? semiconductor components industries, llc, 2013 may, 2013 ? rev. 4 1 publication order number: mjb41c/d mjb41c, NJVMJB41CT4G (npn), mjb42c, njvmjb42ct4g (pnp) complementary silicon plastic power transistors d 2 pak for surface mount features ? lead formed for surface mount applications in plastic sleeves (no suffix) ? electrically the same as tip41 and t1p42 series ? njv prefix for automotive and other applications requiring unique site and control change requirements; aec ? q101 qualified and ppap capable ? pb ? free packages are available maximum ratings rating symbol value unit ???????????? ???????????? collector ? emitter voltage ??? ??? ???? ???? ??? ??? ???????????? ???????????? ? base voltage ??? ??? ???? ???? ??? ??? ???????????? ???????????? ? base voltage ??? ??? ???? ???? ??? ??? ???????????? ???????????? ? continuous ? peak ??? ??? ???? ???? ??? ??? ???????????? ???????????? ???????????? c derate above 25 c ??? ??? ??? ???? ???? ???? ??? ??? ??? c ???????????? ???????????? ???????????? ???????????? c derate above 25 c ??? ??? ??? ??? ???? ???? ???? ???? ??? ??? ??? ??? c unclamped inductive load energy (note 1) e 62.5 mj ???????????? ???????????? ??? ??? ???? ???? ? 65 to +150 ??? ??? c ??????????????????? ??????????????????? thermal characteristics ???????????? ???????????? ??? ??? ???? ???? ??? ??? ???????????? ???????????? thermal resistance, junction ? to ? case ??? ??? jc ???? ???? ??? ??? c/w ???????????? ???????????? ???????????? ? to ? ambient ??? ??? ??? ja ???? ???? ???? ??? ??? ??? c/w ???????????? ???????????? ? to ? ambient (note 2) ??? ??? ja ???? ???? ??? ??? c/w ???????????? ???????????? ???????????? from case for 10 seconds ??? ??? ??? ???? ???? ???? ??? ??? ??? c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. i c = 2.5 a, l = 20 mh, p.r.f. = 10 hz, v cc = 10 v, r be = 100 2. when surface mounted to an fr ? 4 board using the minimum recommended pad size. device package shipping ? ordering information d 2 pak case 418b style 1 marking diagram j4xcg ayww complementary silicon power transistors 6 amperes, 100 volts, 65 watts j4xc = specific device code x = 1 or 2 a = assembly location y = year ww = work week g= pb ? free package mjb41ct4g d 2 pak (pb ? free) 800 / tape & reel http://onsemi.com mjb42ct4g d 2 pak (pb ? free) 800 / tape & reel mjb42cg d 2 pak (pb ? free) 50 units / rail mjb41cg d 2 pak (pb ? free) 50 units / rail ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. NJVMJB41CT4G d 2 pak (pb ? free) 800 / tape & reel njvmjb42ct4g d 2 pak (pb ? free) 800 / tape & reel
mjb41c, NJVMJB41CT4G (npn), mjb42c, njvmjb42ct4g (pnp) http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? (t c = 25 c unless otherwise noted) ??????????????????????? ??????????????????????? characteristic ???? ???? ???? ???? ??? ??? ??? ??? ????????????????????????????????? ????????????????????????????????? ??????????????????????? ??????????????????????? collector ? emitter sustaining voltage (note 3) (i c = 30 madc, i b = 0) ???? ???? ???? ???? ??? ??? ? ??? ??? vdc ??????????????????????? ??????????????????????? ???? ???? ???? ???? ? ??? ??? 0.7 ??? ??? ??????????????????????? ??????????????????????? ???? ???? ???? ???? ? ??? ??? 100 ??? ??? adc ??????????????????????? ??????????????????????? ???? ???? ???? ???? ? ??? ??? 50 ??? ??? adc ????????????????????????????????? ????????????????????????????????? on characteristics (note 3) ??????????????????????? ??????????????????????? ???? ???? ???? ???? ??? ??? ? 75 ??? ??? ? ??????????????????????? ??????????????????????? collector ? emitter saturation voltage (i c = 6.0 adc, i b = 600 madc) ???? ???? ???? ???? ? ??? ??? 1.5 ??? ??? ??????????????????????? ??????????????????????? ? emitter on voltage (i c = 6.0 adc, v ce = 4.0 vdc) ???? ???? ???? ???? ? ??? ??? 2.0 ??? ??? ????????????????????????????????? ????????????????????????????????? dynamic characteristics ??????????????????????? ??????????????????????? current ? gain ? bandwidth product (i c = 500 madc, v ce = 10 vdc, f test = 1.0 mhz) ???? ???? ???? ???? ??? ??? ? ??? ??? mhz ??????????????????????? ??????????????????????? ? signal current gain (i c = 0.5 adc, v ce = 10 vdc, f = 1.0 khz) ???? ???? ???? ???? ??? ??? ? ??? ??? 3. pulse test: pulse width 300 s, duty cycle 2.0%. figure 1. power derating t, temperature ( c) 0 100 0 20 160 40 60 60 80 40 140 80 figure 2. switching time test circuit 0.06 figure 3. turn ? on time i c , collector current (amp) 0.02 0.4 6.0 0.07 1.0 4.0 t j = 25 c v cc = 30 v i c /i b = 10 t, time (s) 0.5 0.3 0.1 0.05 0.1 0.6 1.0 t d @ v be(off) 5.0 v 0.03 0.7 2.0 0.2 2.0 t r 20 120 p d , power dissipation (watts) t c t c 0 1.0 2.0 3.0 4.0 t a t a +11 v 25 s 0 -9.0 v r b -4 v d 1 scope v cc +30 v r c t r , t f 10 ns duty cycle = 1.0% r b and r c varied to obtain desired current levels d 1 must be fast recovery type, e.g.: 1n5825 used above i b 100 ma msd6100 used below i b 100 ma 0.2
