savantic semiconductor product specification silicon npn power transistors 2SC4531 d escription with to-3p(h)is package high voltage,high speed low saturation voltage bult-in damper diode applications horizontal deflection output applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 600 v v ebo emitter-base voltage open collector 5 v i c collector current 10 a i cm collector current-peak 20 a i b base current 5 a p c total power dissipation t c =25 50 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3p(h)is) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC4531 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ebo emitter-base breakdown voltage i e =200ma ;i c =0 5 v v cesat collector-emitter saturation voltage i c =7a; i b =1.7a 5 v v besat base-emitter saturation voltage i c =7a; i b =1.7a 1.5 v i cbo collector cut-off current v cb =500v; i e =0 10 a i ebo emitter cut-off current v eb =5v; i c =0 66 100 200 ma h fe dc current gain i c =1a ; v ce =5v 8 c ob collector output capacitance i e =0 ; v cb =10v,f=1mhz 210 pf v f diode forward voltage i f =7a 1.5 1.8 v f t transition frequency i c =0.1a ; v ce =10v 1 3 mhz switching times resistive load t s storage time 1.8 2.5 s t f fall time i cp =7a;i b1 =1.4a i b2 =-2.8a; r l =28.5 a 0.1 0.2 s
savantic semiconductor product specification 3 silicon npn power transistors 2SC4531 package outline fig.2 outline dimensions (unindicated tolerance: 0.20 mm)
savantic semiconductor product specification 4 silicon npn power transistors 2SC4531
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