g 2 s 2 n-channel 2 mosfet schottky diode g 1 d 1 n-channel 1 mosfet s 1 /d 2 features little foot plus integrated schottky alternative pinning for additional layout options applications dc/dc converters - notebook SI4814DY vishay siliconix document number: 71685 s-03951?rev. c, 26-may-03 www.vishay.com 1 dual n-channel 30-v (d-s) mosfet with schottky diode product summary v ds (v) r ds(on) ( ) i d (a) channel 1 0.021 @ v gs = 10 v 7.0 channel-1 30 0.0325 @ v gs = 4.5 v 5.6 channel 2 30 0.020 @ v gs = 10 v 7.4 channel-2 0.0265 @ v gs = 4.5 v 8.4 schottky product summary v ds (v) v sd (v) diode forward voltage i f (a) 30 0.50 v @ 1.0 a 2.0 d 1 g 1 d 1 s 1 /d 2 g 2 s 1 /d 2 s 2 s 1 /d 2 so-8 5 6 7 8 top view 2 3 4 1 ordering information: SI4814DY SI4814DY-t1 (with t ape and reel) absolute maximum ratings (t a = 25 c unless otherwise noted) channel-1 channel-2 parameter symbol 10 secs steady state 10 secs steady state unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current (t j = 150 c) a t a = 25 c i d 7.0 5.5 7.4 5.7 continuous drain current (t j = 150 c) a t a = 70 c i d 5.6 4.3 6 4.5 a pulsed drain current i dm 40 40 a continuous source current (diode conduction) a i s 1.7 1.0 1.8 0.95 maximum power dissipation a t a = 25 c p d 1.9 1.1 2.0 1.16 w maximum power dissipation a t a = 70 c p d 1.2 0.71 1.3 0.74 w operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings channel-1 channel-2 parameter s y mbol typ max typ max unit mi j ti tabit a t 10 sec r 52 65 47 60 maximum junction-to-ambient a steady-state r thja 90 112 85 107 c/w maximum junction-to-foot (drain) steady-state r thjf 30 38 28 35 c/w notes a. surface mounted on 1? x 1? fr4 board.
SI4814DY vishay siliconix www.vishay.com 2 document number: 71685 s-03951?rev. c, 26-may-03 mosfet specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ a max unit static gate threshold voltage v gs( h) v ds = v gs i d = 250 a ch-1 0.8 v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a ch 1 ch-2 0.8 v gate body leakage i gss v ds = 0 v v gs = 20 v ch-1 100 na gate-body leakage i gss v ds = 0 v, v gs = 20 v ch 1 ch-2 100 na v ds = 24 v v gs = 0 v ch-1 1 zero gate voltage drain current i dss v ds = 24 v, v gs = 0 v ch 1 ch-2 100 a zero gate voltage drain current i dss v ds = 24 v v gs = 0 v t j = 85 c ch-1 15 a v ds = 24 v, v gs = 0 v, t j = 85 c ch 1 ch-2 2000 on state drain current b i d( ) v ds = 5 v v gs = 10 v ch-1 20 a on-state drain current b i d(on) v ds = 5 v, v gs = 10 v ch 1 ch-2 20 a v gs = 10 v, i d = 7.0 a ch-1 0.0175 0.021 drain source on state resistance b r ds( ) v gs = 10 v, i d = 7.4 a ch 1 ch-2 0.0165 0.020 drain-source on-state resistance b r ds(on) v gs = 4.5 v, i d = 5.6 a ch-1 0.027 0.0325 v gs = 4.5 v, i d = 8.4 a ch 1 ch-2 0.022 0.0265 forward transconductance b g f v ds = 15 v, i d = 7.0 a ch-1 17 s forward transconductance b g fs v ds = 15 v, i d = 7.4 a ch 1 ch-2 20 s diode forward voltage b v sd i s = 1.7 a, v gs = 0 v ch-1 0.7 1.1 v diode forward voltage b v sd i s = 1 a, v gs = 0 v ch 1 ch-2 0.47 0.5 v dynamic a total gate charge q ch-1 6.5 10 total gate charge q g channel-1 ch 1 ch-2 9.7 15 gate source charge q channel-1 v ds = 15 v, v gs = 5 v, i d = 7.0 a ch-1 1.5 nc gate-source charge q gs channel-2 ch 1 ch-2 2.6 nc gate drain charge q d channel - 2 v ds = 15 v, v gs = 5 v, i d = - 7.4 a ch-1 2.7 gate-drain charge q gd ds gs d ch 1 ch-2 3.8 gate resistance r g ch-1 0.5 1.6 2.6 gate resistance r g ch 1 ch-2 0.5 1.8 3.1 turn on delay time t d( ) ch-1 12 20 turn-on delay time t d(on) channel 1 ch 1 ch-2 13 20 rise time t channel-1 v dd = 15 v, r l = 15 ch-1 13 20 rise time t r v dd = 15 v , r l = 15 i d 1 a, v gen = 10 v, r g = 6 ch 1 ch-2 13 20 turn off delay time t d( ff) channel-2 ch-1 22 35 ns turn-off delay time t d(off) channel - 2 v dd = 15 v, r l = 15 i 1 a v 10 v r 6 ch 1 ch-2 29 45 ns fall time t f dd l i d 1 a, v gen = 10 v, r g = 6 ch-1 8 15 fall time t f ch 1 ch-2 12 20 source drain reverse recovery time t i f = 1.3 a, di/dt = 100 a/ s ch-1 50 80 source-drain reverse recovery time t rr i f = 2.2 a, di/dt = 100 a/ s ch 1 ch-2 46 80 notes a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2%. schottky specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit forward v oltage drop v f i f = 1.0 a 0.47 0.50 v forward voltage drop v f i f = 1.0 a, t j = 125 c 0.36 0.42 v v r = 30 v 0.004 0.100 maximum reverse leakage current i rm v r = 30 v, t j = 100 c 0.7 10 ma maximum reverse leakage current i rm v r = - 30 v, t j = 125 c 3.0 20 ma junction capacitance c t v r = 10 v 50 pf
