inchange semiconductor isc product specification isc silicon pnp darlingtion power transistor PMD11K60 description high dc current gain collector-emitter sustaining voltage- v ceo(sus) = -60v(min) complement to type pmd10k60 applications designed for general purpose amplifier and low frequency switching applications absolute maximum ratings(t c =25 ) symbol parameter value unit v cbo collector-base voltage -60 v v ceo collector-emitter voltage -60 v v ebo emitter-base voltage -5.0 v i c collector current -continuous -12 a i cp collector current-peak -20 a i b b base current -0.2 a p c collector power dissipation@t c =25 150 w t j junction temperature 150 t stg storage temperature -65~200 thermal characteristics symbol parameter max unit r th j-c thermalresistance, junction to case 1.17 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp darlingtion power transistor PMD11K60 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v ceo(sus) collector-emitter sustaining voltage i c = -100ma; i b = 0 -60 v v ce (sat) collector-emitter saturation voltage i c = -6a; i b = -24ma b -2.0 v v be (sat) base-emitter saturation voltage i c = -6a; i b = -24ma b -2.8 v v be (on) base-emitter on voltage i c = -6a; v ce = -3v -2.8 v i cer collector cutoff current v ce = -60v; r be = 1k v ce = -60v; r be = 1k , t c =150 -1.0 -5.0 ma i ebo emitter cut-off current v eb = -5v; i c = 0 -2.0 ma h fe dc current gain i c = -6a; v ce = -3v 800 20000 f t current-gain?bandwidth product i c = -5a; v ce = -3v, f= 1khz 4 mhz c ob output capacitance i e = 0; v cb = -10v; f test = 1.0mhz 300 pf isc website www.iscsemi.cn 2
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