tsc128d high voltage npn transistor with diode 1/6 version: b11 to - 220 to - 263 (d 2 pak) product summary bv ceo 400v bv cbo 700v i c 4a v ce(sat) 1.5v @ i c / i b = 4a / 1a features build-in free-wheeling diode makes efficient anti- saturation operation no need to interest an hfe value because of low variable storage-time spread even though comer spirit product. low base drive requirement suitable for half bridge light ballast application block diagram structure silicon triple diffused type npn silicon transistor integrated anti-parallel collector-emitter diode ordering information part no. package packing tsc128dcz c0 to-220 50pcs / tube tsc128dcm rn to-263 800pcs / 13 reel absolute maximum rating (ta = 25 o c unless otherwise noted) parameter symbol limit unit collector-base voltage v cbo 700 v collector-emitter voltage @ v be =0v v ces 700 v collector-emitter voltage v ceo 400 v emitter-base voltage v ebo 9 v collector current i c 4 a collector peak current (tp <5ms) i cm 8 a base current i b 2 a base peak current (tp <5ms) i bm 4 a power total dissipation @ tc=25oc p dtot 35 w maximum operating junction temperature t j +150 o c storage temperature range t stg -55 to +150 o c pin definition : 1. base 2. collector 3. emitter
tsc128d high voltage npn transistor with diode 2/6 version: b11 thermal performance parameter symbol limit unit thermal resistance - junction to case to-220 r ? jc 1.78 o c/w to-263 1.78 thermal resistance - junction to ambient to-220 r ? ja 62.5 o c/w to-263 62.5 electrical specifications (ta = 25 o c unless otherwise noted) parameter conditions symbol min typ max unit static collector-base voltage i c =1ma, i b =0 bv cbo 700 -- -- v collector-emitter breakdown voltage i c =10ma, i e =0 bv ceo 400 -- -- v emitter-base breakdown voltage i e =1ma, i c =0 bv ebo 9 -- -- v collector cutoff current v cb =700v, i e =0 i cbo -- -- 100 ua collector cutoff current v ce =400v, i b =0 i ceo -- -- 250 ua emitter cutoff current v eb =7v, i c =0 i ebo -- -- 10 ua collector-emitter saturation voltage i c =0.5a, i b =0.1a v ce(sat)1 -- 0.25 0.7 v i c =1a, i b =0.2a v ce(sat)2 -- 0.5 1 i c =2.5a, i b =0.5a v ce(sat)3 -- 1.2 1.5 i c =4a, i b =1a v ce(sat)4 -- 0.5 -- base-emitter saturation voltage i c =1a, i b =0.2a v be(sat)1 -- -- 1.1 v i c =2a, i b =0.5a v be(sat)2 -- -- 1.2 dc current gain v ce =5v, i c =10ma hfe 10 -- -- v ce =5v, i c =1a 17 -- 27 v ce =5v, i c =2a 12 -- 32 forward voltage drop i f =2a vf -- -- 2 v turn on time v cc =250v, i c =1a, i b1 =i b2 =0.2a, t p =25us duty cycle<1% t on -- 0.2 0.6 us storage time t stg -- 3.0 4.5 us fall time t f -- 0.2 0.3 us notes: pulsed duration =380us, duty cycle 2%
tsc128d high voltage npn transistor with diode 3/6 version: b11 electrical characteristics curve (ta = 25 o c, unless otherwise noted) figure 1. static characteristics figure 2. dc current gain figure 3. vce(sat) v.s. vbe(sat) figure 4. power derating figure 5. reverse bias soa figure 6. safety operating area
tsc128d high voltage npn transistor with diode 4/6 version: b11 to-220 mechanical drawing marking diagram y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec) l = lot code to-220 dimension dim millimeters inches min max min max a 9.31 10.550 0.366 0.415 b 3.740 3.910 0.147 0.154 c 2.440 2.940 0.096 0.116 d 2.22 3.22 0.087 0.127 e 0.78 0.98 0.030 0.038 f 2.34 2.65 0.092 0.104 g 4.69 5.31 0.184 0.209 h 12.32 13.88 0.485 0.546 i 8.74 9.26 0.344 0.364 j 15.07 16.07 0.593 0.632 k 4.35 4.65 0.171 0.183 l 1.16 1.40 0.045 0.055 m 27.39 30.35 1.078 1.194 n 1.785 2.675 0.070 0.105 o 1.50 1.75 0.059 0.068 p 5.75 7.65 0.226 0.301
tsc128d high voltage npn transistor with diode 5/6 version: b11 to-263 mechanical drawing marking diagram y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec) l = lot code to-263 dimension dim millimeters inches min max min max a 10.000 10.500 0.394 0.413 b 14.605 15.875 0.575 0.625 c 0.508 0.991 0.020 0.039 d 2.420 2.660 0.095 0.105 e 4.064 4.830 0.160 0.190 f 1.118 1.400 0.045 0.055 g 0.450 0.730 0.018 0.029 h 8.280 8.800 0.325 0.346 i 1.140 1.400 0.044 0.055 j 1.480 1.520 0.058 0.060
tsc128d high voltage npn transistor with diode 6/6 version: b11 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any erro rs or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and co nditions of sale for such products, tsc assumes no liability wh atsoever, and disclaims any express or implied warr anty, relating to sale and/or use of tsc products includi ng liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, cop yright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applica tions. customers using or selling these products for use i n such applications do so at their own risk and agr ee to fully indemnify tsc for any damages resulting from such i mproper use or sale.
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