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  new product n-channel enhancement mode mosfet product summary v (br)dss r ds(on) max i d max t a = 25c 30v 73m ? @ v gs = 10v 3.3a 110m ? @ v gs = 4.5v 2.7a description and applications this mosfet has been designed to minimize the on-state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high efficiency po wer management applications. ? general purpose interfacing switch ? power management functions ? boost application ? analog switch features and benefits ? low on-resistance ? low input capacitance ? fast switching speed ? lead free by design/rohs compliant (note 1) ? "green" device (note 2) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot-23 ? case material: molded plastic, "green" molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminal connections indicator: see diagram ? terminals: finish ? nipdau over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.027 grams (approximate) ordering information (note 3) part number case packaging DMN3110S-7 sot-23 3000/tape & reel notes: 1. no purposefully added lead. marking information sales@twtysemi.com 1 of 2 http://www.twtysemi.com DMN3110S product specification
new product maximum ratings @t a = 25c unless otherwise specified characteristic symbol value units drain-source voltage v dss 30 v gate-source voltage v gss 20 v continuous drain current (note 4) v gs = 10v steady state t a = 25 c t a = 70 c i d 2.5 2.0 a continuous drain current (note 5) v gs = 10v steady state t a = 25 c t a = 70 c i d 3.3 2.7 a continuous drain current (note 5) v gs = 10v t Q 10sec t a = 25 c t a = 70 c i d 3.8 3.1 a continuous drain current (note 5) v gs = 4.5v steady state t a = 25 c t a = 70 c i d 2.7 2.1 a pulsed drain current (note 6) i dm 25 a thermal characteristics @t a = 25c unless otherwise specified characteristic symbol value units total power dissipation (note 4) p d 0.74 w thermal resistance, junction to ambient (note 4) r ja 173.4 c/w total power dissipation (note 5) p d 1.3 w thermal resistance, junction to ambient (note 5) r ja 99.1 c/w total power dissipation (note 5) t Q 10sec p d 1.8 w thermal resistance, junction to ambient (note 5) t Q 10sec r ja 72 c/w operating and storage temperature range t j, t stg -55 to +150 c electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 7) drain-source breakdown voltage bv dss 30 - - v v gs = 0v, i d = 250  a zero gate voltage drain current @t c = 25c i dss - - 1.0  a v ds = 30v, v gs = 0v gate-source leakage i gss - - 100 na v gs = 20v, v ds = 0v on characteristics (note 7) gate threshold voltage v gs ( th ) 1.0 - 3.0 v v ds = v gs , i d = 250  a static drain-source on-resistance r ds (on) - 54 73 m v gs = 10v, i d = 3.1a - 88 110 v gs = 4.5v, i d = 2a forward transfer admittance |y fs | - 4.8 - ms v ds = 10v, i d = 3.1a diode forward voltage (note 6) v sd - 0.75 1.0 v v gs = 0v, i s = 1a dynamic characteristics (note 8) input capacitance c iss - 305.8 - pf v ds = 15v, v gs = 0v, f = 1.0mhz output capacitance c oss - 39.9 - pf reverse transfer capacitance c rss - 39.5 - pf gate resistance r g - 1.4 - v ds = 0v, v gs = 0v,f = 1.0mhz total gate charge (v gs = 4.5v) q g - 4.1 - nc v gs = 10v, v ds = 10v, i d = 3a total gate charge (v gs = 10v) q g - 8.6 - nc gate-source charge q g s - 1.2 - nc gate-drain charge q g d - 1.5 - nc turn-on delay time t d ( on ) - 2.6 - ns v dd = 15v, v gs = 10v, r l = 47  , r g = 3  , turn-on rise time t r - 4.6 - ns turn-off delay time t d ( off ) - 13.1 - ns turn-off fall time t f - 2.5 - ns notes: 2. device mounted on fr-4 pcb, with minimum recommended pad layout. 3. device mounted on fr-4 substrate pc board, 2oz copper, on 1inch square copper plate 4. device mounted on minimum recommended pad layout test board, 10  s pulse duty cycle = 1% 5. short duration pulse test used to minimize self-heating effect. 6. guaranteed by design. not subject to product testing. DMN3110S product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com


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Price & Availability of DMN3110S
Newark

Part # Manufacturer Description Price BuyNow  Qty.
DMN3110S-7
28AK8565
Diodes Incorporated Mosfet, N-Ch, 30V, 2.5A, Sot-23 Rohs Compliant: Yes |Diodes Inc. DMN3110S-7 1000: USD0.248
500: USD0.298
250: USD0.326
100: USD0.353
50: USD0.374
25: USD0.396
10: USD0.416
1: USD0.612
BuyNow
3000

