SI4982DY vishay siliconix document number: 70748 s-03950?rev. b, 26-may-03 www.vishay.com 2-1 dual n-channel 100-v (d-s) mosfet product summary v ds (v) r ds(on) ( ) i d (a) 100 0.150 @ v gs = 10 v 2.6 100 0.180 @ v gs = 6 v 2.4 so-8 s 1 d 1 g 1 d 1 s 2 d 2 g 2 d 2 5 6 7 8 top view 2 3 4 1 d g s n-channel mosfet ordering information: SI4982DY SI4982DY-t1 (with t ape and reel) absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 100 v gate-source voltage v gs 20 v continuous drain current (t j = 150 c) a t a = 25 c i d 2.6 continuous drain current (t j = 150 c) a t a = 70 c i d 2.1 a pulsed drain current i dm 20 a continuous source current (diode conduction) a i s 1.7 maximum power dissipation a t a = 25 c p d 2.0 w maximum power dissipation a t a = 70 c p d 1.3 w operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol limit unit maximum junction-to-ambient a r thja 62.5 c/w notes a. surface mounted on fr4 board, t 10 sec.
SI4982DY vishay siliconix www.vishay.com 2-2 document number: 70748 s-03950?rev. b, 26-may-03 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ a max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 2 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 100 v, v gs = 0 v 1 a zero gate voltage drain current i dss v ds = 100 v, v gs = 0 v, t j = 55 c 20 a on-state drain curren b i d(on) v ds = 5 v, v gs = 10 v 15 a drain source on state resistance b r ds( ) v gs = 10 v, i d = 2.6 a 0.130 0.150 drain-source on-state resistance b r ds(on) v gs = 6 v, i d = 2.4 a 0.140 0.180 forward transconductance b g fs v ds = 15 v, i d = 2.6 a 11 s diode forward voltage b v sd i s = 1.7 a, v gs = 0 v 1.2 v dynamic a total gate charge q g 15 30 gate-source charge q gs v ds = 50 v, v gs = 10 v, i d = 2.6 a 2.7 nc gate-drain charge q gd 4.0 gate resistance r g 1 4.4 turn-on delay time t d(on) 10 20 rise time t r v dd = 50 v, r l = 50 10 20 turn-off delay time t d(off) v dd = 50 v , r l = 50 i d 1 a, v gen = 10 v, r g = 6 30 60 ns fall time t f 10 20 source-drain reverse recovery time t rr i f = 1.7 a, di/dt = 100 a/ s 60 90 notes a. for design aid only; not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2%.
SI4982DY vishay siliconix document number: 70748 s-03950?rev. b, 26-may-03 www.vishay.com 2-3 typical characteristics (25 c unless noted) 0 4 8 12 16 20 01234 0 4 8 12 16 20 0 7 14 21 28 0.0 0.5 1.0 1.5 2.0 2.5 - 50 - 25 0 25 50 75 100 125 150 0.00 0.05 0.10 0.15 0.20 0.25 048121620 0 300 600 900 1200 0 20406080100 0 4 8 12 16 20 0123456 output characteristics transfer characteristics gate charge on-resistance vs. drain current v ds - drain-to-source voltage (v) - drain current (a) i d v gs = 10 thru 6 v 5 v 4 v v gs - gate-to-source voltage (v) - drain current (a) i d t c = 125 c -55 c - gate-to-source voltage (v) q g - total gate charge (nc) v ds - drain-to-source voltage (v) c - capacitance (pf) v gs c oss c iss v ds = 50 v i d = 2.6 a - on-resistance ( r ds(on) ? ) i d - drain current (a) capacitance on-resistance vs. junction t emperature v gs = 10 v i d = 2.6 a t j - junction temperature ( c) (normalized) - on-resistance ( r ds(on) ? ) v gs = 10 v v gs = 6 v 25 c 3 v c rss
SI4982DY vishay siliconix www.vishay.com 2-4 document number: 70748 s-03950?rev. b, 26-may-03 typical characteristics (25 c unless noted) - 1.2 - 0.9 - 0.6 - 0.3 0.0 0.3 0.6 - 50 - 25 0 25 50 75 100 125 150 0 10 20 30 40 50 0.01 0.10 1.00 10.00 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0246810 source-drain diode forward v oltage on-resistance vs. gate-to-source voltage threshold v oltage single pulse power normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance - on-resistance ( r ds(on) ? ) v sd - source-to-drain voltage (v) v gs - gate-to-source voltage (v) - source current (a) i s t j - temperature ( c) time (sec) power (w) t j = 150 c t j = 25 c i d = 2.6 a i d = 250 a variance (v) v gs(th) 20 10 1 0 0.2 0.4 1.0 1.2 2 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 11030 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 1. duty cycle, d = 2. per unit base = r thja = 62.5 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 0.6 0.8
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
|
