symbol v ds v gs i dm i ar e ar t j , t stg symbol typ max r ja 45 60 r jc 0.45 0.56 repetitive avalanche energy l=0.3mh c 300 a mj junction and storage temperature range a p d c 268 134 -55 to 175 t c =100c avalanche current c 45 i d 80 78 200 pulsed drain current c power dissipation b t c =25c continuous drain current maximum units parameter t c =25c g t c =100c absolute maximum ratings t a =25c unless otherwise noted v v 25 gate-source voltage drain-source voltage 75 w maximum junction-to-case b steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a steady-state c/w AOT430 v ds (v) = 75v i d = 80 a (v gs = 10v) r ds(on) < 11.5m ? (v gs = 10v) the AOT430 uses advanced trench technology and design to provide excellent r ds(on) with low gate charge. this device is suitable for use in pwm, load switching and general purpose applications. standard product AOT430 is pb-free (meets rohs & sony 259 specifications). g d s t op view drain connected to tab g d s t o-220 www.freescale.net.cn 1/5 n-channel enhancement mode field effect transistor general description features
symbol min typ max units bv dss 75 v 1 t j =55c 5 i gss 1ua v gs(th) 2 2.7 4 v i d(on) 200 a 9.8 11.5 t j =125c 16.0 19.0 g fs transconductance 90 s v sd 0.7 1 v i s 80 a c iss 47 00 p f c oss 400 pf c rss 180 p f r g 3 ? q g (10v) 114 nc q gs 33 nc q gd 18 nc t d(on) 21 ns t r 39 ns t d(off) 70 ns t f 24 ns t rr 53 ns q rr 143 nc body diode reverse recovery charge i f =30a, di/dt=100a/ s maximum body-diode continuous current g input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =10v, v ds =30v, r l =1 ? , r gen =3 ? gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =30v, i d =30a gate source charge gate drain charge m ? i s =1a, v gs =0v v ds =5v, i d =80a diode forward voltage static drain-source on-resistance r ds(on) i dss a gate threshold voltage v ds =v gs , i d =250 a v ds =60v, v gs =0v v ds =0v, v gs =25v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time drain-source breakdown voltage on state drain current i d =250ua, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =30a reverse transfer capacitance i f =30a, di/dt=100a/ s v gs =0v, v ds =30v, f=1mhz switching parameters a : the value of r ja is measured with the device in a still air environment with t a =25c. b. the power dissipation p d is based on t j(max) =175c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c: repetitive rating, pulse width limited by junction temperature t j(max) =175c. d. the r ja is the sum of the thermal impedence from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsi nk, assuming a maximum junction temperature of t j(max) =175c. g. the maximum current rating is limited by bond-wires. rev 2 : feb 200 7 www.freescale.net.cn 2/5 AOT430 n-channel enhancement mode field effect transistor
typical electrical and thermal characteristic s 0 20 40 60 80 100 3 3.5 4 4.5 5 5.5 6 v gs (volts) figure 2: transfer characteristics i d (a) 6 7 8 9 10 11 12 13 0 20406080100 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c -40c 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50 -25 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v, 30a 0 5 10 15 20 25 30 4 8 12 16 20 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =10v i d =30a 25c 125c 0 50 100 150 200 250 0246810 v ds (volts) figure 1: on-region characteristics i d (a) v gs =4.5v 6v 10v 8v -40c 5.5v www.freescale.net.cn 3/5 AOT430 n-channel enhancement mode field effect transistor
typical electrical and thermal characteristic s 0 2 4 6 8 10 0 40 80 120 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 2 4 6 8 0 15304560 v ds (volts) figure 8: capacitance characteristics capacitance (nf) c iss 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z jc normalized transient thermal resistance c oss c rss v ds =30v i d =30a single pulse d=t on /t t j,pk =t c +p dm .z jc .r jc r jc =0.45c/w t o n t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0 25 50 75 100 125 150 0.000001 0.00001 0.0001 0.001 time in avalanche, t a (s) figure 10: single pulse avalanche capability i d (a), peak avalanche current t a =150c 0.1 1 10 100 1000 0.1 1 10 100 1000 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 s 10ms 1ms dc r ds(on) limited t j(max) =175c, t c =25c t a =25c www.freescale.net.cn 4/5 AOT430 n-channel enhancement mode field effect transistor
typical electrical and thermal characteristic s 0 50 100 150 200 250 300 0 25 50 75 100 125 150 175 t case (c) figure 13: power de-rating (note b) power dissipation (w) 0 20 40 60 80 100 0 25 50 75 100 125 150 175 t case (c) figure 12: current de-rating (note b) current rating i d (a) www.freescale.net.cn 5/5 AOT430 n-channel enhancement mode field effect transistor
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