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| geometry process details principal device types cmpz5221b thru cmpz5234b gross die per 4 inch wafer 61,141 process cpz18 zener diode 0.5 watt zener diode chip process epitaxial planar die size 13.8 x 13.8 mils die thickness 7.5 mils anode bonding pad area 7.5 x 7.5 mils top side metalization al - 13,000? back side metalization au - 14,000? backside cathode www.centralsemi.com r6 (22-march 2010)
i z , reverse current (a) process cpz18 typical electrical characteristics www.centralsemi.com r6 (22-march 2010) |
Price & Availability of CPZ1810
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