fjd5304d ? high voltage fast switching transistor ? 2010 fairchild semiconductor corporation www.fairchildsemi.com fjd5304d rev. a1 1 july 2010 fjd5304d high voltage fast switching transistor features ? built-in free wheeling diode ? wide safe operating area ? small variance in storage time ? suitable for electronic ballast application absolute maximum ratings t a = 25c unless otherwise noted * pulse test: pw = 300 s, duty cycle = 2% pulsed thermal characteristics t a = 25c unless otherwise noted ** device mounted on minimum pad size. symbol parameter value units v cbo collector-base voltage 700 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 12 v i c collector current (dc) 4 a i cp * collector current (pulse) 8 a i b base current (dc) 2 a i bp * base current (pulse) 4 a p c collector dissipation t c = 25 c t a = 25c 30 1.25 w w t j junction temperature 150 c t stg storage temperature -55 to 150 c symbol parameter value units r ja thermal resistance junction-ambient ** 99 c/w c b e equivalent circuit 1. base 2. collector 3. emitter d-pak 1
fjd5304d ? high voltage fast switching transistor ? 2010 fairchild semiconductor corporation www.fairchildsemi.com fjd5304d rev. a1 2 package marking and ordering information electrical characteristics t a = 25c unless otherwise noted device marking device package reel size tape width quantity j5304d fjd5304dtm d-pak 13? dia - 2500 j5304d fjd5304dtf d-pak 13? dia - 2000 symbol parameter conditions min. typ. max. units bv cbo collector-base breakdown voltage i c = 1ma, i e = 0 700 v bv ceo collector-emitter breakdown voltage i c = 5ma, i b = 0 400 v bv ebo emitter-base breakdown voltage i e = 1ma, i c = 0 12 v i ces collector cut-off current v cb = 700v, i e = 0 100 a i ceo collector cut-off current v cb = 400v, i b = 0 250 a i ebo emitter cut-off current v eb = 12v, i c = 0 1 ma h fe dc current gain v ce = 5v, i c = 10ma v ce = 5v, i c = 2.0a 10 840 v ce(sat) collector-emitter saturation voltage i c = 0.5a, i b = 0.1a 0.7 v i c = 1.0a, i b = 0.2a 1.0 v i c = 2.5a, i b = 0.5a 1.5 v v be(sat) base-emitter saturation voltage i c = 0.5a, i b = 0.1a 1.1 v i c = 1.0a, i b = 0.2a 1.2 v i c = 2.5a, i b = 0.5a 1.3 v t stg storage time v clamp =200v, i c =2.0a, i b1 =0.4a, v be (off)=-5v, l=200 h 0.6 s t f fall time 0.1 s t stg storage time v cc =250v, i c =2.0a, i b1 =0.4a, i b2 =-0.4a, t p =30 s 2.9 s t f fall time 0.2 s v f diode forward voltage i f = 2a 2.5 v
fjd5304d ? high voltage fast switching transistor ? 2010 fairchild semiconductor corporation www.fairchildsemi.com fjd5304d rev. a1 3 typical performance characteristics figure 1. static characteristic figure 2. dc current gain figure 3. collector-emitter saturation voltage figure 4. base-emitter saturation voltage figure 5. resistive load switching time figu re 6. forward biased safe operating area 024681012 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 i b =300ma i b =150ma i b =100ma i c [a], collector current v ce [v]. collector-emitter voltage i b =50ma 0.01 0.1 1 10 1 10 100 t c = - 25 o c t c =25 o c h fe , dc current gain i c [a], collector current t c =125 o c 0.01 0.1 1 10 0.01 0.1 1 10 t c = - 25 o c t c =25 o c t c =125 o c v ce (sat) [v], saturation voltage i c [a], collector current i c = 5 i b 0.01 0.1 1 10 0.1 1 10 t c = - 25 o c t c =25 o c t c =125 o c v be (sat) [v], saturation voltage i c [a], collector current i c = 5 i b 0.1 1 10 0.01 0.1 1 10 t f t stg & t f [ s], switching time i c [a], collector current v cc =250v i c = 5 i b1 = - 5 i b2 t stg 1 10 100 1000 0.01 0.1 1 10 100 1 s 10 s pulse i c_max i c [a], collector current v ce [v], collector-emitter voltage t c = 25 o c single pulse dc i c_max 1ms
fjd5304d ? high voltage fast switching transistor ? 2010 fairchild semiconductor corporation www.fairchildsemi.com fjd5304d rev. a1 4 typical performance characteristics (continued) figure 7. reverse biased safe operating area figure 8. power derating curve 0 100 200 300 400 500 600 700 800 900 1000 0 1 2 3 4 5 6 7 8 9 10 i c [a], collector current v ce [v], collector-emitter voltage vcc=50v, l = 1mh i b1 =1a, i b2 = -1a 0 25 50 75 100 125 150 0 20 40 p c [w], collector power dissipation t c [ o c], case temperature
fjd5304d ? high voltage fast switching transistor ? 2010 fairchild semiconductor corporation www.fairchildsemi.com fjd5304d rev. a1 5 mechanical dimensions dimensions in millimeters d-pak
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