AON7784 30v n-channel mosfet general description product summary v ds i d (at v gs =10v) 50a r ds(on) (at v gs =10v) < 3.5m w r ds(on) (at v gs = 4.5v) < 4m w 100% uis tested 100% r g tested symbol v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r q jc maximum junction-to-case c/w 1.1 55 1.5 maximum junction-to-ambient a d power dissipation b p d w power dissipation a p dsm w t a =70c 83 4 t a =25c a t a =25c i dsm a t a =70c i d 50 39 t c =25c t c =100c avalanche energy l=0.1mh c mj avalanche current c 25 continuous drain current 58 31 a 34 srfet tm AON7784 uses advanced trench technology with a monolithically integrated schottky diode to provide excellent r ds(on) and low gate charge. this device is suitable for use as a low side fet in smps, load switching and general purpose applications. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 30v v 12 units junction and storage temperature range -55 to 150 c thermal characteristics gate-source voltage drain-source voltage 30 maximum junction-to-ambient a 265 pulsed drain current c continuous drain current g parameter typ max c/w r q ja 16 45 20 c/w t c =25c 6.2 33 t c =100c srfet tm g ds srfet tm s oft r ecovery mos fet : integrated schottky diode top view 1 2 3 4 8 7 6 5 dfn 3.3x3.3 top view bottom view pin 1 rev 1 : mar. 2011 www.aosmd.com page 1 of 7
AON7784 symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 0.5 t j =125c 100 i gss 100 na v gs(th) gate threshold voltage 1.2 1.6 2.1 v i d(on) 265 a 2.8 3.5 t j =125c 4.3 5.5 3.2 4 m w g fs 110 s v sd 0.4 v i s 50 a c iss 3000 3800 4600 pf c oss 280 400 520 pf c rss 150 260 370 pf r g 0.3 0.6 0.9 w q g (4.5v) 22 28 34 nc q gs v gs =10v, v ds =15v, i d =20a 8 nc q gd 9 nc t d(on) 10 ns t r 6 ns t d(off) 55 ns t f 6 ns t rr 8 11 14 ns q rr 13 17 21 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time drain-source breakdown voltage on state drain current i d =10ma, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =20a reverse transfer capacitance i f =20a, di/dt=500a/ m s v gs =0v, v ds =15v, f=1mhz switching parameters i dss ma v ds =0v, v gs = 12v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions forward transconductance i s =1a,v gs =0v v ds =5v, i d =20a v gs =4.5v, i d =20a diode forward voltage v ds =v gs i d =250 m a r ds(on) static drain-source on-resistance m w v gs =10v, v ds =15v, r l =0.75 w , r gen =3 w gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time gate source charge gate drain charge total gate charge body diode reverse recovery charge i f =20a, di/dt=500a/ m s maximum body-diode continuous current g input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the power dissipation p dsm is based on r q ja t 10s value and the maximum allowed junction tempera ture of 150c. the value in any given application depends on the user's specific board de sign, and the maximum temperature of 150c may be u sed if the pcb allows it. b. the power dissipation p d is based on t j(max) =150c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150c. ratings are based on low frequency and duty cycles to keep initial t j =25c. d. the r q ja is the sum of the thermal impedence from junction to case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150c. the soa curve provides a single pulse ratin g. g. the maximum current rating is package limited. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. rev 1: mar. 2011 www.aosmd.com page 2 of 7
AON7784 typical electrical and thermal characteristics 17 52 10 0 18 40 0 20 40 60 80 100 1.5 2 2.5 3 3.5 v gs (volts) figure 2: transfer characteristics (note e) i d (a) 2.0 2.4 2.8 3.2 3.6 4.0 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m w ww w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics (note e) i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance v gs =4.5v i d =20a v gs =10v i d =20a 0 3 6 9 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m w ww w ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =20a 25c 125c 0 20 40 60 80 100 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics (note e) i d (a) v gs =2.5v 3v 4.5v 10v rev 1: mar. 2011 www.aosmd.com page 3 of 7
AON7784 typical electrical and thermal characteristics 17 52 10 0 18 40 0 2 4 6 8 10 0 10 20 30 40 50 60 70 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 50 100 150 200 250 300 350 400 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) z q qq q jc normalized transient thermal resistance c oss c rss v ds =15v i d =20a single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t c =25c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150c t c =25c 100 m s r q jc =1.5c/w rev 1: mar. 2011 www.aosmd.com page 4 of 7
AON7784 typical electrical and thermal characteristics 17 52 10 0 18 40 0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal imp edance (note h) z q qq q ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0 10 20 30 40 50 60 70 80 90 0 25 50 75 100 125 150 t case (c) figure 13: power de-rating (note f) power dissipation (w) 0 10 20 30 40 50 60 0 25 50 75 100 125 150 t case (c) figure 14: current de-rating (note f) current rating i d (a) 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) power (w) t a =25c r q ja =55c/w 10 100 1000 1 10 100 1000 time in avalanche, t a ( m mm m s) figure 12: single pulse avalanche capability (note c) i ar (a) peak avalanche current t a =100c t a =150c t a =125c t a =25c rev 1: mar. 2011 www.aosmd.com page 5 of 7
AON7784 typical electrical and thermal characteristics 0 5 10 15 20 25 30 0 5 10 15 20 25 30 i s (a) figure 18: diode reverse recovery charge and peak current vs. conduction current q rr (nc) 0 2 4 6 8 10 12 i rm (a) di/dt=800a/ m s 125oc 125oc 25oc 25oc q rr i rm 0 5 10 15 20 25 0 200 400 600 800 1000 di/dt (a/ m mm m s) figure 20: diode reverse recovery charge and peak current vs. di/dt q rr (nc) 0 2 4 6 8 10 i rm (a) 125oc 125oc 25oc 25oc i s =20a q rr i rm 0 2 4 6 8 10 12 0 5 10 15 20 25 30 i s (a) figure 19: diode reverse recovery time and softness factor vs. conduction current t rr (ns) 0 0.5 1 1.5 2 2.5 3 s di/dt=800a/ m s 125oc 125oc 25oc 25oc t rr s 0 3 6 9 12 15 18 0 200 400 600 800 1000 di/dt (a/ m mm m s) figure 21: diode reverse recovery time and softness factor vs. di/dt t rr (ns) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 s 125oc 25oc 25oc 125o i s =20a t rr s 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 0 50 100 150 200 temperature (c) figure 17: diode reverse leakage current vs. junction temperature i r (a) v ds =15v v ds =30v 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 50 100 150 200 temperature (c) figure 18: diode forward voltage vs. junction temperature v sd (v) i s =1a 10a 20a 5a rev 1: mar. 2011 www.aosmd.com page 6 of 7
AON7784 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr rev 1: mar. 2011 www.aosmd.com page 7 of 7
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