 v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss 30 c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.01 0.1 1 10 100 1 10 30 t j = 100 o c t j = 25 o c t j = 125 o c t av , time in avalanche (ms) i as , avalanche current (a) u n c l a m p e d i n d u c t i v e switching capability f i g u r e 1 0 . m a x i m u m c o n t i n u o u s d r a i n cu rrent vs case temperature 25 50 75 100 125 150 0 40 80 120 limited by package v gs = 4.5 v r t jc = 2.4 o c/w v gs = 10 v i d , drain current (a) t c , case temperature ( o c ) figure 11. 0.01 0.1 1 10 100 0.01 0.1 1 10 100 200 1 ms 10 ms 100 ms dc 10 s 1 s 100 us i d , drain current (a) v ds , drain to source voltage (v) this area is limited by r ds(on) single pulse t j = max rated r t ja = 125 o c/w t a = 25 o c f o r w a r d b i a s s a f e operating area f i g u r e 1 2 . s i n g l e p u l s e m a x i m u m po wer dissipation 10 -4 10 -3 10 -2 10 -1 110 100 1000 0.5 1 10 100 1000 2000 v gs = 10 v p (pk) , peak transient power (w) single pulse r t ja = 125 o c/w t a = 25 o c t, pulse width (sec) typical characteristics t j = 25 c unless otherwise noted
FDMC7572S n-channel power trench ? syncfet tm www.fairchildsemi.com 5 FDMC7572S rev.c1 figure 13. junction-to-ambient transient thermal response curve 10 -4 10 -3 10 -2 10 -1 11 0 100 1000 0.001 0.01 0.1 1 single pulse r t ja = 125 o c/w duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 2 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a typical characteristics t j = 25 c unless otherwise noted
FDMC7572S n-channel power trench ? syncfet tm www.fairchildsemi.com 6 FDMC7572S rev.c1 syncfet schottky body diode characteristics fairchild?s syncfet process emb eds a schottky diode in parallel with powertrench mosfet. th is diode exhibits similar characteristics to a discrete exte rnal schottky diode in parallel with a mosfet. figure 13 shows the reverses recovery characteristic of the FDMC7572S. schottky barrier diodes exhibit significant leakage at high tem - perature and high reverse voltage. this will increase the power in the device. typical char acteristics (continued) figure 13. FDMC7572S syncfet body diode reverse recovery characteristic figure 14. syncfet body diode reverses leakage versus drain-source voltage 0 5 10 15 20 25 10 -6 10 -5 10 -4 10 -3 10 -2 t j = 125 o c t j = 100 o c t j = 25 o c i dss , reverse leakage current (a) v ds , reverse voltage (v) 0 50 100 150 200 -5 0 5 10 15 20 25 di/dt = 300 a/ s current (a) time (ns)
FDMC7572S n-channel power trench ? syncfet tm www.fairchildsemi.com 7 FDMC7572S rev.c1 dimensional outline and pad layout detail a scal e: 2 x 8 1 5 4 4 1 85 land pattern recommendation 14 85 pkg c l pkg l c pkg l c l c sym see detail a notes: unless otherwise specified a) package standard reference: jedec mo-240, issue a, var. ba, dated october 2002. b) all dimensions are in millimeters. c) dimensions do not include burrs or mold flash. mold flash or burrs does not exceed 0.10mm. d) dimensioning and tolerancing per asme y14.5m-1994. e) it is recommended to have no traces or vias within the keep out area. f) drawing file name: pqfn08brev2 seating plane 3.40 3.20 a b 3.40 3.20 2.37 min (0.45) (0.40) (0.65) 2.15 min 0.70 min 0.42 min 0.65 1.95 0.65 1.95 0.37 0.27 0.10 c a b 0.50 0.30 (1.65) 2.09 1.89 (2.27) 0.52 (0.39) (0.67) (0.20) 1.00 0.85 0.10 c 0.08 c 0.23 0.18 0.05 0.00 c keep out area 3.40 1.70
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