1/3 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.12 - rev.a 4v drive nch+pch mosfet SH8M24 ? structure ? dimensions (unit : mm) silicon n-channel / p-channel mosfet ? features 1) low on-resistance. 2) built-in g-s protection diode. 3) small surface mount package (sop8). ? application switching ? packaging specifications ? inner circuit package code taping basic ordering unit (pieces) SH8M24 tb 2500 type ? absolute maximum ratings (ta=25 ? c) parameter v dss symbol v gss i d i dp i s i sp p d c tch 150 c tstg ? 55 to + 150 tr1 : n-ch tr2 : p-ch limits unit ? 1 pw 10 s, duty cycle 1% ? 2 mounted on a ceramic board. drain-source voltage gate-source voltage drain current total power dissipation channel temperature storage temperature continuous pulsed continuous source current (body diode) pulsed ? 1 v 45 v a a a a w / tota l ? 2 ? 1 20 4.5 18 1.0 18 2.0 w / elemen t 1.4 ? 45 20 3.5 14 ? 1.0 ? 14 (1) tr1 source (2) tr1 gate (3) tr2 source (4) tr2 gate (5) tr2 drain (6) tr2 drain (7) tr1 drain (8) tr1 drain ? 1 esd protection diode ? 2 body diode ? 2 ? 1 (8) (7) (1) (2) ? 2 ? 1 (6) (5) (3) (4) each lead has same dimensions sop8 free datasheet http:///
2/3 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.12 - rev.a data sheet SH8M24 n-ch ? electrical characteristics (ta=25 ? c) parameter symbol i gss y fs min. ?? 10 av gs = 20v, v ds =0v v dd 25v, v gs = 5v typ. max. unit conditions gate-source leakage v (br) dss 45 ?? vi d = 1ma, v gs =0v drain-source breakdown voltage i dss ?? 1 av ds = 45v, v gs =0v zero gate voltage drain current v gs (th) 1.0 ? 2.5 v v ds = 10v, i d = 1ma gate threshold voltage ? 33 46 i d = 4.5a, v gs = 10v static drain-source on-state resistance r ds (on) ? 41 57 m m m i d = 4.5a, v gs = 4.5v forward transfer admittance ? 46 64 i d = 4.5a, v gs = 4v input capacitance 3.5 ?? sv ds = 10v, i d = 4.5a output capacitance c iss ? 550 ? pf v ds = 10v reverse transfer capacitance c oss ? 140 70 ? pf v gs = 0v turn-on delay time c rss ? 12 ? pf f=1mhz rise time t d (on) ? 18 ? ns turn-off delay time t r ? 42 ? ns fall time t d (off) ? 12 ? ns t f ? 6.8 ? ns q g ? 2.0 9.6 nc q gs ? 2.9 ? nc i d = 4.5a q gd ?? nc r l = 5.6 , r g = 10 ? pulsed ? ? ? ? ? ? ? ? ? total gate charge gate-source charge gate-drain charge v dd 25 v i d = 2.5a v gs = 10v r l = 10 r g = 10 ? body diode characteristics (source-drain) (ta=25 ? c) v sd ?? 1.2 v i s = 4.5a, v gs =0v forward voltage parameter symbol min. typ. max. unit conditions ? ? pulsed
3/3 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.12 - rev.a data sheet SH8M24 p-ch ? electrical characteristics (ta=25 ? c) parameter symbol i gss y fs min. ?? 10 av gs = 20v, v ds =0v v dd ? 25v, v gs = ? 5v typ. max. unit conditions gate-source leakage v (br) dss ? 45 ?? vi d = ? 1ma, v gs =0v drain-source breakdown voltage i dss ??? 1 av ds = ? 45v, v gs =0v zero gate voltage drain current v gs (th) ? 1.0 ?? 2.5 v v ds = ? 10v, i d = ? 1ma gate threshold voltage ? 45 63 i d = ? 3.5a, v gs = ? 10v static drain-source on-state resistance r ds (on) ? 60 84 m m m i d = ? 3.5a, v gs = ? 4.5v forward transfer admittance ? 66 92 i d = ? 3.5a, v gs = ? 4v input capacitance 4.5 ?? sv ds = ? 10v, i d = ? 3.5a output capacitance c iss ? 1700 ? pf v ds = ? 10v reverse transfer capacitance c oss ? 200 135 ? pf v gs =0v turn-on delay time c rss ? 16 ? pf f=1mhz rise time t d (on) ? 17 ? ns turn-off delay time t r ? 70 ? ns fall time t d (off) ? 14 ? ns t f ? 13.0 ? ns q g ? 3.6 18.2 nc q gs ? 4.7 ? nc i d = ? 3.5a q gd ?? nc r l = 7.1 , r g = 10 ? pulsed ? ? ? ? ? ? ? ? ? total gate charge gate-source charge gate-drain charge v dd ? 25 v i d = ? 2.0a v gs = ? 10v r l =12.5 r g =10 ? body diode characteristics (source-drain) (ta=25 ? c) v sd ??? 1.2 v i s = ? 3.5a, v gs =0v forward voltage parameter symbol min. typ. max. unit conditions ? ? pulsed
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