unisonic technologies co., ltd mmbta55 preliminary amplifier transistor www.unisonic.com.tw 1 of 3 copyright ? 2014 unisonic technologies co., ltd qw-r206-104.b pnp mmbt a 55 ? features * collector-emitter voltage: v ceo =60v ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 MMBTA55L-AE3-R mmbta55g-ae3-r sot-23 e b c tape reel mmbta55l-al3-r mmbta55g-al3-r sot-323 e b c tape reel note: pin assignment: e: emi tter, c: collector, b: base ? marking 6e l: lead free g: halogen free
mmbta55 preliminary amplifier transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r206-104.b ? absolute maximum rating (t a =25c, unless otherwise specified) parameter symbol ratings unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 60 v emitter-base voltage v ebo 4 v collector current - continuous i c 500 ma total device dissipation t a =25c p d 350 mw derate above 25c 2.8 mw/c junction temperature t j 125 c storage temperature t stg -40 ~ +150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol ratings unit junction to ambient ja 357 c/w note: r ? ja is measured with the device soldered into a typical printed circuit board. ? electrical characteristics (t a =25c, unless otherwise specified) parameter symbol test conditions min typ max uni t off characteristics collector-emitter breakdown voltage (note 1) v ( br ) ceo i c =1.0ma, i b =0 60 v emitter-base breakdown voltage v ( br ) ebo i e =100 ? a, ic=0 4 v collector cutoff current i ces v ce =60v, i b =0 0.1 a collector cutoff current i cbo v cb =60v, i e =0 0.1 a on characteristics dc current gain h fe i c =10ma, v ce =1v 100 i c =100ma, v ce =1v 100 collector-emitter sa turation voltage v ce ( sat ) i c =100ma, i b =10ma 0.25 v base-emitter on voltage v be ( on ) i c =100ma, v ce =1v 1.2 v small-signal characteristics current gain bandwidth product (note 2) f t i c =100ma, v ce =1v, f=100mhz 50 mhz note 1. pulse test: pw<=300 ? s, duty cycle<=2% 2. f t is defined as the frequency at which ihfei extrapolates to unity.
mmbta55 preliminary amplifier transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r206-104.b ? switching time test circuit figure 1. (note: total shunt capacitance of test jig and connectors for pnp test circuits, reverse all voltage polarities.) turn-on time 5.0s +10v 0 t r =3.0ns v in 5.0f 100 r b 100 -1.0v v cc +40v r l output s 6.0pf turn-off time 5.0s t r =3.0ns v in 5.0f 100 r b 100 +v bb v cc +40v r l output s 6.0pf utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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