symbol 10 sec steady state v ds v gs 5 3.8 3.8 3 i dm 1.3 0.8 0.8 0.5 t j , t stg paramete r symbol typ max t 10s 76 95 steady state 118 150 steady state r jl 54 68 pulsed drain current b continuous drain current a power dissipation a t a =25c junction and storage temperature range t a =70c units parameter t a =25c t a =70c v v i d gate-source voltage drain-source voltage 20 absolute maximum ratings t a =25c unless otherwise noted maximum junction-to-lead c c/w thermal characteristics units maximum junction-to-ambient a c/w maximum junction-to-ambient a 12 c/w r ja c -55 to 150 25 a p d w AO6806 dual n-channel enhancement mode field effect transistor features v ds = 20v i d = 5.0a (v gs = 4.5v) r ds(on) < 33m ? (v gs = 4.5v) r ds(on) < 34m ? (v gs = 4.0v) r ds(on) < 36m ? (v gs = 3.1v) r ds(on) < 40m ? (v gs = 2.5v) general description the AO6806 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 2.5v. this devic e is suitable for use as a load switch or in pwm applications. AO6806 is pb-free (meets rohs & sony 259 specifications). d1 / d2 tsop6 to p view s2 d1/d2 s1 g2 g1 1 2 3 6 5 4 d1 s1 d2 g1 2.7 k ? s2 g2 2.7 k ? alpha & omega semiconductor, ltd. www.aosmd.com
AO6806 symbol min typ max units bv dss 20 v 1 t j = 55c 5 i gss 10 ? ? ? k ? q g (4.5v) 5.6 7.5 nc q gs 0.85 nc q gd 1.7 nc t d(on) 172 ns t r 368 ns t d(off) 2.94 s drain-source breakdown voltage on state drain current i d = 250 a, v gs = 0v v gs = 4.5v, v ds = 5v v gs = 4.5v, i d = 5.0a reverse transfer capacitance i f =5a, di/dt=100a/ s electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss a gate threshold voltage v ds = v gs i d = 250 a v ds = 20v, v gs = 0v v ds = 0v, v gs = 10v zero gate voltage drain current gate-body leakage current r ds(on) static drain-source on-resistance forward transconductance diode forward voltage m ? v gs = 2.5v, i d = 4.0a i s = 1a,v gs = 0v v ds = 5v, i d = 5.0a v gs = 4.0v, i d = 4.5a v gs = 3.1v, i d = 4.5a switching parameters total gate charge gate source charge gate drain charge v gs = 4.5v, v ds = 10v, i d = 5a turn-on rise time turn-off delaytime v gs =10v, v ds =10v, r l =2.0 ? , r gen =3 ? turn-off fall time turn-on delaytime dynamic parameters maximum body-diode continuous current gate resistance v gs =0v, v ds =0v, f=1mhz v gs =0v, v ds =10v, f=1mhz input capacitance output capacitance a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a = 25c. in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using < 300 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev0: nov 2007 alpha & omega semiconductor, ltd. www.aosmd.com
AO6806 typical electrical and thermal characteristic s i f =-6.5a, di/dt=100a/ s this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arisin g out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 0 5 10 15 20 25 012345 v ds (volts) figure 1: on-region characteristics i d (a) 3v 4.5v 2v 1.8v 0 5 10 15 20 25 0 0.5 1 1.5 2 2.5 3 v gs (volts) figure 2: transfer characteristics i d (a) 25c 125c v ds = 5v -40c 26 28 30 32 34 36 0246810 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) v gs = 4.5v v gs = 2.5v v gs = 3.1v v gs = 4.0v 1e-06 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c -40c 0.6 0.8 1.0 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance 10 20 30 40 50 60 70 80 12345678910 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) i d = 5.0a 25c 125c -40c v gs =1.5v v gs = 4.5v i d = 5a 2.5v alpha & omega semiconductor, ltd. www.aosmd.com
AO6806 typical electrical and thermal characteristic s i f =-6.5a, di/dt=100a/ s this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arisin g out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 0 1 2 3 4 5 01234567 q g (nc) figure 7: gate-charge characteristics v gs (volts) 10 100 1000 0 5 10 15 20 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c r ss 0.1 1 10 100 1000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 10: single pulse power rating junction- to-ambient (note e) power (w) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance(note e) z ja normalized transient thermal resistance 0.01 0.1 1 10 100 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 ja .r ja r ja =118c/w t o n t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c alpha & omega semiconductor, ltd. www.aosmd.com
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