aod4126/AOI4126 100v n-channel mosfet v ds i d (at v gs =10v) 43a r ds(on) (at v gs =10v) < 24m w r ds(on) (at v gs = 7v) < 30m w 100% uis tested 100% r g tested symbol v ds drain-source voltage 100 the aod4126&AOI4126 are fabricated with sdmos tm trench technology that combines excellent r ds(on) with low gate charge.the result is outstanding efficienc y with controlled switching behavior. this universal techn ology is well suited for pwm, load switching and general pur pose applications. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 100v g d s v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r q jc 100 pulsed drain current c continuous drain current b parameter typ max t c =25c 3 50 t c =100c maximum junction-to-ambient a c/w r q ja 8 35 10 v 25 gate-source voltage drain-source voltage 100 units junction and storage temperature range -55 to 175 c thermal characteristics v avalanche energy l=0.1mh c mj avalanche current c 6 continuous drain current a 39 7.5 a 28 a t a =25c i dsm a t a =70c i d 43 30 t c =25c t c =100c power dissipation b p d w power dissipation a p dsm w t a =70c 100 1.9 t a =25c maximum junction-to-case c/w c/w maximum junction-to-ambient a d 1 42 1.5 www.freescale.net.cn 1/7 general description features
symbol min typ max units bv dss 100 v v ds =100v, v gs =0v 10 t j =55c 50 i gss 100 na v gs(th) gate threshold voltage 2 3.3 4 v i d(on) 100 a 19 24 t j =125c 36 43 23.5 30 m w g fs 34 s v sd 0.66 1 v i s 40 a c iss 1400 1770 2200 pf c oss 115 165 214 pf c rss 33 55 80 pf r g 0.3 0.65 1.0 w q g 14 28 42 nc q gs 4 9 14 nc q gd 6 10 14 nc t d(on) 12 ns t r 4 ns t 17 ns maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =10v, v ds =50v, r l =2.5 w , r =3 w gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =50v, i d =20a gate source charge gate drain charge r ds(on) static drain-source on-resistance m w i s =1a,v gs =0v v ds =5v, i d =20a v gs =7v, i d =15a v ds =v gs i d =250 m a v ds =0v, v gs = 25v zero gate voltage drain current gate-body leakage current forward transconductance diode forward voltage electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =20a reverse transfer capacitance v gs =0v, v ds =50v, f=1mhz switching parameters t d(off) 17 ns t f 5 ns t rr 12 20 26 ns q rr 60 82 110 nc body diode reverse recovery charge i f =20a, di/dt=500a/ m s turn-off delaytime r gen =3 w turn-off fall time body diode reverse recovery time i f =20a, di/dt=500a/ m s a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design, and the maximu m temperature of 175 c may be used if the pcb allows it. b. the power dissipation p d is based on t j(max) =175 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =175 c. ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedence from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =175 c. the soa curve provides a single pulse rating. g. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. www.freescale.net.cn 2/7 aod4126/AOI4126 100v n-channel mosfet
typical electrical and thermal characteristics 17 5 2 10 0 18 0 10 20 30 40 50 60 3 4 5 6 7 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 15 18 21 24 27 30 0 5 10 15 20 25 30 35 40 r ds(on) (m w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 0 25 50 75 100 125 150 175 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =7v i d =15a v gs =10v i d =20a 25 c 125 c v ds =5v v gs =7v v gs =10v 0 20 40 60 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =6v 6.5v 8v 10v 7v 40 voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 10 20 30 40 50 6 7 8 9 10 r ds(on) (m w w w w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =20a 25 c 125 c www.freescale.net.cn 3/7 aod4126/AOI4126 100v n-channel mosfet
typical electrical and thermal characteristics 17 5 2 10 0 18 0 2 4 6 8 10 0 5 10 15 20 25 30 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 500 1000 1500 2000 2500 0 20 40 60 80 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 200 400 600 800 1000 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to- c oss c rss v ds =50v i d =20a t j(max) =175 c t c =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 1000 i d (amps) v ds (volts) figure 9: maximum forward biased safe 10 m s 10ms 1ms dc r ds(on) limited t j(max) =175 c t c =25 c 100 m s 40 case (note f) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 z q q q q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse operating area (note f) r q jc =1.5 c/w www.freescale.net.cn 4/7 aod4126/AOI4126 100v n-channel mosfet
typical electrical and thermal characteristics 17 5 2 10 0 18 10 100 0.000001 0.00001 0.0001 0.001 i ar (a) peak avalanche current time in avalanche, t a (s) figure 12: single pulse avalanche capability (note c) 0 30 60 90 120 0 25 50 75 100 125 150 175 power dissipation (w) t case ( c) figure 13: power de-rating (note f) 0 10 20 30 40 50 60 0 25 50 75 100 125 150 175 current rating i d (a) t case ( c) figure 14: current de - rating (note f) t a =25 c 1 10 100 1000 0.01 1 100 power (w) pulse width (s) figure 15: single pulse power rating junction - to - t a =25 c t a =150 c t a =100 c t a =125 c 40 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 16: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse figure 14: current de - rating (note f) figure 15: single pulse power rating junction - to - ambient (note h) r q ja =42 c/w www.freescale.net.cn 5/7 aod4126/AOI4126 100v n-channel mosfet
typical electrical and thermal characteristics 0 3 6 9 12 15 50 100 150 200 250 300 0 5 10 15 20 25 30 i rm (a) q rr (nc) i s (a) figure 17: diode reverse recovery charge and peak current vs. conduction current di/dt=800a/ m s 125oc 125oc 25oc 25oc q rr i rm -2 2 6 10 14 18 22 26 30 0 30 60 90 120 150 0 200 400 600 800 1000 i rm (a) q rr (nc) di/dt (a/ m mm m s) figure 19: diode reverse recovery charge and peak current vs. di/dt 125oc 125oc 25oc 25oc i s =20a q rr i rm 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 4 8 12 16 20 24 0 5 10 15 20 25 30 s t rr (ns) i s (a) figure 18: diode reverse recovery time and softness factor vs. conduction current di/dt=800a/ m s 125oc 125oc 25oc 25oc t rr s 0 0.5 1 1.5 2 2.5 3 0 6 12 18 24 30 0 200 400 600 800 1000 s t rr (ns) di/dt (a/ m mm m s) figure 20: diode reverse recovery time and softness factor vs. di/dt 125oc 25oc 25oc 125oc i s =20a t rr s www.freescale.net.cn 6/7 aod4126/AOI4126 100v n-channel mosfet
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar vdd vgs vgs rg dut - + vdc vgs id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr www.freescale.net.cn 7/7 aod4126/AOI4126 100v n-channel mosfet
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