ACE7401B p - channel enhancement mode field effect transistor ver 1. 2 1 d escription the ACE7401B uses advanced trench technology to provide excellent r ds(on) , and ultra - low low gate charge with a 25v gate rating. this device is suitable for use as a load switch or in pwm applications. features ? v ds (v)= - 3 0v ? i d = - 29 a (v gs = - 10v) ? r ds(on) 13 m ( v gs = - 2 0 v ) ? r ds(on) 14 m ( v gs = - 10 v ) ? r ds(on) 1 7 m ( v gs = - 5 v ) absolute maximum ratings p arameter s ymbol m ax u nit drain - source voltage v ds s - 3 0 v gate - source voltage v gs s 25 v drain current (continuous) t a =25 o c i d - 29 a t a = 100 o c - 23 drain current (pulse) c i dm - 60 drain current (continuous) t a =25 o c i d sm - 12 t a = 75 o c - 9.7 power dissi pation b t a =25 o c p d 29 w t a = 100 o c 12 power dissi pation a t a =25 o c p d sm 3 .1 t a =70 o c 2 operating and storage temperature range t j , t stg - 55 to 150 o c thermal c ha racteristics parameter symbol typ max units maximum junction - to - ambient a t Q 10s r ja 30 40 o c /w maximum junction - to - ambient a d steady - state 60 75 maximum junction - to - lead steady - state r jl 3.5 4.2
ACE7401B p - channel enhancement mode field effect transistor ver 1.2 2 packaging type d f n 3 * 3 - 8 l ordering i nformation ACE7401B xx + h electrical characteristics t a =2 5 o c un less otherwise noted parameter symbol conditions min. typ. max. unit static drain - source brea kdown voltage v (br)dss v gs =0v, i d = - 250ua - 3 0 v zero gate voltage drain current i dss v ds = - 3 0 v, v gs =0v - 1 ua gate leakage current i gss v gs = 20 v, v ds =0v 100 na static drain - source on - resistance r ds(on) v gs = - 2 0 v, i d = - 1 0 a 8 . 2 1 3 m v gs = - 1 0 v, i d = - 1 0 a 9 . 2 1 4 v gs = - 5 v, i d = - 7 a 1 3 . 1 1 7 gate threshold voltage v gs(th) v ds =v gs , i d s = - 250 a - 1 . 5 - 1 . 8 - 3 v forward transconductance g fs v d s = - 5 v, i d = - 1 0 a 2 6 s diode forward voltage v sd i sd = - 1a, v gs =0v - 0.7 2 - 1 v maximum body - diode continuous current i s - 4 . 2 a switching total gate charge q g v ds = - 1 5 v, i d = - 1 2 a v gs = - 1 0 v 4 6 . 6 4 6 0 . 6 3 nc gate - source charge q gs 7 . 8 4 1 0 . 2 gate - drain charge q gd 9 . 9 6 1 2 . 9 5 turn - on delay time t d(on) v d s = - 1 5 v, r l = 1 . 25 , v g s = - 10 v , r g en = 3 19.24 38.48 ns turn - on rise time t f 8.56 17.12 n n : d f n 3 * 3 - 8 l pb - free halogen - free
ACE7401B p - channel enhancement mode field effect transistor ver 1.2 3 turn - off delay time t d(off) 69.8 139.6 turn - off fall time t f 18.52 37.04 dynamic input capacitance c iss v ds = - 15 v, v gs =0v f= 1m hz 2 7 7 7 . 9 6 pf output capacitance c oss 3 8 0 . 6 7 reverse transfer capacitance c rss 2 1 7 . 7 note: 1. the value of rqja is measured with the device mounted on 1in2 fr - 4 board with 2oz. copper, in a still air environment with t a =25c. the power dissipation p dsm is based on r qja t 10s value and the maximum allowed junction temperature of 150c. the value in any given application depends on the user's specific board design, and the maximum temperature of 150c may be used if the pcb allows it. 2. the power dissipation p d is based on t j(max) =150c, using junction - to - case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 3. repetitive rating, pulse width limited by junction temperature t j(max) =150c. ratings are based on low frequency and duty cycles to keep initial t j =25c. 4 . t he rqja is the sum of the thermal impedence from junction to case rqjc and case to ambient. 5 . the static characteristics in figures 1 to 6 are obtained using <300ms pulses, duty cycle 0 .5% max. 6 . these curves are based on the junction - to - case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150c. the soa curve provides a single pulse rating. 7 . the maxim um current rating is package limited. 8 . these tests are performed with the device mounted on 1in2 fr - 4 board with 2oz. copper, in a still air environment with t a =25c typical performance characteristics
ACE7401B p - channel enhancement mode field effect transistor ver 1.2 4 typical performance characteristics
ACE7401B p - channel enhancement mode field effect transistor ver 1.2 5 typical perfo rmance characteristics
ACE7401B p - channel enhancement mode field effect transistor ver 1.2 6 packing information dfn3 * 3 - 8 l unit: mm
ACE7401B p - channel enhancement mode field effect transistor ver 1.2 7 notes ace does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ace electronics co., ltd. as sued herein: 1. life support devices or systems are devices or syste ms which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a signi ficant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ace technology co., ltd. http://www.ace - ele.com/
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