sot-353 UMG3N general purpose transistors (dual transistors) features z two dtc143t chips in a package z mounting possible with sot-35 3 automatic mounting machines. z transistor elements are independ ent, eliminating interference. z mounting cost and area be cut in half. marking: g3 equivalent circuit absolute maximum ratings (ta=25 ) symbol parameter limits unit v cbo collector-base voltage 50 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 5 v i c collector current -continuous 100 ma p c collector dissipation 150 mw t j junction temperature 150 t stg storage temperature -55~+150 electrical characteristics (ta=25 unless otherwise specified) parameter symbol test conditions m in t yp max unit collector-base breakdown voltage v (br)cbo i c =50 a,i e =0 50 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 50 v emitter-base breakdown voltage v (br)ebo i e =50 a,i c =0 5 v collector cut-off current i cbo v cb =50v,i e =0 0.5 ua emitter cut-off current i ebo v eb =4v,i c =0 0.5 ua dc current gain h fe v ce =5v,i c =1ma 100 600 collector-emitter saturation voltage v ce(sat) i c =5ma,i b =0.25ma 0.3 v transition frequency f t v ce =10v,i e =-5ma, f=100mhz 250 mhz input resistor r 1 3.29 4.7 6.11 k ? 1 r 1 r 1 dtr 1 dtr 2 (3) (2) (1) (4) (5)/(6) www.htsemi.com semiconductor jinyu 1 date:2011/ 05
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