DigiKey

Part # Manufacturer Description Price BuyNow  Qty.
DMN3110S-7
DMN3110S-7DICT-ND
Diodes Incorporated MOSFET N-CH 30V 2.5A SOT-23 30000: USD0.1575
9000: USD0.16052
6000: USD0.17287
3000: USD0.18213
1000: USD0.20374
500: USD0.25066
100: USD0.321
10: USD0.462
1: USD0.54
BuyNow
10674
DMN3110SQ-7
31-DMN3110SQ-7CT-ND
Diodes Incorporated MOSFET BVDSS: 25V~30V SOT23 T&R 75000: USD0.08137
30000: USD0.08485
9000: USD0.08613
6000: USD0.0957
3000: USD0.09984
1000: USD0.10846
500: USD0.1595
100: USD0.1723
10: USD0.287
1: USD0.37
BuyNow
3000

Avnet Americas

Part # Manufacturer Description Price BuyNow  Qty.
DMN3110S-7
DMN3110S-7
Diodes Incorporated Trans MOSFET N-CH 30V 3.3A 3-Pin SOT-23 T/R - Tape and Reel (Alt: DMN3110S-7) 300000: USD0.12003
30000: USD0.12197
24000: USD0.1239
18000: USD0.12874
12000: USD0.13262
6000: USD0.13673
3000: USD0.14181
BuyNow
0
DMN3110SQ-7
DMN3110SQ-7
Diodes Incorporated MOSFET Enhancement N-Channel 30V 3-Pin SOT-23 T/R - Tape and Reel (Alt: DMN3110SQ-7) 300000: USD0.0646
30000: USD0.06565
24000: USD0.06669
18000: USD0.06929
12000: USD0.07138
6000: USD0.07359
3000: USD0.07633
BuyNow
0

Mouser Electronics

Part # Manufacturer Description Price BuyNow  Qty.
DMN3110S-7
621-DMN3110S-7
Diodes Incorporated MOSFET MOSFET BVDSS: 25V-30 SOT23,3K 1: USD0.56
10: USD0.377
100: USD0.311
500: USD0.258
1000: USD0.193
3000: USD0.171
9000: USD0.165
BuyNow
105534
DMN3110SQ-7
621-DMN3110SQ-7
Diodes Incorporated MOSFET MOSFET BVDSS: 25V~30V SOT23 T&R 3K 1: USD0.38
10: USD0.296
100: USD0.165
1000: USD0.112
3000: USD0.098
9000: USD0.088
24000: USD0.087
45000: USD0.082
BuyNow
3000

Arrow Electronics

Part # Manufacturer Description Price BuyNow  Qty.
DMN3110S-7
V72:2272_06698249
Diodes Incorporated Trans MOSFET N-CH 30V 3.3A 3-Pin SOT-23 T/R 1000: USD0.1501
500: USD0.2203
387: USD0.2583
BuyNow
2840

RS

Part # Manufacturer Description Price BuyNow  Qty.
DMN3110S-7
70551246
Diodes Incorporated N-Channel Enhancement MOSFET SOT-23 | Diodes Inc DMN3110S-7 25: USD0.308
RFQ
0

Verical

Part # Manufacturer Description Price BuyNow  Qty.
DMN3110S-7
82099379
Zetex / Diodes Inc Trans MOSFET N-CH 30V 3.3A 3-Pin SOT-23 T/R 3000: USD0.1575
BuyNow
195000
DMN3110S-7
80570010
Zetex / Diodes Inc Trans MOSFET N-CH 30V 3.3A 3-Pin SOT-23 T/R 337: USD0.2583
BuyNow
2840

TME

Part # Manufacturer Description Price BuyNow  Qty.
DMN3110S-7
DMN3110S-7
Diodes Incorporated Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 25A; 1.8W; SOT23 500: USD0.177
100: USD0.19
30: USD0.211
10: USD0.238
3: USD0.259
RFQ
0

Avnet Asia

Part # Manufacturer Description Price BuyNow  Qty.
DMN3110S-7
DMN3110S-7
Diodes Incorporated Trans MOSFET N-CH 30V 3.3A 3-Pin SOT-23 T/R (Alt: DMN3110S-7) 150000: USD0.04262
75000: USD0.04365
30000: USD0.04473
15000: USD0.04586
9000: USD0.04645
6000: USD0.04705
3000: USD0.04767
BuyNow
0

Avnet Silica

Part # Manufacturer Description Price BuyNow  Qty.
DMN3110S-7
DMN3110S-7
Diodes Incorporated Trans MOSFET N-CH 30V 3.3A 3-Pin SOT-23 T/R (Alt: DMN3110S-7) BuyNow
183000
DMN3110SQ-7
DMN3110SQ-7
Diodes Incorporated MOSFET Enhancement N-Channel 30V 3-Pin SOT-23 T/R (Alt: DMN3110SQ-7) BuyNow
3000

New Advantage Corporation

Part # Manufacturer Description Price BuyNow  Qty.
DMN3110SQ-7
Diodes Incorporated 3000: USD0.1188
BuyNow
3000
DMN3110S-7
Diodes Incorporated 3000: USD0.0438
BuyNow
453000

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