features trenchfet power mosfet ultra-low r ss(on) 4-kv esd protection applications battery protection circuitry - 1-2 cell li+/lip SI6876EDQ vishay siliconix new product document number: 71822 s-20802?rev. b, 01-jul-02 www.vishay.com 1 bi-directional n-channel 30-v (d-s) mosfet product summary v s1s2 (v) r s1s2(on) ( ? ) i s1s2 (a) 0.025 @ v gs = 10 v 6.2 30 0.030 @ v gs = 4.5 v 5.7 0.050 @ v gs = 2.5 v 4.5 SI6876EDQ s 1 s 1 s 1 g 1 1 2 3 4 8 7 6 5 s 2 s 2 s 2 g 2 tssop-8 top view g 2 s 2 g 1 s 1 n-channel r r absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 10 secs steady state unit source1?source2 voltage v s1s2 t 30 v gate-source voltage v gs 12 v continuous source1?source2 current t a = 25 c i s1s2 6.2 5.0 continuous source1?source2 current (t j = 150 c) a t a = 70 c i s1s2 5.0 4.0 a pulsed source1-source2 current i sm 30 maximum power dissipation a t a = 25 c p d 1.78 1.19 w maximum power dissipation a t a = 70 c p d 1.14 0.76 w operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit mi j ti tabit a t 10 sec. r 55 70 maximum junction-to-ambient a steady state r thja 85 105 c/w maximum junction-to-foot (source) a steady state r thjf 35 45 notes a. surface mounted on fr4 board. b. t 10 sec.
SI6876EDQ vishay siliconix new product www.vishay.com 2 document number: 71822 s-20802?rev. b, 01-jul-02 specifications (t j =25 c unless otherwise noted) parameter symbol test conditions min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.45 1.5 v gate body leakage i gss v ds = 0 v, v gs = 4.5 v 500 na gate-body leakage i gss v ds = 0 v, v gs = 12 v 10 ma zero gate voltage source current i s1s2 v ds = 24 v, v gs = 0 v 1 a zero gate voltage source current i s1s2 v ds = 24 v, v gs = 0 v, t j = 70 c 25 a on-state source current a i s(on) v ds 5 v, v gs = 4.5 v 20 a v gs = 10 v, i d = 6.2 a 0.020 0.025 source1-source2 on-state resistance a r s1s2(on) v gs = 4.5 v, i d = 5.7 a 0.024 0.030 s1s2(on) v gs = 2.5 v, i d = 4.5 a 0.037 0.050 forward transconductance a g fs v ds = 10 v, i d = 6.2 a 39 s dynamic b turn-on delay time t d(on) 1.3 2.5 rise time t r v dd = 15 v, r l = 15 3 6 s turn-off delay time t d(off) v dd = 15 v , r l = 15 i d 1 a, v gen = 10 v, r g = 6 10 20 s fall time t f 5.2 10 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. typical characteristics (25 c unless noted) 20 100 10,000 04 gate current vs. gate-source voltage 048121620 gate-current vs. gate-source voltage - gate current (ma) i gss v gs - gate-to-source voltage (v) - gate current ( i gss 0.01 0.1 1 10 1,000 v gs - gate-to-source voltage (v) a) t j = 150 c 812 8 6 4 2 0 16 t j = 25 c
SI6876EDQ vishay siliconix new product document number: 71822 s-20802?rev. b, 01-jul-02 www.vishay.com 3 typical characteristics (25 c unless noted) 0 6 12 18 24 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.000 0.014 0.028 0.042 0.056 0.070 0 5 10 15 20 25 30 0 6 12 18 24 30 012345 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 v gs = 10 thru 3 v 25 c t c = 125 c v gs = 10 v v gs = 2.5 v 2 v -55 c output characteristics transfer characteristics on-resistance vs. drain current v ds - drain-to-source voltage (v) - drain current (a) i d v gs - gate-to-source voltage (v) - drain current (a) i d - on-resistance ( r ds(on) ) i d - drain current (a) on-resistance vs. junction t emperature t j - junction temperature ( c) (normalized) - on-resistance ( r ds(on) ) v gs = 4.5 v 0.00 0.02 0.04 0.06 0.08 0.10 0246810 - 0.6 - 0.4 - 0.2 - 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 on-resistance vs. gate-to-source voltage threshold v oltage v gs - gate-to-source voltage (v) t j - temperature ( c) i s1s2 = 6.2 a i s1s2 = 250 a variance (v) v gs(th) - on-resistance ( r ds(on) )
SI6876EDQ vishay siliconix new product www.vishay.com 4 document number: 71822 s-20802?rev. b, 01-jul-02 typical characteristics (25 c unless noted) 10 -3 10 -2 1 10 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 85 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 10 -3 10 -2 110 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance single pulse power time (sec) power (w) 0.01 0 0.1 80 100 20 40 11030 60
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