advanced power p-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss -80v lower gate charge r ds(on) 180m fast switching characteristic i d -2.7a description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 50 /w data and specifications subject to change without notice thermal data parameter total power dissipation operating junction temperature range -55 to 150 linear derating factor 0.02 storage temperature range continuous drain current 3 -2.1 pulsed drain current 1 -20 parameter drain-source voltage gate-source voltage continuous drain current 3 AP9585GM rating 200811181 rohs-compliant product 1 -80 + 20 -2.7 2.5 -55 to 150 advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the so-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. s s s g d d d d so-8 g d s
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -80 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-2.7a - - 180 m ? ? 0v - - + 100 na q g total gate charge 2 i d =-2.7a - 18 28 nc q gs gate-source charge v ds =-64v - 5 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 7 - nc t d(on) turn-on delay time 2 v ds =-40v - 10 - ns t r rise time i d =-1a - 6 - ns t d(off) turn-off delay time r g =3.3 ,
AP9585GM fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 2 4 6 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0 5 10 15 20 25 30 35 40 048121620 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =25 o c -10v -6.0v -5.0v -4.5v v g = -3.0 v 125 130 135 140 145 150 34567891011 -v gs , gate-to-source voltage (v) r ds(on) (m
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 AP9585GM t d(on) t r t d(off) t f v ds v gs 10% 90% q v g -4.5v q gs q gd q g charge 0 2 4 6 8 10 12 0 10203040 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d = -2.7a v ds = -64v 10 100 1000 10000 1 5 9 1317212529 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 10 100 0.1 1 10 100 1000 -v ds , drain-to-source voltage (v) -i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =125 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse
millimeters symbols min nom max a 1.35 1.55 1.75 a1 0.10 0.18 0.25 b 0.33 0.41 0.51 c 0.19 0.22 0.25 d 4.80 4.90 5.00 e 5.80 6.15 6.50 e1 3.80 3.90 4.00 e g l 0.38 0.90 0.00 4.00 8.00 1.all dimension are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : so-8 1.27 typ 0.254 typ package outline : so-8 advanced power electronics corp. e b 1 34 5 6 7 8 2 d e1 a1 a g part number 9585 g m ywwsss package code date code (ywwsss) y last digit of the year ww week sss sequence e meet rohs requirement
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