050-4907 rev d 7-2003 maximum ratings all ratings: t c = 25 c unless otherwise specified. static electrical characteristics symbol bv dss v ds (on) i dss i gss g fs v gs (th) characteristic / test conditions drain-source breakdown voltage (v gs = 0v, i d = 250 m a) on state drain voltage 1 ( i d (on) = 3.5a, v gs = 10v) zero gate voltage drain current (v ds = v dss , v gs = 0v) zero gate voltage drain current (v ds = 0.8 v dss , v gs = 0v, t c = 125 c) gate-source leakage current (v gs = 30v, v ds = 0v) forward transconductance (v ds = 25v, i d = 3.5a) gate threshold voltage (v ds = v gs , i d = 50ma) min typ max 900 7 25 250 100 4 5.7 25 unit volts m a na mhos volts symbol v dss v dgo i d v gs p d r q jc t j ,t stg t l parameter drain-source voltage drain-gate voltage continuous drain current @ t c = 25 c gate-source voltage total power dissipation @ t c = 25 c junction to case operating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. arf446/447 900 900 6.5 30 230 0.55 -55 to 150 300 unit volts amps volts watts c/w c rf power mosfets n - ch an nel enhancement mo de 250v 140w 65mhz the arf446 and arf447 comprise a symmetric pair of common source rf power transistors designed for push-pull scientific, commercial, medical and industrial rf power amplifier applications up to 65 mhz. specified 250 volt, 40.68 mhz characteristics: output power = 140 watts. gain = 15db (class c) efficiency = 75% low cost common source rf package. very high breakdown for improved ruggedness. low thermal resistance. nitride passivated die for improved reliability. to-247 arf446 arf447 g d s common source caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt w ebsite - http://www .ad v ancedpo wer .com
050-4907 rev d 7-2003 dynamic characteristics arf446/447 symbol c iss c oss c rss t d(on) t r t d(off) t f characteristic input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time test conditions v gs = 0v v ds = 300v f = 1 mhz v gs = 15v v dd = 0.5 v dss i d = i d[cont.] @ 25 c r g = 1.6 w min typ max 1500 1800 70 130 27 50 71 5 51 0 23 40 12 25 unit pf ns functional characteristics symbol g ps h y test conditions f = 27.12 mhz v gs = 0v v dd = 300v p out = 140w no degradation in output power characteristic common source amplifier power gain drain efficiency electrical ruggedness vswr 20:1 min typ max 20 80 unit db % 1 pulse test: pulse width < 380 m s, duty cycle < 2% apt reserves the right to change, without notice, the specifications and information contained herein. g ps h y f = 40.68 mhz v gs = 0v v dd = 250v p out = 140w no degradation in output power common source amplifier power gain drain efficiency electrical ruggedness vswr 20:1 13 15 70 75 db % 30 10 5 1 .5 .1 1 5 10 50 100 1000 gain (db) frequency (mhz) figure 1, typical gain vs frequency 30 25 20 15 10 5 0 10 20 30 40 50 60 65 class c v dd = 250v p out = 250w 16 12 8 4 0 0 2 468 capacitance (pf) v ds , drain-to-source voltage (volts) figure 2, typical capacitance vs. drain-to-source voltage 3000 1000 500 100 50 10 1 5 10 50 100 300 c iss c oss c rss i d , drain current (amperes) v ds , drain-to-source voltage (volts) figure 4, typical maximum safe operating area v gs , gate-to-source voltage (volts) figure 3, typical transfer characteristics i d , drain current (amperes) v ds > i d (on) x r ds (on)max. 25 0 m sec. pulse test @ < 0.5 % duty cycle t j = -55 c t j = -55 c t j = +125 c t j = +25 c t c =+25 c t j =+150 c single pulse operation here limited by r ds (on) 10 m s 1ms 10ms 100ms dc 100 m s
050-4907 rev d 7-2003 g ps , common source amplifier gain (db) p out , power out (watts) figure 8, typical common source amplifier gain vs power out 18 16 14 12 10 8 0 5 0 100 150 200 250 300 t c , case temperature ( c) figure 5, typical threshold voltage vs temperature 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 2 5 5 0 7 5 100 125 150 300 250 200 150 100 50 0 02 4 6 8 1 0 16 12 8 4 0 1 5 10 15 20 25 30 p in , power in (watts) figure 7, typical power out vs power in p out , power out (watts) v ds , drain-to-source voltage (volts) figure 6, typical output characteristics i d , drain current (amperes) v gs(th) , threshold voltage (normalized) arf446/447 5.5v 4.5v 5v 6v v gs =6.5, 8, 10 & 15v z q jc , thermal impedance ( c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10 rectangular pulse duration (seconds) figure 9, typical maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.6 0.1 0.05 0.01 0.005 0.001 note: duty factor d = t 1 / t 2 peak t j = p dm x z q jc + t c t 1 t 2 p dm 0.1 single pulse 0.02 0.05 0.2 d=0.5 0.01 class c v dd = 250v f = 40.68 mhz table 1 - typical class c large signal inpu t-o utput impedance freq. (mhz) z in - gate shunted by 25 w z ol - conjugate of optimum load impedance for 250w at 250v z in ( w )z ol ( w ) 2.0 13.5 27.0 40.0 65.0 142.0 - j 20 73.0 - j 71 30.0 - j 57 15.0 - j 42 6.2 - j 25 20.40 - j 9.6 2.10 - j 6.4 0.50 - j 2.3 0.30 - j 0.4 0.46 + j 2.0 class c v dd = 250v f = 40.68 mhz
050-4907 rev d 7-2003 to-247 package outline 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 5.45 (.215) bsc 3.55 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) source 2-plcs. top view arf446 device arf447 gate drain source source drain gate dimensions in millimeters and (inches) note: the arf446 and arf447 comprise a symmetric pair of rf power transistors and meet the same electrical specifications. the device pin-outs are the mirror image of each other to allow ease of use as a push-pull pair. arf446/447 l1 c1 t1 r1 dut l2 l3 c2 c3 c4 c5 c6 l4 250v + - rf output rf input c1-c3 -- arco 465 or equivalent c4-c6 -- 1nf 500v cog chip l1 -- 2t #18 awg .25" id l2 -- 3t #18 awg .25" id l3 -- 8t #18 awg .25" id l4 -- vk200-4b ferrite choke 3mh r1 -- 25 ohm 1/2w carbon t1 -- 4:1 broadband transformer 40.68 mhz test circuit parts list 40.68 mhz test circuit apt?s products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign pat ents pending. all rights reserved.
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