SI6928DQ vishay siliconix document number: 70663 s-56945erev. c, 23-nov-98 www.vishay.com faxback 408-970-5600 2-1 dual n-channel 30-v (d-s) mosfet
v ds (v) r ds(on) ( ) i d (a) 30 0.035 @ v gs = 10 v 4.0 30 0.050 @ v gs = 4.5 v 3.4 SI6928DQ d 1 s 1 s 1 g 1 1 2 3 4 8 7 6 5 d 2 s 2 s 2 g 2 tssop-8 top view d 1 g 1 s 1 n-channel mosfet d 2 g 2 s 2 n-channel mosfet
parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current ( t j = 150 c ) a t a = 25 c i d 4.0 a continuous drain current (t j = 150 c) a t a = 70 c i d 3.2 a pulsed drain current i dm 20 a continuous source current (diode conduction) a i s 1.25 maximum power dissipation a t a = 25 c p d 1.0 w maximum power dissipation a t a = 70 c p d 0.64 w operating junction and storage temperature range t j , t stg 55 to 150 c
parameter symbol limit unit maximum junction-to-ambient a r thja 125 c/w notes a. surface mounted on fr4 board, t 10 sec. for spice model information via the worldwide web: http://www.vishay.com/www/product/spice.htm
SI6928DQ vishay siliconix www.vishay.com faxback 408-970-5600 2-2 document number: 70663 s-56945erev. c, 23-nov-98
parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1 a zero gate v oltage drain current i dss v ds = 30 v, v gs = 0 v, t j = 55 c 5 a on-state drain current a i d(on) v ds 5 v, v gs = 10 v 20 a drain - source on - state resistance a r ds(on) v gs = 10 v, i d = 4.0 a 0.027 0.035 d ra i n- s ource o n- st a t e r es i s t ance a r ds(on) v gs = 4.5 v, i d = 3.4 a 0.038 0.050 forward transconductance a g fs v ds = 15 v, i d = 4.0 a 13 s diode forward voltage a v sd i s = 1.25 a, v gs = 0 v 0.73 1.2 v dynamic b gate charge q g v ds = 15 v, v gs = 5 v, i d = 4.0 a 9 14 c total gate charge q gt v15vv10vi40a 17.5 30 nc gate-source charge q gs v ds = 15 v, v gs = 10 v, i d = 4.0 a 4.0 nc gate-drain charge q gd 2.5 turn-on delay time t d(on) v15vr6 12 20 rise time t r v dd = 15 v, r l = 6 i 1 a v 10 v r 6 9 20 turn-off delay time t d(off) dd , l i d 1 a, v gen = 10 v, r g = 6 25 50 ns fall time t f 20 40 source-drain reverse recovery time t rr i f = 1.25 a, di/dt = 100 a/ s 25 60 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing.
SI6928DQ vishay siliconix document number: 70663 s-56945erev. c, 23-nov-98 www.vishay.com faxback 408-970-5600 2-3
0 4 8 12 16 20 0246810 0 2 4 6 8 10 0 4 8 12 16 20 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 50 25 0 25 50 75 100 125 150 0 0.01 0.02 0.03 0.04 0.05 0.06 0 4 8 12 16 20 0 300 600 900 1200 1500 0 6 12 18 24 30 0 4 8 12 16 20 012345 output characteristics transfer characteristics gate charge on-resistance vs. drain current v ds drain-to-source voltage (v) drain current (a) i d v gs = 10 thru 5 v v gs gate-to-source voltage (v) drain current (a) i d t c = 125 c gate-to-source voltage (v) q g total gate charge (nc) v ds drain-to-source voltage (v) c capacitance (pf) v gs c rss c oss c iss v ds = 15 v i d = 4.0 a on-resistance ( r ds(on) ) i d drain current (a) capacitance on-resistance vs. junction temperature v gs = 10 v i d = 4.0 a t j junction temperature ( c) (normalized) on-resistance ( r ds(on) ) v gs = 4.5 v 4 v 3 v 55 c 25 c v gs = 10 v
SI6928DQ vishay siliconix www.vishay.com faxback 408-970-5600 2-4 document number: 70663 s-56945erev. c, 23-nov-98
0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient 2 1 0.1 0.01 10 4 10 3 10 2 10 1 11030 1. duty cycle, d = 2. per unit base = r thja = 125 c/w 3. t jm t a = p dm z thja (t) t 1 t 2 t 1 notes: 4. surface mounted p dm t 2 source-drain diode forward voltage on-resistance vs. gate-to-source voltage threshold voltage single pulse power square wave pulse duration (sec) normalized effective transient thermal impedance on-resistance ( r ds(on) ) v sd source-to-drain voltage (v) v gs gate-to-source voltage (v) source current (a) i s t j temperature ( c) 0 0.03 0.06 0.09 0.12 13579 0.9 0.6 0.3 0.0 0.3 0.6 50 25 0 25 50 75 100 125 150 t j = 150 c t j = 25 c i d = 4.0 a i d = 250 a variance (v) v gs(th) 20 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 time (sec) power (w) 40 32 24 16 8 0 0.01 0.1 1 10 30
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