1 dual n-channel 20-v (d-s) mosfet features ? h alogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? 100 % uis tested ? compliant to rohs directive 2002/95/ec applications ? dc/dc converter - game machine - pc product summary v ds (v) r ds(on) ( ) i d (a) a q g (typ.) 20 0.014 at v gs = 4.5 v 7 10 nc 0.020 at v gs = 2.5 v 7 d 1 g 1 d 1 d 2 g 2 d 2 so -8 5 6 7 8 to p v ie w 2 3 4 1 s 1 s 2 notes: a. p a ckage limited, t c = 25 c. b. surface mounted on 1" x 1" fr4 board. c. t = 10 s. d. maximum under steady state conditions is 110 c/w. absolute maximum ratings t a = 2 5 c, unless otherwise noted pa ram e ter sym bol limit un it d rain-source voltage v ds 20 v gate-source vo ltage v gs 12 c ontin uous drain current (t j = 150 c ) t c = 25 c i d 7 a a t c = 70 c 7 a t a = 25 c 7 a, b, c t a = 70 c 6.7 b, c pulsed drain current i dm 30 c ontinuous source-drain diode current t c = 25 c i s 2.6 t a = 25 c 1.7 b, c single pulse av alanche current l = 0.1 mh i as 5 single pulse av alanche energ y e as 1.25 mj m axim um power dissipation t c = 25 c p d 3.1 w t c = 70 c 2 t a = 25 c 2 b, c t a = 70 c 1.3 b, c opera ting j unction and storage temperature range t j , t stg - 55 to 150 c th erm al resistance ratings param eter symbol t ypical maximum u nit maxim um junction-to-ambient a, c, d t 10 s r thja 50 62 .5 c /w maximum junction-to-foot (drain) steady state r thjf 32 40 g1 d1 s1 g2 d2 s2 www.din-tek.jp dt m 9 9 3 6
2 not e s: a. p ulse test; pulse width d 300 s, duty cycle d 2 % b. guaranteed by design, not s ubject to production testing. stresses b eyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. s pecifications t j = 25 c, unless otherwise noted p arame ter s ymbol t est c onditions min. typ. max. unit static drain-source breakdown v oltage v ds v gs = 0 v , i d = 250 a 20 v v ds temper ature coefficient ' v ds /t j i d = 250 a 25 mv/c v gs(t h) t emperature co efficient ' v gs(t h) /t j - 4.0 gate-s o urce threshold voltage v gs(t h) v ds = v gs , i d = 250 a 0.6 1.5 v gate-source leakage i gss v ds = 0 v, v gs = 1 2 v 100 na zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v 1 a v ds = 20 v , v gs = 0 v , t j = 55 c 10 on-state dr ain current a i d(on) v ds t 5 v, v gs = 4.5 v 30 a drain-source on-state re sista nce a r ds(o n ) v gs 4.5 v, i d = 6.3 a 0.010 0.014 : v gs 2.5 v, i d = 4.5 a 0.017 0.020 forward transconductance a g fs v ds = 10 v, i d = 6.3 a 45 s dynam i c b inpu t capacitance c iss v ds = 10 v , v gs = 0 v , f = 1 mhz 1200 pf output capacitance c oss 220 re verse transfer capacitance c rss 100 to tal gate charge q g v ds = 10 v, v gs = 10 v , i d = 6.3 a 22 33 nc v ds = 10 v, v gs = 4.5 v, i d = 6.3 a 10 15 gate-s o urce charge q gs 2.5 gate-dr a in charge q gd 1.7 g ate resistance r g f = 1 mhz 2.4 : t ur n-on delay time t d(o n) v dd = 10 v, r l = 1.5 : i d # 6.7 a, v gen = 4.5 v, r g = 1 : 15 25 ns rise time t r 10 15 t ur n-off delay time t d(off) 35 55 fa l l time t f 12 20 t ur n-on delay time t d( on) v dd = 10 v, r l = 1.5 : i d # 6.7 a, v gen = 10 v, r g = 1 : 10 15 rise time t r 12 20 t ur n-off delay time t d(off) 25 40 fa l l time t f 10 15 drain - so urce body diode characteristics continuous source-drain diode current i s t c = 25 c 2.6 a pulse diod e f orward current i sm 30 body diode v o ltage v sd i s = 6.7 a, v gs = 0 v 0.8 1.2 v body diode re verse recovery time t rr i f = 6.7 a, di/dt = 100 a/s , t j = 25 c 20 40 ns body diode re verse recovery charge q rr 10 20 nc re verse recovery fall time t a 10 ns re v erse reco very rise time t b 10 z z z g l q w h n m s ' 7 0
3 typica l c har acteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current gate charge 0 6 12 1 8 24 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d v gs = 5 v thr u 2.5 v v gs = 1.5 v v gs = 2 v v gs = 1 v 0.010 0.012 0.014 0.016 0.01 8 0.020 0.022 0 6 12 1 8 24 30 - on-resistance ( ) r ds(on) i d - drain c u rrent (a) v gs = 2.5 v v gs = 4.5 v 0 2 4 6 8 10 0 5 10 15 20 25 i d = 6 6.3 a - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs v ds = 16 v v ds = 10 v t ransfer characteristics capacitance on -resistance vs. junction temperature 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d t c = 25 c t c = 125 c t c = - 55 c c rss 0 300 600 900 1200 1500 0 5 10 15 20 c iss v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf) c oss 0.6 0. 8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 t j - j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on) v gs = 4.5 v , 2.5 v i d = 6 6.3 a www.din-tek.jp dt m 9 9 3 6
