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1/11 october 2002 std2nc45-1 STQ1NC45R n-channel 450v - 4.1 w - 1.5 a ipak / to-92 supermesh?power mosfet n typical r ds (on) = 4.1 w n extremely high dv/dt capability n 100% avalanche tested n gate charge minimized n new high voltage benchmark description the supermesh? series is obtained through an extreme optimization of sts well established strip- based powermesh? layout. in addition to pushing on-resistance significantly down, special care is tak- en to ensure a very good dv/dt capability for the most demanding applications. such series comple- ments st full range of high voltage mosfets in- cluding revolutionary mdmesh? products. applications n switch mode low power supplies (smps) n low power, low cost cfl (compact fluorescent lamps) n low power battery chargers ordering information type v dss r ds(on) i d pw std2nc45-1 STQ1NC45R 450 v 450 v < 4.5 w < 4.5 w 1.5 a 0.5 a 30 w 3.1 w sales type marking package packaging std2nc45-1 d2nc45 ipak tube STQ1NC45R q1nc45r to-92 bulk STQ1NC45R-ap q1nc45r to-92 ammopak ipak 3 2 1 to-92 to-92 (ammopack) bulk internal schematic diagram
std2nc45-1, STQ1NC45R 2/11 absolute maximum ratings ( ) pulse width limited by safe operating area (1) i sd 0.5a, di/dt 100a/s, v dd v (br)dss ,t j t jmax. thermal data avalanche characteristics symbol parameter value unit std2nc45-1 STQ1NC45R v ds drain-source voltage (v gs =0) 450 v v dgr drain-gate voltage (r gs =20k w ) 450 v v gs gate- source voltage 50 v i d drain current (continuos) at t c = 25c 1.5 0.5 a i d drain current (continuos) at t c = 100c 0.95 0.315 a i dm ( ) drain current (pulsed) 6 2 a p tot total dissipation at t c = 25c 30 3.1 w derating factor 0.24 0.025 w/c dv/dt (1) peak diode recovery voltage slope 3 v/ns t j t stg operating junction temperature storage temperature -65 to 150 -65 to 150 c c ipak to-92 rthj-case thermal resistance junction-case max 4.1 c/w rthj-amb thermal resistance junction-ambient max 100 120 c/w rthj-lead thermal resistance junction-lead max 40 c/w t l maximum lead temperature for soldering purpose 275 260 c symbol parameter max value unit ipak to-92 i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 1.5 a e as single pulse avalanche energy (starting t j = 25 c, i d =i ar ,v dd =50v) 25 mj
3/11 std2nc45-1, STQ1NC45R electrical characteristics (tcase =25c unless otherwise specified) on/off dynamic switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 450 v i dss zero gate voltage drain current (v gs =0) v ds = max rating v ds = max rating, t c = 125 c 1 50 a a i gss gate-body leakage current (v ds =0) v gs = 30v 100 na v gs(th) gate threshold voltage v ds =v gs ,i d = 250a 2.3 3 3.7 v r ds(on) static drain-source on resistance v gs =10v,i d = 0.5 a 4.1 4.5 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds >i d(on) xr ds(on)max, i d = 0.5 a 1.1 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v,f=1mhz,v gs =0 160 27.5 4.7 pf pf pf symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd =225v,i d = 0.5 a r g = 4.7 w v gs =10v (resistive load see, figure 3) 6.7 4 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =360v,i d = 1.5 a, v gs =10v,r g = 4.7 w 7 1.3 3.2 10 nc nc nc symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 360v, i d = 1.5 a, r g =4.7 w, v gs = 10v (inductive load see, figure 5) 8.5 12 18 ns ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm (2) source-drain current source-drain current (pulsed) 1.5 6.0 a a v sd (1) forward on voltage i sd = 1.5 a, v gs =0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 1.5 a, di/dt = 100a/s v dd =100v,t j =150c (see test circuit, figure 5) 225 530 4.7 ns c a
std2nc45-1, STQ1NC45R 4/11 safe operating area for ipak thermal impedance for to-92 safe operating area for to-92 thermal impedance for ipak output characteristics transfer characteristics
5/11 std2nc45-1, STQ1NC45R normalized gate threshold voltage vs temp. normalized on resistance vs temperature gate charge vs gate-source voltage transconductance static drain-source on resistance capacitance variations
std2nc45-1, STQ1NC45R 6/11 maximum avalanche energy vs temperature max id current vs tc source-drain diode forward characteristics normalized bvdss vs temperature
7/11 std2nc45-1, STQ1NC45R fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
std2nc45-1, STQ1NC45R 8/11 dim. mm inch min. typ. max. min. typ. max. a 2.2 2.4 0.086 0.094 a1 0.9 1.1 0.035 0.043 a3 0.7 1.3 0.027 0.051 b 0.64 0.9 0.025 0.031 b2 5.2 5.4 0.204 0.212 b3 0.85 0.033 b5 0.3 0.012 b6 0.95 0.037 c 0.45 0.6 0.017 0.023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 e 6.4 6.6 0.252 0.260 g 4.4 4.6 0.173 0.181 h 15.9 16.3 0.626 0.641 l 9 9.4 0.354 0.370 l1 0.8 1.2 0.031 0.047 l2 0.8 1 0.031 0.039 a c2 c a3 h a1 d l l2 l1 1 3 = = b3 b b6 b2 e g = = = = b5 2 to-251 (ipak) mechanical data 0068771-e
9/11 std2nc45-1, STQ1NC45R dim. mm inch min. typ. max. min. typ. max. a 4.58 5.33 0.180 0.210 b 4.45 5.2 0.175 0.204 c 3.2 4.2 0.126 0.165 d 12.7 0.500 e1.27 0.050 f 0.4 0.51 0.016 0.020 g0.35 0.14 to-92 mechanical data
std2nc45-1, STQ1NC45R 10/11 dim. mm. inch min. typ max. min. typ. max. a1 4.8 0.19 t 3.8 0.15 t1 1.6 0.06 t2 2.3 0.09 d 0.48 0.02 p0 12.5 12.7 12.9 0.49 0.5 0.51 p2 5.65 6.35 7.05 0.22 0.25 0.27 f1, f2 2.44 2.54 2.94 0.09 0.1 0.11 delta h -2 2 -0.08 0.08 w 17.5 18 19 0.69 0.71 0.74 w0 5.7 6 6.3 0.22 0.23 0.24 w1 8.5 9 9.25 0.33 0.35 0.36 w2 0.5 0.02 h 18.5 20.5 0.72 0.80 h0 15.5 16 16.5 0.61 0.63 0.65 h1 25 0.98 d0 3.8 4 4.2 0.15 0.157 0.16 t 0.9 0.035 l 11 0.43 l1 3 0.11 delta p -1 1 -0.04 0.04 to-92 ammopack
11/11 std2nc45-1, STQ1NC45R information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no res ponsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devi ces or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2002 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco singapore - spain - sweden - switzerland - united kingdom - united states. ? http://www.st.com

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