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savantic semiconductor product specification silicon npn power transistors 2SC2681 d escription with to-3pfa package complement to type 2sa1141 high transition frequency applications audio frequency power amplifier high frequency power amplifier pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 115 v v ceo collector-emitter voltage open base 115 v v ebo emitter-base voltage open collector 5 v i c collector current 10 a i cm collector current-peak 15 a t c =25 100 p c collector power dissipation t a =25 2 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon npn power transistors 2SC2681 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v cesat collector-emitter saturation voltage i c =4.5a ;i b =0.45a 0.6 1.5 v v be base-emitter on voltage i c =4.5a ; v ce =2v 1.2 2.0 v i cbo collector cut-off current v cb =80v; i e =0 50 a i ebo emitter cut-off current v eb =5v; i c =0 50 a h fe -1 dc current gain i c =1a ; v ce =2v 60 200 h fe -2 dc current gain i c =4.5a ; v ce =2v 40 c ob output capacitance i e =0 ; v cb =10v;f=1mhz 230 pf f t transition frequency i c =1a ; v ce =2v 80 mhz h fe-1 classifications r q 60-120 100-200
savantic semiconductor product specification 3 silicon npn power transistors 2SC2681 package outline fig.2 outline dimensions (unindicated tolerance:0.30mm)

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