SI4814DY vishay siliconix document number: 71685 s-03951?rev. c, 26-may-03 www.vishay.com 3 typical characteristics (25 c unless noted) channel?1 0.00 0.01 0.02 0.03 0.04 0.05 0 8 16 24 32 40 on-resistance vs. drain current - on-resistance ( r ds(on) ) i d - drain current (a) v gs = 4.5 v v gs = 10 v 0 8 16 24 32 40 012345 0 150 300 450 600 750 0 6 12 18 24 30 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 0 8 16 24 32 40 0246810 0 1 2 3 4 5 0.0 1.5 3.0 4.5 6.0 7.5 v gs = 10 thru 5 v t c = 125 c -55 c v ds - drain-to-source voltage (v) c rss c oss c iss v ds = 15 v i d = 7 a v gs = 10 v i d = 7 a 25 c output characteristics transfer characteristics gate charge v ds - drain-to-source voltage (v) - drain current (a) i d v gs - gate-to-source voltage (v) - drain current (a) i d - gate-to-source voltage (v) q g - total gate charge (nc) c - capacitance (pf) v gs capacitance on-resistance vs. junction t emperature t j - junction temperature ( c) (normalized) - on-resistance ( r ds(on) ) 3 v 4 v
SI4814DY vishay siliconix www.vishay.com 4 document number: 71685 s-03951?rev. c, 26-may-03 typical characteristics (25 c unless noted) channel?1 0.00 0.02 0.04 0.06 0.08 0.10 0246810 on-resistance vs. gate-to-s ource v oltage v gs - gate-to-source voltage (v) i d = 7 a - on-resistance ( r ds(on) ) 0.001 0 1 120 40 60 10 0.1 single pulse power, junction-to-ambient time (sec) 20 80 power (w) - 0.8 - 0.6 - 0.4 - 0.2 - 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 t j = 150 c i d = 250 a 50 10 1 2 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 1 10 600 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 threshold v oltage variance (v) v gs(th) t j - temperature ( c) source-drain diode forward voltage normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance v sd - source-to-drain voltage (v) - source current (a) i s 1. duty cycle, d = 2. per unit base = r thja = 90 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 100 t j = 25 c 0.01 100
SI4814DY vishay siliconix document number: 71685 s-03951?rev. c, 26-may-03 www.vishay.com 5 typical characteristics (25 c unless noted) channel?1 10 -3 10 -2 110 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance typical characteristics (25 c unless noted) channel?2 0 8 16 24 32 40 012345 0.00 0.01 0.02 0.03 0.04 0.05 0 8 16 24 32 40 0 8 16 24 32 40 0246810 0 300 600 900 1200 1500 0 6 12 18 24 30 v gs = 10 thru 4 v 25 c t c = 125 c c rss c oss c iss v gs = 4.5 v v gs = 10 v -55 c 3 v output characteristics transfer characteristics on-resistance vs. drain current v ds - drain-to-source voltage (v) - drain current (a) i d v gs - gate-to-source voltage (v) - drain current (a) i d v ds - drain-to-source voltage (v) c - capacitance (pf) - on-resistance ( r ds(on) ) i d - drain current (a) capacitance
SI4814DY vishay siliconix www.vishay.com 6 document number: 71685 s-03951?rev. c, 26-may-03 typical characteristics (25 c unless noted) channel?2 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.001 0 1 120 40 60 10 0.1 single pulse power, junction-to-ambient time (sec) 20 80 power (w) 0.01 100 0 1 2 3 4 5 0246810 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 v ds = 15 v i d = 7.4 a v gs = 10 v i d = 7.4 a gate charge - gate-to-source voltage (v) q g - total gate charge (nc) v gs on-resistance vs. junction t emperature t j - junction temperature ( c) (normalized) - on-resistance ( r ds(on) ) 0.00 0.02 0.04 0.06 0.08 0.10 0246810 on-resistance vs. gate-to-s ource v oltage v gs - gate-to-source voltage (v) i d = 7.4 a - on-resistance ( r ds(on) ) t j = 150 c 50 10 1 reverse current vs. junction t emperature - reverse current (ma) i r t j - temperature ( c) source-drain diode forward voltage v sd - source-to-drain voltage (v) - source current (a) i s t j = 25 c 1 -1 1 10 1 -2 1 -3 1 -4 1 -5 30 v 24 v
SI4814DY vishay siliconix document number: 71685 s-03951?rev. c, 26-may-03 www.vishay.com 7 typical characteristics (25 c unless noted) channel?2 10 -3 10 -2 110 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 2 1 0.1 0.01 10 -3 10 -2 1 10 600 10 -1 10 -4 duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 100 1. duty cycle, d = 2. per unit base = r thja = 85 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm
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