features trenchfet power mosfet ultra-low r ss(on) esd protected: 4000 v new micro foot chipscale packaging reduces footprint area profile (0.62 mm) and on-resistance per footprint area applications battery protection circuit - 1-2 cell li+/lip battery pack for portable devices SI8900EDB vishay siliconix document number: 71830 s-31916?rev. e, 15-sep-03 www.vishay.com 1 bi-directional n-channel 20-v (d-s) mosfet product summary v s1s2 (v) r s1s2(on) ( ) i s1s2 (a) 0.024 @ v gs = 4.5 v 7 20 0.026 @ v gs = 3.7 v 6.8 20 0.034 @ v gs = 2.5 v 5.0 0.040 @ v gs = 1.8 v 5.5 g 2 s 2 g 1 s 1 n-channel 4 k 4 k micro foot device marking: 8900e = p/n code xxx = date/lot traceability code s 2 s 2 s 2 s 2 6 7 bump side view g 2 g 1 5 4 8 9 s 1 s 1 3 10 s 1 s 1 2 1 backside view 8900e xxx pin 1 identifier absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 5 secs steady state unit source1?source2 voltage v s1s2 20 v gate-source voltage v gs 12 v continuous source1 ? source2 current (t j = 150 c) a t a = 25 c i s1s2 7 5.4 c on ti nuous s ource 1 ? s ource 2 c urren t (t j = 150 c) a t a = 85 c i s1s2 5.1 3.9 a pulsed source1?source2 current i sm 50 maximum power dissipation a t a = 25 c p d 1.8 1 w maximum power dissipation a t a = 85 c p d 0.9 0.5 w operating junction and storage temperature range t j , t stg - 55 to 150 package reflow conditions c vpr 215 c package reflow conditions c ir/convection 220 c thermal resistance ratings parameter symbol typical maximum unit maximum junction to ambient a t 5 sec r 55 70 maximum junction-to-ambient a steady state r thja 95 120 c/w maximum junction-to-foot b steady state r thjf 12 15 c/w notes a. surface mounted on 1? x 1? fr4 board. b. the foot is defined as the top surface of the package. c. refer to ipc/jedec (j-std-020a), no manual or hand soldering.
SI8900EDB vishay siliconix www.vishay.com 2 document number: 71830 s-31916?rev. e, 15-sep-03 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ss = v gs , i d = 1.1 ma 0.45 1.0 v gate body leakage i gss v ss = 0 v, v gs = 4.5 v 4 a gate-body leakage i gss v ss = 0 v, v gs = 12 v 10 ma zero gate voltage source current i s1s2 v ss = 16 v, v gs = 0 v 1 a zero gate voltage source current i s1s2 v ss = 16 v, v gs = 0 v, t j = 85 c 5 a on-state source current a i s(on) v ss = 5 v, v gs = 4.5 v 5 a v gs = 4.5 v, i ss = 1 a 0.020 0.024 source1 source2 on state resistance a r v gs = 3.7 v, i ss = 1 a 0.022 0.026 source1?source2 on-state resistance a r s1s2(on) v gs = 2.5 v, i ss = 1 a 0.026 0.034 v gs = 1.8 v, i ss = 1 a 0.032 0.040 forward transconductance a g fs v ss = 10 v, i ss = 1 a 31 s dynamic b turn-on delay time t d(on) 3 5 rise time t r v ss = 10 v, r l = 10 4.5 7 s turn-off delay time t d(off) v ss = 10 v , r l = 10 i ss 1 a, v gen = 4.5 v, r g = 6 55 85 s fall time t f 15 25 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. typical characteristics (25 c unless noted) 0.01 100 10,000 gate current vs. gate-source voltage 0 4 8 12 16 20 0 3 6 9 12 15 gate-current vs. gate-source voltage v gs - gate-to-source voltage (v) 0.1 1 10 1,000 v gs - gate-to-source voltage (v) - gate current ( i gss a) 0 369 15 t j = 25 c t j = 150 c - gate current (ma) i gss i gss @ 25 c (ma) 12
SI8900EDB vishay siliconix document number: 71830 s-31916?rev. e, 15-sep-03 www.vishay.com 3 typical characteristics (25 c unless noted) 0 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.00 0.01 0.02 0.03 0.04 0.05 0246810 0 2 4 6 8 10 01234 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 v gs = 5 thru 1.5 v 25 c t c = 125 c -55 c output characteristics transfer characteristics on-resistance vs. drain current v ds - drain-to-source voltage (v) - drain current (a) i d v gs - gate-to-source voltage (v) - drain current (a) i d - on-resistance ( r ds(on) ) i d - drain current (a) on-resistance vs. junction t emperature t j - junction temperature ( c) (normalized) - on-resistance ( r ds(on) ) 1 v 0.00 0.02 0.04 0.06 0.08 0.10 012345 on-resistance vs. gate -to-source v oltage - on-resistance ( r ds(on) ) v gs - gate-to-source voltage (v) - 0.4 - 0.3 - 0.2 - 0.1 - 0.0 0.1 0.2 - 50 - 25 0 25 50 75 100 125 150 threshold v oltage variance (v) v gs(th) t j - temperature ( c) v gs = 4.5 v v gs = 2.5 v v gs = 1.8 v v gs = 3.7 v v gs = 4.5 v i s1s2 = 1 a i s1s2 = 1 a i s1s2 = 5 a i s1s2 = 1.1 ma
SI8900EDB vishay siliconix www.vishay.com 4 document number: 71830 s-31916?rev. e, 15-sep-03 typical characteristics (25 c unless noted) 0 5 30 power (w) single pulse power, junction-to-ambient time (sec) 20 25 10 -3 10 -2 1 10 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 95 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 1 1000 10 0.1 0.01 15 10 -3 10 -2 1 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance 100 10
SI8900EDB vishay siliconix document number: 71830 s-31916?rev. e, 15-sep-03 www.vishay.com 5 package outline micro foot: 10?bump (2 x 5, 0.8?mm pitch) recommended land mark on backside of die e e 10 0.30 0.31 note 3 solder mask 0.40 8900e xxx b diamerter e d s 1 e e s 2 bump note 2 silicon a a 2 a 1 notes (unless otherwise specified): 1. laser mark on the silicon die back, coated with a thin metal. 2. bumps are eutectic solder 63/57 sn/pb. 3. non-solder mask defined copper landing pad. millimeters* inches dim min max min max a 0.600 0.650 0.0236 0.0256 a 1 0.260 0.290 0.102 0.0114 a 2 0.340 0.360 0.0134 0.0142 b 0.370 0.410 0.0146 0.0161 d 4.050 4.060 0.1594 0.1598 e 1.980 2.000 0.0780 0.0787 e 0.750 0.850 0.0295 0.0335 s 1 0.430 0.450 0.0169 0.0177 s 2 0.580 0.600 0.0228 0.0236 * use millimeters as the primary measurement.
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