cystech electronics corp. spec. no. : c582t8 issued date : 2013.07.25 revised date : 2013.09.03 page no. : 1/8 MTDN8810T8 cystek product specification dual n-channel enhancement mode mosfet MTDN8810T8 bv dss 20v i d 5a r dson @v gs =4.5v, i d =5a 17.5m (typ) r dson @v gs =2.5v,i d =2.6a 25m (typ) r dson @v gs =1.8v,i d =1a 41m (typ) description the MTDN8810T8 is a dual n-channel enhancement-mode mosfet, providing the designer with the best combination of fast switching, ruggedized device desi gn, low on-resistance and cost effectiveness and is suitable for applications such as pow er management of portable device. the tssop-8 package is universally preferred for a ll commercial-industrial surf ace mount applications. features ? 1.8v drive available ? low on-resistance ? fast switching speed ? pb-free lead plating package equivalent circuit MTDN8810T8 g gate s : source d : drain ordering information device package shipping marking MTDN8810T8 tssop-8 (pb-free lead plating package) 3000 pcs/ tape & reel 8810ts
cystech electronics corp. spec. no. : c582t8 issued date : 2013.07.25 revised date : 2013.09.03 page no. : 2/8 MTDN8810T8 cystek product specification absolute maximum ratings (ta=25 c) parameter symbol limits unit drain-source breakdown voltage bv dss 20 gate-source voltage v gs 8 v t a =25 c 5 continuous drain current (note 1) t a =70 c i d 4 pulsed drain current (note 2) i dm 20 a t a =25 c 1 total power dissipation (note 1) t a =70 c p d 0.64 w operating junction and storage temp erature range tj ; tstg -55~+150 c thermal resistance, junction-to-ambient (note 1) rth,ja 125 c/w note : 1.surface mounted on 1 in 2 copper pad of fr-4 board, t 10sec. the value in any given applic ation depends on the user?s specific board design. 2.pulse width 300 s, duty cycle 2% electrical characteristics (tj=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 20 - - v v gs =0, i d =250 a v gs(th) 0.4 0.75 1.0 v v ds =v gs , i d =250 a i gss - - 20 v gs =8v, v ds =0 - - 1 v ds =20v, v gs =0 i dss - - 25 a v ds =16v, v gs =0, tj=125 c - 17.5 28 i d =5a, v gs =4.5v - 25 40 i d =2.6a, v gs =2.5v *r ds(on) - 41 60 m i d =1a, v gs =1.8v *g fs - 10 - s v ds =5v, i d =5a dynamic ciss - 509 - coss - 100 - crss - 81 - pf v ds =10v, v gs =0, f=1mhz *t d(on) - 5 - *t r - 11 - *t d(off) - 22 - *t f - 18 - ns v dd =10v, i d =1a, v gs =4.5v, r g =6 *qg - 7 - *qgs - 0.9 - *qgd - 2.4 - nc v ds =10v, v gs =4.5v, i d =5a source drain diode *i s - - 5 *i sm - - 20 a *v sd - 0.77 1.2 v v gs =0v, i s =1.2a *trr - 14 - ns *qrr - 7 - nc i f =5a, di f /dt=100a/ s *pulse test : pulse width 300 s, duty cycle 2%
cystech electronics corp. spec. no. : c582t8 issued date : 2013.07.25 revised date : 2013.09.03 page no. : 3/8 MTDN8810T8 cystek product specification typical characteristics typical output characteristics 0 2 4 6 8 10 12 14 16 18 20 0246 8 static drain-source on-state resistance vs drain current 10 100 1000 10000 0.001 0.01 0.1 1 10 i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) vgs=1.5v vgs=1.8v vgs=2.5v vgs=4.5v vgs=10v v ds , drain-source voltage(v) i d , drain current(a) 5v 4.5v 4v 2.5v 2v v gs =1.5v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 024681 0 static drain-source on-state resistance vs gate-source voltage 0 10 20 30 40 50 60 70 80 90 100 024681 v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) 0 i d =5a i dr , reverse drain current (a) v sd , source-drain voltage(v) tj=25c tj=125c drain-source on-state resistance vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =4.5v, i d =5a r ds( on) @tj=25c : 17.5 m typ. maximum drain current vs junction temperature 0 1 2 3 4 5 6 25 50 75 100 125 150 175 tj, junction temperature(c) i d , maximum drain current(a) t a =25c, v gs =4.5v, r ja =125c/w
cystech electronics corp. spec. no. : c582t8 issued date : 2013.07.25 revised date : 2013.09.03 page no. : 4/8 MTDN8810T8 cystek product specification typical characteristics(cont.) capacitance vs drain-to-source voltage 10 100 1000 0.1 1 10 100 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss normalized threshold voltage vs junction tempearture 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) v gs( th) , normalizedthreshold voltage i d =250 a forward transfer admittance vs drain current 0.01 0.1 1 10 0.001 0.01 0.1 1 10 i d , drain current(a) g fs , forward transfer admittance-(s) v ds =5v pulsed ta=25c gate charge characteristics 0 1 2 3 4 5 012345678 qg, total gate charge(nc) v gs , gate-source voltage(v) v ds =10v i d =5a maximum safe operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-source voltage(v) i d , drain current (a) dc 10ms 100ms 1ms t a =25c, tj=150c v gs =4.5v, r ja =125c/w single pulse r ds( on) limite 10 s 100 s
cystech electronics corp. spec. no. : c582t8 issued date : 2013.07.25 revised date : 2013.09.03 page no. : 5/8 MTDN8810T8 cystek product specification typical characteristics(cont.) transient thermal response curves 0.01 0.1 1 10 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 t 1 , square wave pulse duration(s) r(t), normalized effective transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t c =p dm *r ja (t) 4.r ja =125c/w
cystech electronics corp. spec. no. : c582t8 issued date : 2013.07.25 revised date : 2013.09.03 page no. : 6/8 MTDN8810T8 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c582t8 issued date : 2013.07.25 revised date : 2013.09.03 page no. : 7/8 MTDN8810T8 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c582t8 issued date : 2013.07.25 revised date : 2013.09.03 page no. : 8/8 MTDN8810T8 cystek product specification tssop-8 dimension marking: date code device name 8810ts 8-lead tssop-8 plastic package cystek packa g e code: t8 *: typical millimeters inches millimeters inches dim min. max. min. max. dim min. max. min. max. a - 1.200 - 0.047 e 4.300 4.500 0.169 0.177 a1 0.020 0.150 0.001 0.006 e1 6.250 6.550 0.246 0.258 a2 0.800 1.000 0.031 0.039 e 0.650 (bsc) 0.026 (bsc) b 0.190 0.300 0.007 0.012 l 0.500 0.700 0.020 0.028 c 0.090 0.200 0.004 0.008 h 0.250* 0.010* d 2.900 3.100 0.114 0.122 1 7 1 7 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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