e l ek tr on isch e b a u e lemen te SMG3314 -1.9 a, -30 v ,r ds(on) 240m p-channel enhancement mode power mos.fet [ description and cost-effectiveness. combination of fast switching, low on-resistance the smg 3314 provide the designer with the best features total power dissipation linear derating factor operating junction and storage temperature range a b s o l u t e m a x i m u m r a t i n g s drain-source voltage gate-source voltage continuous drain current continuous drain current pulsed drain current parameter symbo l ratings unit t h e r m a l d a t a parameter symbo l ratings unit thermal resistance junction-ambient 3 a v v a a i d @t a =7 0 /w c w / c c w v ds v gs i d @t a =25 i dm p d @t a =25 tj, tstg rthj-a -30 20 - 1.9 - 1.5 -10 1.38 0.01 -55~+150 90 dim min max a 2.70 3.10 b 1. 4 0 1. 6 0 c 1.00 1.30 d 0.35 0.50 g 1.70 2. 1 0 h 0.00 0.10 j 0.10 0.26 k 0. 2 0 0. 6 0 l 0.85 1. 1 5 s 2. 40 2.8 0 all dimension in mm sc-59 3 3 1,2 o o c o c o c o o max. http://www.secosgmbh.com/ any changing of specification will not be informed individual s g d b l a 1 3 2 top view h c j k gate source drain d g s marking : 3314 * ultrahigh-speed switching * 4v drive 0 1 - j u n - 2 0 0 2 r e v . a p a g e 1 o f 4 * low on-resistance rohs compliant product free datasheet http:///
e l e c t r i c a l c h a r a c t e r i s t i c s ( t j = 2 5 c u n l e s s o t h e r w i s e s p e c i f i e d ) t o t a l g a t e c h a r g e - 0 . 1 - 1 . 0 1 0 0 - 1 - 1 0 2 4 0 4 6 0 6 . 2 1 . 4 0 . 3 7 . 6 8 . 2 1 7 . 5 9 2 3 0 1 3 0 . 4 4 0 v / v n a u a u a m n c n s p f [ v g s = 0 v v d s = - 1 5 v f = 1 . 0 m h z v d s = - 1 5 v i d = - 1 a v g s = - 1 0 v r g = 6 r d = 1 5 [ [ i d = - 1 . 7 a v d s = - 1 5 v v g s = - 1 0 v v g s = - 1 0 v , i d = - 1 . 7 a v g s = - 4 . 5 v , i d = - 1 . 3 a v g s = 2 0 v v d s = - 3 0 v , v g s = 0 v d s = - 3 0 v , v g s = 0 v d s = v g s , i d = - 2 5 0 u a r e f e r e n c e t o 2 5 , i d = - 1 m a _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ s 2 v d s = - 1 0 v , i d = - 1 . 7 a _ _ _ c o c o 5 0 0 _ _ v g s = - 4 . 0 v , i d = - 0 . 4 a r d s ( o n ) p a r a m e t e r s y m b o l m a x . t y p . t e s t c o n d i t i o n m i n . u n i t d r a i n - s o u r c e b r e a k d o w n v o l t a g e b r e a k d o w n v o l t a g e t e m p . c o e f f i c i e n t g a t e t h re s h o l d vo l t a g e g a t e - s o u r c e l e a k a g e c u r r e n t d r a i n - s o u r c e l e a k a g e c u r r e n t ( t j = 2 5 ) s t a t i c d r a i n -s o u r c e o n - r e s i s t a n c e d r a i n - s o u r c e l e a k a g e c u r r e n t ( t j = 7 0 ) g a t e - s o u r c e c h a r g e g a t e - d r a i n ( " m i l l e r " ) c h a r g e t u r n - o n d e l a y t i m e r i s e t i m e t u r n - o f f d e l a y t i m e f a l l t i m e i n p u t c a p a c i t a n c e o u t p u t c a p a c i t a n c e r e v e r s e t r a n s f e r c a p a c i t a n c e b v d s s b v d s / t j v g s ( t h ) i g s s i d s s c r s s q g q g s q g d t d ( o n ) t d ( o f f ) t r c i s s c o s s t f - 3 0 v v g s = 0 v , i d = - 2 5 0 u a _ _ 2 f o r w a r d t r a n s c o n d u c t a n c e g f s 2 2 o c o c o _ v g s = - 1 0 v , i d = - 0 . 8 a 2 7 0 _ _ s o u r c e - d r a i n d i o d e _ _ p a r a m e t e r s y m b o l m a x . t y p . t e s t c o n d i t i o n m i n . u n i t f o r w a r d o n v o l t a g e v s d _ _ i s = - 1 . 25 a , v g s = 0 v . v - 1 . 2 pulsed source current (body diode) v d =v g =0v,v s =-1.2v -1 -6.4 continuous source current (body diode) i sm i s _ _ _ _ a a 2 1 h t t p : / / w w w . s e c o s g m b h . c o m / a n y c h a n g i n g o f s p e c i f i c a t i o n w i l l n o t b e i n f o r m e d i n d i v i d u a l notes: 1.pulse width limited by max. junction temperature. 2.pulse width 300us, dutycycle 2%. 3.surface mounted on 1 inch 2 copper pad of fr4 board; 270 when mounted on min. copper pad. c/w ?? ?? 0 1 - j u n - 2 0 0 2 r e v . a p a g e 2 o f 4 e l e k t r o n i s c h e b a u e l e m e n t e s m g 3 3 1 4 - 1 . 9 a , - 3 0 v , r d s ( o n ) 2 4 0 m p - c h a n n e l e n h a n c e m e n t m o d e p o w e r m o s . f e t [
01-jun-2002 rev. a page 3 of 4 c h a r a c t e r i s t i c s c u r v e http://www.secosgmbh.com/ any changing of specification will not be informed individual 1 . 3 5 e l ek tr on isch e b a u e lemen te smg3 314 - 1 . 9 a, -30 v ,r ds(on) 240 m p-channel enhancement mode power mos.fet [
01-jun-2002 rev. a page 4 of 4 http://www.secosgmbh.com/ any changing of specification will not be informed individual e l ek tr on isch e b a u e lemen te smg3 314 - 1 . 9 a, -30 v ,r ds(on) 240 m p-channel enhancement mode power mos.fet [
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