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| savantic semiconductor product specification silicon npn power transistors 2N3226 description with to-3 package excellent safe operating area low collector saturation voltage applications for power amplifier and switching circuits applications pinning pin description 1 base 2 emitter 3 collector absolute maximum ratings (ta=25) symbol parameter conditions value unit v cbo collector-base voltage open emitter 35 v v ceo collector-emitter voltage open base 35 v v ebo emitter-base voltage open collector 5 v i c collector current 5 a p d total power dissipation t c =25 75 w t j junction temperature 150 t stg storage temperature -65~200 thermal characteristics symbol parameter value unit r (th) jc thermal resistance junction to case 1.17 /w fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2N3226 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.2a ;i b =0 35 v v ce(sat)-1 collector-emitter saturation voltage i c =3a; i b =0.3a 1.0 v v ce(sat)-2 collector-emitter saturation voltage i c =5a ;i b =1.0a 2.0 v v be(on) base-emitter on voltage i c =3a ; v ce =4v 2.0 v i ceo collector cut-off current v ce =35v; i b =0 1.0 ma i cbo collector cut-off current v cb =35v; i e =0 0.1 ma i ebo emitter cut-off current v eb =5v; i c =0 0.1 ma h fe-1 dc current gain i c =1a ; v ce =4v 40 h fe-2 dc current gain i c =3a ; v ce =4v 20 savantic semiconductor product specification 3 silicon npn power transistors 2N3226 package outline fig.2 outline dimensions (unindicated tolerance: 0.1mm) |
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