4 ty pi cal ch aracteristics 25 c, unless otherwise noted source- drain dio de forward voltage threshold voltage 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 t j = 150 c 10 v sd - so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s 1 100 t j = 25 c 0.4 0.6 0. 8 1.0 1.2 1.4 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a ( v ) v gs(th) t j - temperat u re (c) on-resista nce vs. gate-to-source voltage single pulse power 0.000 0.010 0.020 0.030 0.040 0246 8 10 - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) t j = 25 c t j = 125 c i d = 6.3 a 0 5 10 15 20 25 30 po w er ( w ) time (s) 10 1000 0.1 0.01 0.001 100 1 safe operat ing area, junction-to-ambient v ds - drain-to-so u rce v oltage ( v ) * v gs minim u m v gs at w hich r ds(on) is specified 100 1 0.1 1 10 100 0.01 10 - drain c u rrent (a) i d 0.1 t a = 25 c single p u lse limited b y r ds(on) * b v dss limited dc 10 s 1 s 100 ms 10 ms 1 ms 100 s www.din-tek.jp dt m 9 9 3 6
5 typica l c har acteristics 25 c, unless otherwise noted * t he po wer dissipation p d is based on t j(ma x ) = 150 c , using junction-to-case thermal resi stance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0 2 4 6 8 10 12 0 25 50 75 100 125 150 t c - case temperat u re (c) i d - drain c u rrent (a) package limited power derating 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 25 50 75 100 125 150 t c - case temperat u re (c) po w er ( w ) www.din-tek.jp dt m 9 9 3 6
6 ty pi cal ch aracteristics 25 c, unless otherwise noted normalized t h ermal transient im pedance, junction-to-ambient 10 -3 10 -2 1 10 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square w a ve pulse duration (s) normaliz ed ef f ective transient thermal impedance 1. duty cycle , d = 2. per unit base = r thja = 90 c/w 3. t - jm t a = p dm z thja (t ) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm nor m alized thermal transient impedance, junction-to-foot 10 -3 10 -2 11 0 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square w ave pulse duration (s) normaliz ed ef f ective transient thermal impedance www.din-tek.jp dt m 9 9 3 6
1 di m millimeter s inc hes min ma x min max a 1 .35 1.7 5 0.053 0.069 a 1 0 .10 0.2 0 0.004 0.008 b 0.35 0.51 0.014 0.020 c 0.19 0.25 0.0075 0.010 d 4.80 5.00 0.189 0.196 e 3.80 4.00 0.150 0.157 e 1.27 bsc 0.050 bsc h 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 l 0.50 0.93 0.020 0.037 q0 8 0 8 s 0.44 0.64 0.018 0.026 ecn: c-06527-rev. i, 11-sep-06 dwg: 5498 4 3 1 2 5 6 8 7 h e h x 45 c all lea d s q 0.101 mm 0.004" l ba 1 a e d 0.25 mm (ga ge pla ne) soic (narrow): 8-lead jedec p a rt n u m b er: ms -012 s package information www.din-tek.jp
1 appl ication note r ecommended minimum pads for so-8 0.246 (6.248) recommended mi nimum pads dimensions in inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.71 1) 0.050 (1.270) 0.022 (0.559) return to index r eturn to inde x application note www.din-tek.jp
1 disclaimer all product, produ ct specifications and data are subject to change without notice to improve reliability, function or design or otherwise. din-tek intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, din-tek ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. din-tek makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, din-tek disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on din-tek s knowledge of typical requirements that are often placed on din-tek products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify din-tek s terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, din-tek products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the din-tek product could result in personal injury or death. customers using or selling din-tek products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized din-tek personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of din-tek . product names and markings noted herein may be trad emarks of their respective owners. material category policy din-tek intertech nology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some din-tek documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. din-tek intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some din-tek documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards. legal disclaimer notice www.din-tek.jp
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