SI3442DV vishay siliconix document number: 70192 s-49525erev. c, 06-oct-97 www.vishay.com faxback 408-970-5600 2-1 n-channel 2.5-v (g-s) mosfet
v ds (v) r ds(on) ( ) i d (a) 20 0.07 @ v gs = 4.5 v 4.0 20 0.095 @ v gs = 2.5 v 3.4 (1, 2, 5, 6) d (3) g (4) s n-channel mosfet tsop-6 top view 6 4 1 2 3 5 2.85 mm 3 mm
parameter symbol limit unit drain-source voltage v ds 20 v gate-source voltage v gs 8 v continuous drain current ( t j = 150 c ) a t a = 25 c i d 4.0 a continuous drain current (t j = 150 c) a t a = 70 c i d 3.1 a pulsed drain current i dm 20 a continuous source current (diode conduction) a i s 1.6 maximum power dissipation a t a = 25 c p d 2.0 w maximum power dissipation a t a = 70 c p d 1.28 w operating junction and storage temperature range t j , t stg 55 to 150 c
parameter symbol limit unit maximum junction-to-ambient a r thja 62.5 c/w notes a. surface mounted on fr4 board, t 5 sec. for spice model information via the worldwide web: http://www.vishay.com/www/product/spice.htm
SI3442DV vishay siliconix www.vishay.com faxback 408-970-5600 2-2 document number: 70192 s-49525erev. c, 06-oct-97
parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.6 v gate-body leakage i gss v ds = 0 v, v gs = 8 v 100 na zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v 1 a zero gate v oltage drain current i dss v ds = 20 v, v gs = 0 v, t j = 70 c 5 a on-state drain current a i d(on) v ds = 5 v, v gs = 4.5 v 10 a on-state drain current a i d(on) v ds = 5 v, v gs = 2.5 v 4 a drain source on state resistance a r ds( ) v gs = 4.5 v, i d = 4.0 a 0.058 0.07 drain-source on-state resistance a r ds(on) v gs = 2.5 v, i d = 3.4 a 0.072 0.095 forward transconductance a g fs v ds = 10 v, i d = 4.0 a 11.3 s diode forward voltage a v sd i s = 1.6 a, v gs = 0 v 0.75 1.2 v dynamic b total gate charge q g v10vv45vi40a 7.0 10 c gate-source charge q gs v ds = 10 v, v gs = 4.5 v, i d = 4.0 a 1.1 nc gate-drain charge q gd 2.0 turn-on delay time t d(on) v10vr10 8 20 rise time t r v dd = 10 v, r l = 10 i1av 45vr6 24 40 turn-off delay time t d(off) dd , l i d 1 a, v gen = 4.5 v, r g = 6 35 60 ns fall time t f 10 20 source-drain reverse recovery time t rr i f = 1.6 a, di/dt = 100 a/ s 40 70 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing.
SI3442DV vishay siliconix document number: 70192 s-49525erev. c, 06-oct-97 www.vishay.com faxback 408-970-5600 2-3
0 4 8 12 16 20 012345 0 1 2 3 4 5 02468 0.6 0.8 1.0 1.2 1.4 1.6 1.8 50 25 0 25 50 75 100 125 150 0 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0 4 8 12 16 20 0 4 8 12 16 20 0 0.5 1.0 1.5 2.0 2.5 3.0 output characteristics transfer characteristics gate charge on-resistance vs. drain current v ds drain-to-source voltage (v) drain current (a) i d v gs gate-to-source voltage (v) drain current (a) i d gate-to-source voltage (v) q g total gate charge (nc) v ds drain-to-source voltage (v) c capacitance (pf) v gs c rss c oss v ds = 10 v i d = 4 a on-resistance ( r ds(on) ) i d drain current (a) capacitance on-resistance vs. junction temperature v gs = 4.5 v i d = 4 a t j junction temperature ( c) (normalized) on-resistance ( r ds(on) ) v gs = 4.5, 4, 3.5, 3 v 1.5 v 2 v 2.5 v t c = 55 c 125 c 25 c v gs = 4.5 v v gs = 2.5 v 0 200 400 600 800 1000 1200 0 4 8 12 16 20 c iss
SI3442DV vishay siliconix www.vishay.com faxback 408-970-5600 2-4 document number: 70192 s-49525erev. c, 06-oct-97
0 0.25 0.50 0.75 1.00 1.25 1.50 source-drain diode forward voltage on-resistance vs. gate-to-source voltage threshold voltage single pulse power normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance on-resistance ( r ds(on) ) v sd source-to-drain voltage (v) v gs gate-to-source voltage (v) source current (a) i s t j temperature ( c) time (sec) power (w) 0 0.04 0.08 0.12 0.16 0.20 02468 0.4 0.3 0.2 0.1 0.0 0.1 0.2 50 25 0 25 50 75 100 125 150 t j = 150 c t j = 25 c i d = 4 a i d = 250 a variance (v) v gs(th) 20 10 1 0 4 8 12 16 20 0.01 0.10 1.00 10.00 2 1 0.1 0.01 10 4 10 3 10 2 10 1 11030 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 1. duty cycle, d = 2. per unit base = r thja = 62.5 c/w 3. t jm t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm
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