AOT298L/aob298l/aotf298l v ds i d (at v gs =10v) 58a/33a r ds(on) (at v gs =10v) < 14.5m w symbol v ds v gs 2 0 the AOT298L & aob298l & aotf298l uses trench mosfet technology that is uniquely optimized to provide the most efficient high frequency switching performance. power losses are minimized due to an extremely low combination of r ds(on) and c rss . in addition, switching behavior is well controlled with a soft recovery body diode.this device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and led backlighting. v units parameter absolute maximum ratings t a =25c unless otherwise noted 100v AOT298L/aob298l aotf298l drain-source voltage 100 v gate-source voltage g d s v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r q jc power dissipation a 15 t c =100c power dissipation b p d 50 16 -55 to 175 junction and storage temperature range c/w c/w maximum junction-to-ambient a d 1.5 60 4.5 maximum junction-to-case a 2 0 w t c =25c w t a =70c 1.33 t a =25c 2.1 p dsm 100 33 20 33 41 26 130 thermal characteristics parameter AOT298L/aob298l aotf298l t a =25c i dsm a t a =70c i d pulsed drain current c continuous drain current v 9 58 20 gate-source voltage maximum junction-to-ambient a c/w r q ja 15 60 t c =25c t c =100c mj avalanche current c 7 a avalanche energy l=0.1mh c continuous drain current units c www.freescale.net.cn 1/7 100v n-channel mosfet general description features
symbol min typ max units bv dss 100 v v ds =100v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 2.7 3.3 4.1 v i d(on) 130 a 12 14.5 t j =125c 19 24 g fs 30 s v sd 0.7 1 v i s 70 a c iss 1250 1670 pf c oss 727 970 pf c rss 25 43 pf r g 2 3 w q g (10v) 19 27 nc q gs 5.5 nc q gd 6 nc t d(on) 7.5 ns t r 14 ns t d(off) 15 ns t f 14 ns gate-body leakage current v ds =v gs i d =250 m a v ds =0v, v gs =20v electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage i d =250 m a, v gs =0v i dss m a zero gate voltage drain current m w on state drain current v gs =10v, v ds =5v v gs =10v, i d =20a r ds(on) static drain-source on-resistance diode forward voltage maximum body-diode continuous current g input capacitance forward transconductance i s =1a,v gs =0v v ds =5v, i d =20a turn-on rise time turn-off delaytime v gs =10v, v ds =50v, r l =2.5 w , r gen =3 w gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time turn-on delaytime v gs =10v, v ds =50v, i d =20a total gate charge gate source charge gate drain charge reverse transfer capacitance v gs =0v, v ds =50v, f=1mhz output capacitance switching parameters dynamic parameters t f 14 ns t rr 39 ns q rr 140 nc turn-off fall time i f =20a, di/dt=500a/ m s body diode reverse recovery charge body diode reverse recovery time i f =20a, di/dt=500a/ m s a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environm ent with t a =25 c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design, and the maximum temperat ure of 175 c may be used if the pcb allows it. b. the power dissipation p d is based on t j(max) =175 c, using junction-to-case thermal resistance, and is more u seful in setting the upper dissipation limit for cases where additional heatsinking i s used. c. repetitive rating, pulse width limited by junction temperature t j(max) =175 c. ratings are based on low frequency and duty cycles to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedance from junction to case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtaine d using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =175 c. the soa curve provides a single pulse rating. g. the maximum current limited by package. h. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environm ent with t a =25 c. www.freescale.net.cn 2/7 AOT298L/aob298l/aotf298l 100v n-channel mosfet
typical electrical and thermal characteristics 17 5 2 10 0 18 0 20 40 60 80 100 2 3 4 5 6 7 8 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 8 10 12 14 16 18 20 0 5 10 15 20 25 30 r ds(on) (m w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0 25 50 75 100 125 150 175 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =10v i d =20a 25 c 125 c v ds =5v v gs =10v 0 20 40 60 80 100 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) 6v 7v 10v vgs=5v 40 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 8 16 24 32 40 5 6 7 8 9 10 r ds(on) (m w w w w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =20a 25 c 125 c www.freescale.net.cn 3/7 AOT298L/aob298l/aotf298l 100v n-channel mosfet
typical electrical and thermal characteristics 17 5 2 10 0 18 0 2 4 6 8 10 0 4 8 12 16 20 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 400 800 1200 1600 2000 0 20 40 60 80 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 200 400 600 800 0.0001 0.001 0.01 0.1 1 10 100 power (w) pulse width (s) figure 10: single pulse power rating junction-to-ca se c oss c rss v ds =50v i d =20a t j(max) =175 c t c =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 1000 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area for AOT298L and aob298l (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =175 c t c =25 c 100 m s 40 for AOT298L and aob298l (note f) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z q q q q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance for AOT298L and aob298l (note f) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse area for AOT298L and aob298l (note f) r q jc =1.5 c/w www.freescale.net.cn 4/7 AOT298L/aob298l/aotf298l 100v n-channel mosfet
typical electrical and thermal characteristics 17 5 2 10 0 18 40 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 1000 i d (amps) v ds (volts) figure 12: maximum forward biased safe operating area for aotf298l (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =175 c t c =25 c 100 m s 0 200 400 600 800 0.0001 0.001 0.01 0.1 1 10 100 power (w) pulse width (s) figure 13: single pulse power rating junction-to-ca se for aotf298l (note f) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z q q q q jc normalized transient thermal resistance pulse width (s) figure 14: normalized maximum transient thermal imp edance for aotf298l (note f) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =175 c t c =25 c r q jc =4.5 c/w 0 10 20 30 40 0 25 50 75 100 125 150 175 power dissipation (w) t case ( c) figure 16: power de-rating for aotf298l (note f) 0 10 20 30 40 50 0 25 50 75 100 125 150 175 current rating i d (a) t case ( c) figure 15: current de-rating for aotf298 (no te f) www.freescale.net.cn 5/7 AOT298L/aob298l/aotf298l 100v n-channel mosfet
typical electrical and thermal characteristics 17 5 2 10 0 18 0 30 60 90 120 0 25 50 75 100 125 150 175 power dissipation (w) t case (c) figure 18: power de-rating for AOT298L and aob298l (note f) 0 20 40 60 80 0 25 50 75 100 125 150 175 current rating i d (a) t case (c) figure 17: current de-rating for AOT298L and aob298l (note f) 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 20: single pulse power rating junction - to - t a =25 c 10 100 1 10 100 i ar (a) peak avalanche current time in avalanche, t a ( m mm m s) figure 19: single pulse avalanche capability t a =25 c t a =150 c t a =100 c t a =125 c 40 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 21: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse figure 20: single pulse power rating junction - to - ambient (note h) r q ja =60 c/w figure 19: single pulse avalanche capability (note c) www.freescale.net.cn 6/7 AOT298L/aob298l/aotf298l 100v n-channel mosfet
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar vdd vgs vgs rg dut - + vdc vgs id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr www.freescale.net.cn 7/7 AOT298L/aob298l/aotf298l 100v n-channel mosfet
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