sot23 n-channel enhancement mode vertical dmos fet issue 2 C december 1995 parmarking detail - mz absolute maximum ratings. parameter symbol value unit drain-source voltage v ds 60 v continuous drain current at t amb =25c i d 0.2 a pulsed drain current i dm 3a gate-source voltage v gs 20 v max power dissipation at t amb =25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. max. unit conditions. drain-source breakdown voltage bv dss 60 v i d =1ma, v gs =0v gate-source threshold voltage v gs(th) 1.3 3 v i d =1ma, v ds = v gs gate-body leakage i gss 100 na v gs = 20v, v ds =0v zero gate voltage drain current i dss 10 50 m a m a v ds =60v, v gs =0 v ds =48v, v gs =0v, t=125c (2) on-state drain current(1) i d(on) 1av ds =25v, v gs =10v static drain-source on-state resistance (1) r ds(on) 2.5 5 w w v gs =10v, i d =500ma v gs =5v, i d =200ma forward transconductance(1)(2 ) g fs 150 ms v ds =25v, i d =250ma input capacitance (2) c iss 35 pf common source output capacitance (2) c oss 25 pf v ds =25v, v gs =0v, f=1mhz reverse transfer capacitance (2) c rss 8pf turn-on delay time (2)(3) t d(on) 5ns v dd ? 25v, i d =150ma rise time (2)(3) t r 7ns turn-off delay time (2)(3) t d(off) 6ns fall time (2)(3) t f 8ns (1) measured under pulsed conditions. width=300 m s. duty cycle 2% (2) sample test. (3) switching times measured with 50 0w source impedance and <5ns rise time on a pulse generator spice parameter data is available upon request for this device ZVN4106F ZVN4106F 3 - 400 3 - 399 d g s 04 10 -50 50 150 0 30 60 0 1.8 2.0 1.0 0 0.01 10 v ds - drain source voltage (v) saturation characteristics 0 2 4 i d - drain current (a) i d =0.5a normalised r ds(on) and v gs(th) 1.8 0 t j - junction temperature ( c) normalised r ds(on) & v gs(th) v temperature c oss c rss c - capacitance (pf) 80 40 c iss 0 v ds - drain source voltage (v) capacitance v drain source voltage r ds(on) - drain source on resistance ( w ) 100 10 1 i d - drain current (a) on-resistance v drain current gfs - transconductance (s) 300 0 i d(on) - drain current (a) transconductance v drain current v gs - gate source voltage (v) 16 8 0 q - charge (nc) gate source voltage v gate charge v gs =3.5v r ds(on) v ds =10v v gs(th) 3 1 268 v gs =20v 16v 14v 12v 10v 9v 8v 7v 6v 5v 4v 0.1 1 4v 5v 6v 8v 10v 14v 20v 0 100 0.6 1.2 100 200 0.5 1.5 15 45 20 60 4 12 0.6 1.2 i d =0.5a v dd =20v 40v 50v
sot23 n-channel enhancement mode vertical dmos fet issue 2 C december 1995 parmarking detail - mz absolute maximum ratings. parameter symbol value unit drain-source voltage v ds 60 v continuous drain current at t amb =25c i d 0.2 a pulsed drain current i dm 3a gate-source voltage v gs 20 v max power dissipation at t amb =25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. max. unit conditions. drain-source breakdown voltage bv dss 60 v i d =1ma, v gs =0v gate-source threshold voltage v gs(th) 1.3 3 v i d =1ma, v ds = v gs gate-body leakage i gss 100 na v gs = 20v, v ds =0v zero gate voltage drain current i dss 10 50 m a m a v ds =60v, v gs =0 v ds =48v, v gs =0v, t=125c (2) on-state drain current(1) i d(on) 1av ds =25v, v gs =10v static drain-source on-state resistance (1) r ds(on) 2.5 5 w w v gs =10v, i d =500ma v gs =5v, i d =200ma forward transconductance(1)(2 ) g fs 150 ms v ds =25v, i d =250ma input capacitance (2) c iss 35 pf common source output capacitance (2) c oss 25 pf v ds =25v, v gs =0v, f=1mhz reverse transfer capacitance (2) c rss 8pf turn-on delay time (2)(3) t d(on) 5ns v dd ? 25v, i d =150ma rise time (2)(3) t r 7ns turn-off delay time (2)(3) t d(off) 6ns fall time (2)(3) t f 8ns (1) measured under pulsed conditions. width=300 m s. duty cycle 2% (2) sample test. (3) switching times measured with 50 0w source impedance and <5ns rise time on a pulse generator spice parameter data is available upon request for this device ZVN4106F ZVN4106F 3 - 400 3 - 399 d g s 04 10 -50 50 150 0 30 60 0 1.8 2.0 1.0 0 0.01 10 v ds - drain source voltage (v) saturation characteristics 0 2 4 i d - drain current (a) i d =0.5a normalised r ds(on) and v gs(th) 1.8 0 t j - junction temperature ( c) normalised r ds(on) & v gs(th) v temperature c oss c rss c - capacitance (pf) 80 40 c iss 0 v ds - drain source voltage (v) capacitance v drain source voltage r ds(on) - drain source on resistance ( w ) 100 10 1 i d - drain current (a) on-resistance v drain current gfs - transconductance (s) 300 0 i d(on) - drain current (a) transconductance v drain current v gs - gate source voltage (v) 16 8 0 q - charge (nc) gate source voltage v gate charge v gs =3.5v r ds(on) v ds =10v v gs(th) 3 1 268 v gs =20v 16v 14v 12v 10v 9v 8v 7v 6v 5v 4v 0.1 1 4v 5v 6v 8v 10v 14v 20v 0 100 0.6 1.2 100 200 0.5 1.5 15 45 20 60 4 12 0.6 1.2 i d =0.5a v dd =20v 40v 50v
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