? semiconductor components industries, llc, 2012 october, 2012 ? rev. 3 1 publication order number: nss60601mz4/d nss60601mz4, NSV60601MZ4T1G, nsv60601mz4t3g 60 v, 6.0 a, low v ce(sat) npn transistor on semiconductor?s e 2 poweredge family of low v ce(sat) transistors are surface mount devices featuring ultra low saturation voltage (v ce(sat) ) and high current gain capability. these are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. typical applications are dc ? dc converters and power management in portable and battery powered products such as cellular and cordless phones, pdas, computers, printers, digital cameras and mp3 players. other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. in the automotive industry they can be used in air bag deployment and in the instrument cluster. the high current gain allows e 2 poweredge devices to be driven directly from pmu?s control outputs, and the linear gain (beta) makes them ideal components in analog amplifiers. features ? nsv prefix for automotive and other applications requiring unique site and control change requirements; aec ? q101 qualified and ppap capable ? these devices are pb ? free, halogen free/bfr free and are rohs compliant* maximum ratings (t a = 25 c) rating symbol max unit collector-emitter voltage v ceo 60 vdc collector-base voltage v cbo 100 vdc emitter-base voltage v ebo 6.0 vdc collector current ? continuous i c 6.0 a collector current ? peak i cm 12.0 a stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. http://onsemi.com 60 volts, 6.0 amps 2.0 watts npn low v ce(sat) transistor equivalent r ds(on) 50 m sot ? 223 case 318e style 1 marking diagram schematic c 2, 4 b 1 e 3 pin assignment 1 60601 ayw a = assembly location y = year w = work week 60601 = specific device code = pb ? free package top view pinout c ce b 4 123 see detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ordering information
nss60601mz4, NSV60601MZ4T1G, nsv60601mz4t3g http://onsemi.com 2 thermal characteristics characteristic symbol max unit total device dissipation t a = 25 c derate above 25 c p d (note 1) 800 6.5 mw mw/ c thermal resistance, junction ? to ? ambient r ja (note 1) 155 c/w total device dissipation t a = 25 c derate above 25 c p d (note 2) 2 15.6 w mw/ c thermal resistance, junction ? to ? ambient r ja (note 2) 64 c/w total device dissipation (single pulse < 10 sec.) p dsingle (note 3) 710 mw junction and storage temperature range t j , t stg ? 55 to +150 c 1. fr ? 4 @ 7.6 mm 2 , 1 oz. copper traces. 2. fr ? 4 @ 645 mm 2 , 1 oz. copper traces. 3. thermal response. ordering information device package shipping ? nss60601mz4t1g sot ? 223 (pb ? free) 1,000 / tape & reel NSV60601MZ4T1G* sot ? 223 (pb ? free) 1,000 / tape & reel nss60601mz4t3g sot ? 223 (pb ? free) 4,000 / tape & reel nsv60601mz4t3g* sot ? 223 (pb ? free) 4,000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. *nsv prefix for automotive and other applications requiring unique site and control change requirements; aec ? q101 qualified and ppap capable.
nss60601mz4, NSV60601MZ4T1G, nsv60601mz4t3g http://onsemi.com 3 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ? emitter breakdown voltage (i c = 10 madc, i b = 0) v (br)ceo 60 ? ? vdc collector ? base breakdown voltage (i c = 0.1 madc, i e = 0) v (br)cbo 100 ? ? vdc emitter ? base breakdown voltage (i e = 0.1 madc, i c = 0) v (br)ebo 6.0 ? ? vdc collector cutoff current (v cb = 40 vdc, i e = 0) i cbo ? ? 0.1 adc emitter cutoff current (v eb = 6.0 vdc) i ebo ? ? 0.1 adc on characteristics dc current gain (note 4) (i c = 500 ma, v ce = 2.0 v) (i c = 1.0 a, v ce = 2.0 v) (i c = 2.0 a, v ce = 2.0 v) (i c = 6.0 a, v ce = 2.0 v) h fe 150 120 100 50 ? ? ? ? ? 360 ? ? ? collector ? emitter saturation voltage (note 4) (i c = 0.1 a, i b = 2.0 ma) (i c = 1.0 a, i b = 0.100 a) (i c = 2.0 a, i b = 0.200 a) (i c = 3.0 a, i b = 60 ma) (i c = 6.0 a, i b = 0.6 a) v ce(sat) ? ? ? ? ? ? 0.045 0.085 ? ? 0.040 0.060 0.100 0.220 0.300 v base ? emitter saturation voltage (note 4) (i c = 1.0 a, i b = 0.1 a) v be(sat) ? ? 