?2001 fairchild semiconductor corporation rev. a1, july 2001 KSR1013 npn epitaxial silicon transistor absolute maximum ratings t a =25 c unless otherwise noted electrical characteristics t a =25 c unless otherwise noted symbol parameter value units v cbo collector-base voltage 50 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 10 v i c collector current 100 ma p c collector power dissipation 300 mw t j junction temperature 150 c t stg storage temperature -55 ~ 150 c symbol parameter test condition min. typ. max. units bv cbo collector-base breakdown voltage i c =10 a, i e =0 50 v bv ceo collector-emitter breakdown voltage i c =100 a, i b =0 50 v i cbo collector cut-off current v cb =40v, i e =0 0.1 a h fe dc current gain v ce =5v, i c =5ma 68 v ce (sat) collector-emitter saturation voltage i c =10ma, i b =0.5ma 0.3 v f t current gain bandwidth product v ce =10v, i c =5ma 250 mhz c ob output capacitance v cb =10v, i e =0 f=1.0mhz 3.7 pf v i (off) input off voltage v ce =5v, i c =100 a0.5 v v i (on) input on voltage v ce =0.2v, i c =5ma 1.1 v r 1 input resistor 1.5 2.2 2.9 k ? r 1 /r 2 resistor ratio 0.042 0.047 0.052 KSR1013 switching application (bias resistor built in) ? switching circuit, inverter, interface circuit, driver circuit ? built in bias resistor (r 1 =2.2k ? , r 2 =47k ? ) ? complement to ksr2013 equivalent circuit b e c r1 r2 1. emitter 2. collector 3. base to-92 1
0.46 0.10 1.27typ (r2.29) 3.86max [1.27 0.20 ] 1.27typ [1.27 0.20 ] 3.60 0.20 14.47 0.40 1.02 0.10 (0.25) 4.58 0.20 4.58 +0.25 ?.15 0.38 +0.10 ?.05 0.38 +0.10 ?.05 to-92 package demensions ?2001 fairchild semiconductor corporation rev. a1, july 2001 KSR1013 dimensions in millimeters
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