general description the AAT8401 is a low threshold mosfet designed for the battery, cell phone, and pda markets. using analogictech??s ultra high density proprietary trenchdmos? technology, this product demon- strates high power handling and small size. applications ? battery packs ? cellular & cordless telephones ? battery-powered portable equipment features ?v ds(max) = -20v ?i d(max) 1 = -2.4a @ 25c ? low r ds(on) : ? 100 m ? @ v gs = -4.5v ? 175 m ? @ v gs = -2.5v sc59 package d gs top view 12 3 AAT8401 absolute maximum ratings (t a =25c unless otherwise noted) thermal characteristics symbol description value units r ja typical junction-to-ambient steady state 1 145 c/w r ja2 maximum junction-to-ambient t<5 seconds 1 125 c/w r jf typical junction-to-foot 1 50 c/w symbol description value units v ds drain-source voltage -20 v v gs gate-source voltage 12 i d continuous drain current @ t j =150c 1 t a = 25c 2.4 t a = 70c 2.0 a i dm pulsed drain current 2 9 i s continuous source current (source-drain diode) 1 -0.9 p d maximum power dissipation 1 t a = 25c 1.0 w t a = 70c 0.6 t j , t stg operating junction and storage temperature range -55 to 150 c smd type smd type smd type product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics (t j =25c unless otherwise noted) note 1: based on thermal dissipation from junction to ambient while mounted on a 1" x 1" pcb with optimized layout. a 5 second pulse on a 1" x 1" pcb approximates testing a device mounted on a large multi-layer pcb as in most applications. r jf + r fa = r ja where the foot thermal reference is defined as the normal solder mounting surface of the device's leads. r jf is guaranteed by design, howev- er r ca is determined by the pcb design. actual maximum continuous current is limited by the application's design. note 2: pulse test: pulse width = 300 s note 3: guaranteed by design. not subject to production testing. symbol description conditions min typ max units dc characteristics bv dss drain-source breakdown voltage v gs =0v, i d =-250a -20 v r ds(on) drain-source on-resistance 2 v gs =-4.5v, i d =-2.4a 88 100 m ? v gs =-2.5v, i d =-1.8a 146 175 i d(on) on-state drain current 2 v gs =-4.5v, v ds =-5v (pulsed) -9 a v gs(th) gate threshold voltage v gs =v ds , i d =-250a -0.6 v i gss gate-body leakage current v gs =12v, v ds =0v 100 na i dss drain source leakage current v gs =0v, v ds =-20v -1 a v gs =0v, v ds =-16v, t j =70c 3 -5 g fs forward transconductance 2 v ds =-5v, i d =-2.4a 4 s dynamic characteristics 3 q g total gate charge v ds =-15v, r d =5.6 ? , v gs =-4.5v 4 q gs gate-source charge v ds =-15v, r d =5.6 ? , v gs =-4.5v 0.6 nc q gd gate-drain charge v ds =-15v, r d =5.6 ? , v gs =-4.5v 1.4 t d(on) turn-on delay v ds =-15v, r d =5.6 ? , v gs =-4.5v, r g =6 ? 6.5 t r turn-on rise time v ds =-15v, r d =5.6 ? , v gs =-4.5v, r g =6 ? 13 ns t d(off) turn-off delay v ds =-15v, r d =5.6 ? , v gs =-4.5v, r g =6 ? 15 t f turn-off fall time v ds =-15v, r d =5.6 ? , v gs =-4.5v, r g =6 ? 20 source-drain diode characteristics v sd source-drain forward voltage 2 v gs =0, i s =-2.4a -1.3 v i s continuous diode current 1 -0.9 a AAT8401 smd type smd type smd type product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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