CP775 p-channel mosfet die enhancement-mode mechanical specifications: die size 90 x 60 mils die thickness 7.5 mils gate bonding pad area 14.1 x 18.8 mils source bonding pad area 52 x 88 mils top side metalization al - 40,000? back side metalization ti/ni/ag - 1,000?/3,000?/10,000? scribe alley width 3.15 mils wafer diameter 8 inches gross die per wafer 8,000 maximum ratings: (t a =25c) symbol units drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current (steady state) i d 11 a maximum pulsed drain current, tp=10s i dm 50 a operating and storage junction temperature t j , t stg -55 to +150 c electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min typ max units i gssf , i gssr v gs =20v, v ds =0 100 na i dss v ds =30v, v gs =0 1.0 a bv dss v gs =0, i d =250a 30 v v gs(th) v gs =v ds , i d =250a 1.0 1.4 3.0 v v sd v gs =0, i s =2.6a 1.3 v r ds(on) v gs =10v, i d =11a 12 20 m r ds(on) v gs =4.5v, i d =8.5a 15 30 m c rss v ds =8.0v, v gs =0, f=1.0mhz 450 pf c iss v ds =8.0v, v gs =0, f=1.0mhz 3100 pf c oss v ds =8.0v, v gs =0, f=1.0mhz 320 pf r0 (8-august 2013) the CP775 medium power p-channel mosfet is designed for power management and load switching applications. the 7.5 mil thick die provides an ultra low pro? le device that is readily attached using standard die attach wire bond processes. features: ? low on-resistance, r ds(on) ? low gate charge, q gs ? high drain current density applications: ? load switching ? power management ? dc-dc conversion www.centralsemi. com
q g(tot) v dd =15v, v gs =10v, i d =11a 80 nc q gs v dd =15v, v gs =10v, i d =11a 7.0 nc q gd v dd =15v, v gs =10v, i d =11a 10.1 nc t on v dd =15v, v gs =10v, i d =1.0a 49 ns t off r g =6.0, r l =15 330 ns electrical characteristics - continued: (t a =25c unless otherwise noted) symbol test conditions min typ max units r0 (8-august 2013) CP775 p-channel mosfet die enhancement-mode www.centralsemi. com
CP775 typical electrical characteristics r0 (8-august 2013) www.centralsemi. com
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