NTE2996 mosfet n ? channel, enhancement mode high speed switch features: ultra low on ? resistance dynamic dv/dt rating +175 c operating temperature fast switching fully avalanche rated absolute maximum ratings: drain current, i d continuous (v gs = 10v) t c = +25 c (note 1) 84a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t c = +100 c 59a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . pulsed (note 2) 330a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . total power dissipation (t c = +25 c), p d 200w . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . derate above 25 c 1.4w/ c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . gate ? source voltage, v gs 20v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . single pulsed avalanche energy (i as = 50a, l = 260 h, note 3), e as 320mj . . . . . . . . . . . . . . . . . avalanche current (note 2), i ar 50a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . repetitive avalanche energy (note 2), e ar 17mj . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . peak diode recovery dv/dt (note 4), dv/dt 4.0v/ns . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . operating junction temperature range, t j ? 55 to +175 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . storage temperature range, t stg ? 55 to +175 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . maximum lead temperature (during soldering, 1.6mm from case, 10sec), t l +300 c . . . . . . . . . . maximum thermal resistance: junction ? to ? case, r thjc 0.75 c/w . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . junction ? to ? ambient, r thja 62 c/w . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . typical thermal resistance, case ? to ? sink (flat, greased surface), r thcs 0.50 c/w . . . . . . . . . . . . note 1. calculated continuous current based on maximum allowable junction temperature. package limitation current is 75a. note 2. repetitive rating: pulse width limited by maximum junction temperature. note 3. this is a calculated value limited to t j = +175 c. note 4. i sd 50a, di/dt 230a/ s, v dd v (br)dss , t j +175 c.
electrical characteristics: (t j = +25 c unless otherwise specified) parameter symbol test conditions min typ max unit drain ? source breakdown voltage bv dss v gs = 0v, i d = 250 a 60 ? ? v breakdown voltage temperature coefficient ? v (br)dss / ? t j reference to +25 c, i d = 1ma ? 0.064 ? v/ c static drain ? source on resistance r ds(on) v gs = 10v, i d = 50a, note 5 ? ? 12 ? gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.0 ? 4.0 v forward transconductance g fs v ds = 25v, i d = 50a, note 5 69 ? ? mhos drain ? to ? source leakage current i dss v ds = 60v, v gs = 0 ? ? 25 a v ds = 48v, v gs = 0v, t c = +150 c ? ? 250 a gate ? source leakage, forward i gss v gs = 20v ? ? 100 na gate ? source leakage, reverse v gs = ? 20v ? ? ? 100 na total gate charge q g v gs = 10v, i d = 50a, v ds = 48v ? ? 130 nc gate ? source charge q gs ? ? 28 nc gate ? drain (?miller?) charge q gd ? ? 44 nc turn ? on delay time t d(on) v dd = 30v , i d = 50a, r g = 3.6 ? , v 10v note 5 ? 12 ? ns rise time t r , v gs = 10v, note 5 ? 78 ? ns turn ? off delay time t d(off) ? 48 ? ns fall time t f ? 53 ? ns internal drain inductance l d between lead, 6mm (0.25?) from package and center of die contact ? 4.5 ? nh internal source inductance l s package and center of die contact ? 7.5 ? nh input capacitance c iss v gs = 0v, v ds = 25v, f = 1mhz ? 3210 ? pf output capacitance c oss ? 690 ? pf reverse transfer capacitance c rss ? 140 ? pf source ? drain diode ratings and characteristics continuous source current i s (body diode) note 6 ? ? 84 a pulse source current i sm (body diode) note 2 ? ? 330 a diode forward voltage v sd t j = +25 c, i s = 50a, v gs = 0v, note 5 ? ? 1.3 v reverse recovery time t rr t j = +25 c, i f = 50a, di/dt = 100a/ s, note 5 ? 73 110 ns reverse recovery charge q rr note 5 ? 220 330 c forward turn ? on time t on intrinsic turn ? on time is neglegible (turn ? on is dominated by l s + l d ) note 2. repetitive rating: pulse width limited by maximum junction temperature. note 5. pulse width 400 s, duty cycle 2%. note 6. calculated continuous current based on maximum allowable junction temperature. package limitation current is 75a.
.420 (10.67) max .500 (12.7) max .500 (12.7) min .250 (6.35) max .147 (3.75) dia max .070 (1.78) max .100 (2.54) gate drain/tab source .110 (2.79)
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