0.900 v base ? emitter turn ? on voltage (note 4) (i c = 1.0 a, v ce = 2.0 v) v be(on) ? ? 0.900 v cutoff frequency (i c = 500 ma, v ce = 10 v, f = 1.0 mhz) f t 100 ? ? mhz input capacitance (v eb = 5.0 v, f = 1.0 mhz) cibo ? 400 ? pf output capacitance (v cb = 10 v, f = 1.0 mhz) cobo ? 37 ? pf switching characteristics delay (v cc = 30 v, i c = 750 ma, i b1 = 15 ma) t d ? 85 ? ns rise (v cc = 30 v, i c = 750 ma, i b1 = 15 ma) t r ? 115 ? ns storage (v cc = 30 v, i c = 750 ma, i b1 = 15 ma) t s ? 1350 ? ns fall (v cc = 30 v, i c = 750 ma, i b1 = 15 ma) t f ? 125 ? ns 4. pulsed condition: pulse width = 300 msec, duty cycle 2%. figure 1. power derating t j , temperature ( c) 150 100 75 50 25 0 0.5 1.0 1.5 2.0 2.5 p d , power dissipation (w) t c 125 t a
nss60601mz4, NSV60601MZ4T1G, nsv60601mz4t3g http://onsemi.com 4 typical characteristics 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 0 50 100 150 200 250 300 350 400 0.001 0.01 0.1 1 10 0 50 100 150 200 250 300 350 400 0.001 0.01 0.1 1 10 figure 2. dc current gain figure 3. dc current gain i c , collector current (a) i c , collector current (a) figure 4. collector ? emitter saturation voltage figure 5. collector ? emitter saturation voltage i c , collector current (a) i c , collector current (a) figure 6. collector saturation region figure 7. v be(on) voltage i b , base current (a) i c , collector current (a) h fe , dc current gain h fe , dc current gain v ce(sat) , collector ? emitter saturation voltage (v) v ce(sat) , collector ? emitter saturation voltage (v) v ce(sat) , collector ? emitter saturation voltage (v) v be(on) , emitter ? base voltage (v) v ce = 2 v 150 c ? 55 c 25 c v ce = 4 v 150 c ? 55 c 25 c i c /i b = 10 150 c ? 55 c 25 c v ce = 2 v 150 c ? 55 c 25 c i c = 6 a 0.1 a 1 a 0.5 a 0.01 0.1 1 0.001 0.01 0.1 1 10 i c /i b = 50 25 c 150 c ? 55 c 4 a 3 a 2 a 0 0.2 0.4 0.6 0.8 1 1.2 0.001 0.01 0.1 1 10
nss60601mz4, NSV60601MZ4T1G, nsv60601mz4t3g http://onsemi.com 5 typical characteristics 0 100 200 300 400 500 600 700 800 900 012345678 0 0.2 0.4 0.6 0.8 1 1.2 0.001 0.01 0.1 1 10 figure 8. base ? emitter saturation voltage figure 9. base ? emitter saturation voltage i c , collector current (a) figure 10. input capacitance figure 11. output capacitance v eb , emitter base voltage (v) v cb , collector base voltage (v) figure 12. current ? gain bandwidth product figure 13. safe operating area i c , collector current (a) v be(sat) , emitter ? base saturation voltage (v) c ibo , input capacitance (pf) c obo , output capacitance (pf) f ta u , current bandwidth product (mhz) i c /i b = 10 150 c ? 55 c 25 c i c , collector current (a) v be(sat) , emitter ? base saturation voltage (v) i c /i b = 50 150 c 25 c t j = 25 c f test = 1 mhz 0 0.2 0.4 0.6 0.8 1 1.2 0.001 0.01 0.1 1 1 0 ? 55 c 0 20 40 60 80 100 120 140 0 1020304050607080901 0 t j = 25 c f test = 1 mhz 1 10 100 1000 0.01 0.1 1 10 t a = 25 c v ce = 10 v 0.001 v ce , collector ? emitter voltage (v) i c , collector current (a) 0.5 ms 10 ms 100 ms 1 ms 0.01 0.1 1 10 100 1 10 100
nss60601mz4, NSV60601MZ4T1G, nsv60601mz4t3g http://onsemi.com 6 package dimensions sot ? 223 (to ? 261) case 318e ? 04 issue n a1 b1 d e b e e1 4 123 0.08 (0003) a l1 c notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inch. 1.5 0.059 mm inches scale 6:1 3.8 0.15 2.0 0.079 6.3 0.248 2.3 0.091 2.3 0.091 2.0 0.079 soldering footprint* h e dim a min nom max min millimeters 1.50 1.63 1.75 0.060 inches a1 0.02 0.06 0.10 0.001 b 0.60 0.75 0.89 0.024 b1 2.90 3.06 3.20 0.115 c 0.24 0.29 0.35 0.009 d 6.30 6.50 6.70 0.249 e 3.30 3.50 3.70 0.130 e 2.20 2.30 2.40 0.087 0.85 0.94 1.05 0.033 0.064 0.068 0.002 0.004 0.030 0.035 0.121 0.126 0.012 0.014 0.256 0.263 0.138 0.145 0.091 0.094 0.037 0.041 nom max l1 1.50 1.75 2.00 0.060 6.70 7.00 7.30 0.264 0.069 0.078 0.276 0.287 h e ? ? e1 0 1 0 0 1 0 l l 0.20 ??? ??? 0.008 ??? ??? style 1: pin 1. base 2. collector 3. emitter 4. collector *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 nss60601mz4/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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