? 2013 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c - 150 v v dgr t j = 25 c to 150 c, r gs = 1m - 150 v v gss continuous 15 v v gsm transient 25 v i d25 t c = 25 c - 44 a i dm t c = 25 c, pulse width limited by t jm -130 a i a t c = 25 c - 22 a e as t c = 25 c1j p d t c = 25 c 298 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (to-220, to-247 & to-3p) 1.13/10 nm/lb.in. weight to-263 2.5 g to-220 3.0 g to-3p 5.5 g to-247 6.0 g ds100023b(01/13) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = - 250 a -150 v v gs(th) v ds = v gs , i d = - 250 a - 2.0 - 4.0 v i gss v gs = 15v, v ds = 0v 100 na i dss v ds = v dss , v gs = 0v - 15 a t j = 125 c - 750 a r ds(on) v gs = -10v, i d = 0.5 ? i d25 , note 1 65 m trenchp tm power mosfets p-channel enhancement mode avalanche rated IXTA44P15T ixtp44p15t ixtq44p15t ixth44p15t v dss = - 150v i d25 = - 44a r ds(on) 65 m features z international standard packages z avalanche rated z extended fbsoa z fast intrinsic diode z low r ds(on) and q g advantages z easy to mount z space savings z high power density applications z high-side switching z push pull amplifiers z dc choppers z automatic test equipment z current regulators z battery charger applications g d s to-220ab (ixtp) d (tab) g = gate d = drain s = source tab = drain to-247 (ixth) g s d d (tab) to-263 aa (ixta) g s d (tab) to-3p (ixtq) d g s tab
ixys reserves the right to change limits, test conditions, and dimensions. IXTA44P15T ixtp44p15t ixtq44p15t ixth44p15t ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t 300 s, duty cycle, d 2%. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = -10v, i d = 0.5 ? i d25 , note 1 27 45 s c iss 13.4 nf c oss v gs = 0v, v ds = - 25v, f = 1mhz 675 pf c rss 183 pf t d(on) 25 ns t r 42 ns t d(off) 50 ns t f 17 ns q g(on) 175 nc q gs v gs = -10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 65 nc q gd 58 nc r thjc 0.42 c/w r thcs to-220 0.50 c/w to-247 & to-3p 0.21 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v - 44 a i sm repetitive, pulse width limited by t jm -176 a v sd i f = i s , v gs = 0v, note 1 -1.3 v t rr 140 ns q rm 0.87 c i rm -12.4 a resistive switching times v gs = -10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 1 (external) i f = - 22a, -di/dt = -100a/ s v r = - 75v, v gs = 0v
? 2013 ixys corporation, all rights reserved IXTA44P15T ixtp44p15t ixtq44p15t ixth44p15t to-263 outline to-3p outline pins: 1 - gate 2,4 - drain 3 - source to-247 outline pins: 1 - gate 2 - drain 3 - source to-220 outline 1 = gate 2 = drain 3 = source
ixys reserves the right to change limits, test conditions, and dimensions. IXTA44P15T ixtp44p15t ixtq44p15t ixth44p15t fig. 1. output characteristics @ t j = 25oc -44 -36 -28 -20 -12 -4 -2.8 -2.4 -2 -1.6 -1.2 -0.8 -0.4 0 v ds - volts i d - amperes v gs = -10v - 8v - 7v - 5 v - 6 v fig. 2. extended output characteristics @ t j = 25oc -180 -160 -140 -120 -100 -80 -60 -40 -20 0 -30 -25 -20 -15 -10 -5 0 v ds - volts i d - amperes v gs = -10v - 9v - 8v - 5 v - 6 v - 7 v fig. 3. output characteristics @ t j = 125oc -44 -36 -28 -20 -12 -4 -5 -4.5 -4 -3.5 -3 -2.5 -2 -1.5 -1 -0.5 0 v ds - volts i d - amperes v gs = -10v - 8v - 7v - 6v - 5v fig. 4. r ds(on) normalized to i d = - 22a value vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = -10v i d = - 44a i d = -22a fig. 5. r ds(on) normalized to i d = - 22a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -140 -120 -100 -80 -60 -40 -20 0 i d - amperes r ds(on) - normalized v gs = -10v t j = 25oc t j = 125oc fig. 6. maximum drain current vs. case temperature -50 -40 -30 -20 -10 0 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
? 2013 ixys corporation, all rights reserved IXTA44P15T ixtp44p15t ixtq44p15t ixth44p15t fig. 7. input admittance -50 -40 -30 -20 -10 0 -6.0 -5.5 -5.0 -4.5 -4.0 -3.5 -3.0 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 10 20 30 40 50 60 70 -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode -140 -120 -100 -80 -60 -40 -20 0 -1.2 -1.1 -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 0 20 40 60 80 100 120 140 160 180 q g - nanocoulombs v gs - volts v ds = - 75v i d = - 22a i g = -1ma fig. 11. capacitance 100 1,000 10,000 100,000 -40 -35 -30 -25 -20 -15 -10 -5 0 v ds - volts capacitance - picofarads f = 1 mh z c iss c rss c oss fig. 12. forward-bias safe operating area 0.1 1 10 100 1000 1 10 100 1000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 25s 1ms 100s r ds(on) limit 10ms dc - - - - -- - 100ms - -
ixys reserves the right to change limits, test conditions, and dimensions. IXTA44P15T ixtp44p15t ixtq44p15t ixth44p15t fig. 14. resistive turn-on rise time vs. drain current 20 24 28 32 36 40 44 48 -44 -42 -40 -38 -36 -34 -32 -30 -28 -26 -24 -22 i d - amperes t r - nanoseconds r g = 1 ? , v gs = -10v v ds = - 75v t j = 25oc t j = 125oc fig. 15. resistive turn-on switching times vs. gate resistance 0 50 100 150 200 250 0 2 4 6 8 10 12 14 16 18 20 r g - ohms t r - nanoseconds 0 20 40 60 80 100 t d(on) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = -10v v ds = - 75v i d = - 44a, - 22a fig. 16. resistive turn-off switching times vs. junction temperature 15 16 17 18 19 20 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 40 45 50 55 60 65 t d(off) - nanoseconds t f t d(off) - - - - r g = 1 ? , v gs = -10v v ds = - 75v i d = - 22a i d = - 44a fig. 17. resistive turn-off switching times vs. drain current 40 45 50 55 60 65 -44 -42 -40 -38 -36 -34 -32 -30 -28 -26 -24 -22 i d - amperes t f - nanoseconds 14 15 16 17 18 19 t d(off) - nanoseconds t f t d(off) - - - - r g = 1 ? , v gs = -10v v ds = - 75v t j = 25oc t j = 125oc t j = 125oc t j = 25oc fig. 13. resistive turn-on rise time vs. junction temperature 18 22 26 30 34 38 42 46 50 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 1 ? , v gs = -10v v ds = - 75v i d = - 22a i d = - 44a fig. 18. resistive turn-off switching times vs. gate resistance 0 20 40 60 80 100 120 140 160 180 0 2 4 6 8 101214161820 r g - ohms t f - nanoseconds 30 60 90 120 150 180 210 240 270 300 t d(off) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = -10v v ds = - 75v i d = - 22a i d = - 44a
? 2013 ixys corporation, all rights reserved ixys ref: t_44p15t(a6)11-05-10-a IXTA44P15T ixtp44p15t ixtq44p15t ixth44p15t fig. 19. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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