note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. data sheet #: rc0146a doc solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com designer?s data sheet part number / ordering information 1 / sdr20 __ __ __ __ screening 2 / __ = not screened tx = tx level txv = txv s = s level package type bt = button reverse recovery uf = ultra fast voltage 60 = 600 v SDR2060UFBT 20 amp ultra fast rectifier 600 volt 60 nsec features: ? replaces do-4 and do-5 ? ultra fast recovery ? low reverse leakage current ? hermetically sealed void-free construction 3 / ? monolithic single chip construction ? high surge rating ? low thermal resistance ? higher voltages available - contact factory ? replacement for msars20e060g ? tx, txv, and space level screening available maximum ratings symbol value units peak repetitive reverse voltage and dc blocking voltage v rrm v rwm v r 600 volts average rectified forward current (resistive load, 60hz sine wave, bt tc 100c ) i o 20 amps peak surge current (8.3 ms pulse, half sine wave superimposed on io, allow junction to reach equilibrium between pulses, t a =25 o c) i fsm 100 amps operating and storage temperature t op & t stg -65 to +175 o c maximum thermal resistance junction to case r jc 2.0 o c/w notes: 1 / for ordering information, price, operating curves, and availability, contact factory. 2 / screening based on mil-prf-19500. screening flows available on request. 3 / pind testing not required on void free devices per mil-prf-19500. button (bt)
note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. data sheet #: rc0146a doc electrical characteristics (ta = 25 o c unless specified) symbol max unit instantaneous forward voltage drop i f = 5a pulsed v f1 1.25 v instantaneous forward voltage drop i f = 10a pulsed v f2 1.40 v instantaneous forward voltage drop i f = 20a pulsed v f3 1.65 v instantaneous forward voltage drop i f = 20a pulsed t a = -55 o c v f4 2.05 v instantaneous forward voltage drop i f = 20a pulsed t a = 125 o c v f5 1.70 v instantaneous forward voltage drop i f = 10a pulsed t a = -55 o c v f4 1.45 v reverse leakage current rated v r , pulsed i r1 5 a reverse leakage current rated v r , pulsed, t a = 125 o c) i r2 200 a breakdown volatge i r , = 100 a bvr 600 v (min) junction capacitance (v r =10 v dc , f = 1mhz, t a = 25 o c) c j 80 pf reverse recovery time (i f = 0.5a, i r = 1.0 a, i rr = 0.25a, t a = 25 o c) t rr 55 nsec case outlines: button (bt) a1 optional tab profile a t p2 c 2x r c1 p4 p3 ?p1 ?b dim min max a 0.125 0.150 a1 ? 0.020 ? b ? 0.190 c 0.190 0.210 c1 0.280 ref p1 0.145 0.155 p2 0.055 0.075 p4 0.060 ref t 0.008 0.012 r 0.015 ref solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR2060UFBT
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