dmn3112s n-channel enhancement mode mosfet features ? low on-resistance: 57m ? @ v gs = 10v 112m ? @ v gs = 4.5v ? low gate threshold voltage ? low input capacitance ? fast switching speed ? low input/output leakage ? lead free by design/rohs compliant (note 1) ? "green" device (note 2) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot23 ? case material: molded plasti c, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish ? matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? terminal connections: see diagram ? weight: 0.008 grams (approximate) ordering information (note 3) part number qualification case packaging DMN3112S-7 commercial sot23 3000/tape & reel dmn3112sq-7 automotive sot23 3000/tape & reel notes: 1. eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. no purposely added lead. halogen and antimony free. marking information date code key year 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017 code v w x y z a b c d e month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d sot23 top view equivalent circuit d g s top view pin configuration mn4 = product type marking code ym = date code marking y = year (ex: v = 2008) m = month (ex: 9 = september) mn4 ym source gate drain product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com
maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit drain source voltage v dss 30 v gate-source voltage v gss 20 v drain current (note 4) t a = 25c t a = 70c i d 5.8 4.2 a drain current (note 4) pulsed i dm 20 a body-diode continuous current (note 4) i s 2.0 a thermal characteristics characteristic symbol value unit total power dissipation (note 4) p d 1.4 w thermal resistance, junction to ambient @t a = 25c (note 4) r ja 90 c/w operating and storage temperature range t j, t stg -55 to +150 c electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 5) drain-source breakdown voltage bv dss 30 ? ? v v gs = 0v, i d = 250 a zero gate voltage drain current i dss ? ? 800 na v ds = 30v, v gs = 0v gate-body leakage i gss ? ? 80 800 na v gs = 20v, v ds = 0v v gs = 25v, v ds = 0v on characteristics (note 5) gate threshold voltage v gs ( th ) 1.3 1.9 2.2 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds (on) ? ? 47 92 57 112 m v gs = 10v, i d = 5.8a v gs = 4.5v, i d = 4.2a forward transconductance |y fs | ? 4.7 ? s v ds = 5v, i d = 4.2a source-drain diode forward voltage v sd ? 0.78 1.1 v v gs = 0v, i s = 2.0a dynamic characteristics input capacitance c iss ? 268 ? pf v ds = 5v, v gs = 0v f = 1.0mhz output capacitance c oss ? 73 ? pf reverse transfer capacitance c rss ? 50 ? pf notes: 2. device mounted on fr-4 pcb. t 5 sec. 3. short duration pulse test used to minimize self-heating effect. dmn3112s product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com
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