mjb41c, NJVMJB41CT4G (npn), mjb42c, njvmjb42ct4g (pnp) http://onsemi.com 3 t, time (ms) 1.0 0.01 0.01 0.1 r(t), transient thermal resistance (normalized) 1.0 1.0 100 z jc(t) = r(t) r jc r jc = 1.92 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) z jc(t) p (pk) t 1 t 2 single pulse 1.0 k d = 0.5 0.2 0.05 duty cycle, d = t 1 /t 2 figure 4. thermal response 0.1 0.05 0.02 0.01 0.03 0.02 0.07 0.5 0.3 0.2 0.7 0.02 0.05 0.2 0.5 2.0 5.0 200 500 10 20 50 v ce , collector-emitter voltage (volts) 10 20 5.0 60 100 figure 5. active ? region safe operating area 0.2 0.1 0.5 secondary breakdown ltd bonding wire ltd thermal limitation @ t c = 25 c (single pulse) 1.0ms 2.0 1.0 10 5.0 i c , collector current (amp) 0.5ms curves apply below rated v ceo 3.0 0.3 40 80 5.0ms there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 5 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 4. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 0.1 0.4 0.6 4.0 0.06 1.0 2.0 0.2 i c , collector current (amp) figure 6. turn ? off time 5.0 t, time (s) 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 6.0 1.0 3.0 5.0 20 0.5 10 2.0 v r , reverse voltage (volts) figure 7. capacitance 300 c, capacitance (pf) 200 100 70 50 30 30 50 t j = 25 c v cc = 30 v i c /i b = 10 i b1 = i b2 c ib c ob 3.0 t s t f t j = 25 c
mjb41c, NJVMJB41CT4G (npn), mjb42c, njvmjb42ct4g (pnp) http://onsemi.com 4 v ce , collector-emitter voltage (volts) t j , junction temperature ( c) 10 3 -0.3 10 1 10 0 10 -2 10 2 10 -1 10 -3 10m 100k 10k 0.1k 1.0m 1.0k i b , base current (ma) i c , collector current (amp) h fe , dc current gain figure 8. dc current gain figure 9. collector saturation region i c , collector current (amp) 300 500 0.1 0.2 0.4 6.0 0.06 100 70 50 30 10 7.0 0.3 v be , base-emitter voltage (volts) figure 10. ?on? voltages v ce = 2.0 v 5.0 1.0 2.0 0.6 1.6 2.0 20 30 100 1000 10 0.8 0.4 50 0 300 500 200 25 c t j = 150 c -55 c 1.2 2.0 0.06 i c , collector current (amp) 1.6 0.8 1.2 0.4 0 0.1 0.2 0.3 0.4 0.6 1.0 +2.5 i c = 1.0 a 20 60 80 100 120 160 140 40 v, voltage (volts) t j = 25 c 2.5 a 5.0 a 2.0 3.0 4.0 6.0 v be(sat) @ i c /i b = 10 v be @ v ce = 4.0 v v ce(sat) @ i c /i b = 10 v , temperature coefficients (mv/ c) +2.0 +1.5 +1.0 +0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 *applies for i c /i b h fe /4 * vc for v ce(sat) vb for v be figure 11. temperature coefficients , collector current (a) i c -0.2 -0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6 figure 12. collector cut ? off region figure 13. effects of base ? emitter resistance v ce = 30 v t j = 150 c 100 c 25 c reverse forward i c = i ces r be , external base-emitter resistance (ohms) v ce = 30 v i c = 10 x i ces i c i ces i c = 2 x i ces (typical i ces values obtained from figure 12) 200 20 4.0 0.06 0.1 0.2 0.3 0.5 1.0 2.0 3.0 4.0 6.0 +25 c to +150 c -55 c to +25 c +25 c to +150 c -55 c to +25 c +0.7 t j = 25 c
mjb41c, NJVMJB41CT4G (npn), mjb42c, njvmjb42ct4g (pnp) http://onsemi.com 5 package dimensions seating plane s g d ? t ? m 0.13 (0.005) t 23 1 4 3 pl k j h v e c a dim min max min max millimeters inches a 0.340 0.380 8.64 9.65 b 0.380 0.405 9.65 10.29 c 0.160 0.190 4.06 4.83 d 0.020 0.035 0.51 0.89 e 0.045 0.055 1.14 1.40 g 0.100 bsc 2.54 bsc h 0.080 0.110 2.03 2.79 j 0.018 0.025 0.46 0.64 k 0.090 0.110 2.29 2.79 s 0.575 0.625 14.60 15.88 v 0.045 0.055 1.14 1.40 ? b ? m b w w notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 418b ? 01 thru 418b ? 03 obsolete, new standard 418b ? 04. f 0.310 0.350 7.87 8.89 l 0.052 0.072 1.32 1.83 m 0.280 0.320 7.11 8.13 n 0.197 ref 5.00 ref p 0.079 ref 2.00 ref r 0.039 ref 0.99 ref m l f m l f m l f variable configuration zone r n p u view w ? w view w ? w view w ? w 123 d 2 pak 3 case 418b ? 04 issue k style 1: pin 1. base 2. collector 3. emitter 4. collector *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 8.38 5.080 dimensions: millimeters pitch 2x 16.155 1.016 2x 10.49 3.504
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